Chemical and mechanical polishing liquid and its use
A chemical machinery, polishing liquid technology, applied in other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve problems such as corrosion and defects, improve metal surface quality, inhibit pitting and corrosion , the effect of reducing the metal removal rate
Active Publication Date: 2007-01-24
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
[0005] The present invention is to solve the problems of corrosion and defects in the prior art, thereby improving the quality of the metal surface
Method used
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Embodiment 1
[0026] Chemical Mechanical Polishing Fluid 1: 5wt% silica particles, 0.1wt% benzotriazole, 0.5wt% succinic acid, 0.01wt% ammonium molybdate and others are water, pH is 4.25.
Embodiment 2
[0028] Chemical mechanical polishing solution 2: 5wt% silicon dioxide particles, 0.1wt% benzotriazole, 0.5wt% succinic acid, 0.1wt% ammonium molybdate, other water, pH 4.25.
Embodiment 3
[0030] Chemical mechanical polishing liquid 3: 5wt% silicon dioxide particles, 0.5wt% succinic acid, 0.5wt% ammonium ammonium molybdate, other water, pH 4.25.
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Abstract
The chemical and mechanical polishing fluid includes at least one kind of grinding particle and one kind of carrier, as well as at least one kind of metal corrosion inhibitor. The present invention also discloses the use of this chemical and mechanical polishing fluid in polishing metal parts. The chemical and mechanical polishing fluid of the present invention has less faults in the polished metal surface, lowered metal eliminating rate and high surface quality of polished metal parts.
Description
technical field [0001] The invention relates to a chemical mechanical polishing liquid and its application. Background technique [0002] With the development of microelectronics technology, the integration level of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires nearly a hundred processes in the microelectronics process, especially multi-layer wiring, lining The bottom and medium must be chemically mechanically globally planarized, and chemical mechanical polishing (CMP) has been proven to be the best planarization method. [0003] In chemical mechanical polishing methods, the polished surface of a substrate is brought into direct contact with a rotating polishing pad while pressure is applied to the backside of the substrate. During polishing, the polishing pad rotates with the operating table while maintaining a downward force on the back of the substrate, and a liquid comp...
Claims
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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14C25F3/16
CPCH01L21/3212C09G1/02
Inventor 荆建芬杨春晓肖正龙
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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