Chemico-mechanical polishing liquid

Abstract

The present invention discloses a chemical machinery polishing solution which contains seat grinding granule and water, and seat grinding blocker like described in Formula I, wherein X and Y alone is C or N. The polishing solution provided in the invention can reduce polycrystalline silicon removal rate without effecting silicon dioxide removal rate, and can reduce depression caused by differencebetween removal rate of polycrystalline silicon and silicon dioxide in the process of polishing obviously, hence improve plainness of wafer surface.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid in semiconductor manufacturing process. Background technique [0002] With the continuous development of semiconductor technology and the continuous increase of interconnection layers in large-scale integrated circuits, the planarization technology of conductive layers and insulating dielectric layers has become particularly critical. The chemical mechanical polishing (CMP) technology pioneered by IBM in the 1980s is considered to be the most effective method for global planarization. [0003] Chemical mechanical polishing (CMP) is composed of chemical action and mechanical action and the combination of the two actions. Its equipment usually consists of a polishing table with a polishing pad (pad), and a polishing head (carrier) for carrying a chip (wafer). Among them, the grinding head fixes the chip, and then presses the front side of the chip on the grinding pad. When chemical mechan...

AI Technical Summary

Problems solved by technology

The hydrophobic groups of the polymer are thought to be adsorbed on the polysilicon surface, forming a passivation layer that reduces the polysilicon removal rate

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