Chemico-mechanical polishing liquid

Abstract

The invention discloses a chemical-mechanical polishing solution, which is characterized by comprising an abrading agent, an oxidizer, water and the following one or more complexing agents: triazole ring containing sulfydryl, triazoles compound the active nitrogen atom of which contains donative electron substituent, pyridine ring containing carboxyl and oxalate. Cu removing rate of the polishingsolution has low sensitivity to concentration change of oxyful contained in the polishing solution. After the polishing solution is adopted for polishing, the copper has smooth surface and good surface topography.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid. Background technique [0002] In the semiconductor process below 130nm, metal copper has been widely used as an interconnection material. Chemical mechanical polishing (CMP) of Cu interconnects is a widely used technique in today's global planarization process. Different processes have different technical requirements for copper polishing rate. It is a common method in the industry to adjust the copper removal rate by optimizing the process conditions. Many literatures have reported different polishing fluid formulations to achieve different selectivity ratios to adjust the surface morphology and removal rate of Cu. [0003] In the chemical mechanical polishing process of Cu, there are two stages: fast removal stage and soft landing stage (such as figure 1 shown). Polishing in the soft landing stage requires a relatively low copper removal rate and a very high Cu / Ta polishing selecti...

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