Method for controlling roughness of silicon crystal substrate material surface

A technology of surface roughness and substrate material, which is applied in the control field of surface roughness of silicon single crystal substrate material, can solve the problem of high surface roughness of substrate sheet, and achieves improvement of uniformity and exchange rate, improvement of flatness and stability. good effect

Inactive Publication Date: 2006-11-22
HEBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned disadvantages, in order to solve the problem of high surface roughness of the substrate sheet existing in the polishing process of the existing silicon single crystal substrate material, to provide a kind of strong chemical action, low roughness, no scratches, Method for controlling surface roughness of silicon single crystal substrate material with low cost

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The first step: take SiO with a particle size of 15-100nm 2 Sol 800g, concentration is 40%, puts into 2800g deionized water while stirring, then gets 360g ethylenediaminetetraacetic acid tetrakis (tetrahydroxyethylethylenediamine) to adjust above-mentioned solution pH value to be 13.5, then adds 40gFA / O activity Add the above liquid while stirring; get 4000g of silicon single crystal substrate polishing liquid after stirring evenly, and then carry out chemical mechanical polishing for 20min. The removal rate reaches 2600nm / min.

[0031] The second step: take SiO with a particle size of 15-25nm 2 Sol 800g, concentration is 40%, puts into 2860g deionized water while stirring, then gets 280g ethylenediaminetetraacetic acid tetrakis (tetrahydroxyethylethylenediamine) and adjusts the pH value of above-mentioned solution to be 12, then adds 60gFA / O active agent, pour in the above liquid while stirring. After stirring evenly, 4000g of silicon single crystal substrate polish...

Embodiment 2

[0033] The first step: take SiO with a particle size of 15-100nm 2 Sol 3600g, concentration is 50%, put into 170g deionized water while stirring, then get 210g ethylenediaminetetraacetic acid tetrakis (tetrahydroxyethylethylenediamine) to adjust above-mentioned solution and make pH value be 10.5, add 20gFA / O The active agent is poured into the above liquid while stirring. After stirring evenly, 4000g of silicon single crystal substrate polishing solution was obtained, and then chemical mechanical polishing was carried out for 20min. The process conditions were: flow rate 100ml / min, temperature 30°C, speed 40rpm, pressure 0.10MPa, and the achieved removal rate was 1800nm / min.

[0034] The second step: take SiO with a particle size of 15-25nm 2 Sol 3600g, concentration is 50%, puts into 1200g deionized water while stirring, then gets 160g ethylenediaminetetraacetic acid tetrakis (tetrahydroxyethylethylenediamine) and adjusts above-mentioned solution and makes pH value be 9, the...

Embodiment 3

[0036] The first step: take SiO with a particle size of 15-100nm 2 Sol 900g, concentration is 30%, put into 2700g deionized water while stirring, then take 360g ethylenediaminetetraacetic acid tetrakis (tetrahydroxyethylethylenediamine) to adjust the above solution so that the pH value is 12.5, then optionally add 40g FA / O surfactant, O II -7((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 7 -H), O II -10((C 10 h 21 -C 6 h 4 -O-CH 2 CH 2 O) 10 -H), O-20(C 12-18 h 25-37 -C 6 h 4 -O-CH 2 CH 2 O) 70 -H), one or more than one of JFC, pour into the above-mentioned liquid while stirring; get 4000g silicon single crystal substrate polishing liquid after stirring evenly, then carry out chemical mechanical polishing 10min, process condition is: flow rate 100ml / min, The temperature is 35°C, the rotation speed is 60rpm, the pressure is 0.10MPa, and the removal rate reaches 2000nm / min.

[0037] The second step: take SiO with a particle size of 15-25nm 2 Sol 900g, concentratio...

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Abstract

The invention relates to a method for controlling the surface roughness of silicon single-crystal liner material. According to the chemical property of silicon single-crystal liner material, the invention selects alkali medium; uses SiO2 hydrosol as abrasive; uses pH adjuster to adjust the pH value of solution 9-13.5; adds surface activator as FA/O to prepare the polish liquid. The invention uses two polishing steps as roughly polishing and finely polishing at different polishing conditions; roughly polishes for 10-20mins while the flux is 100-200ml/min, the temperature is 30-40Deg. C, the rotation speed is 40-120rpm and the pressure is 0.10-0.20MPa; finely polishing for 4-7mins while the flux is 800-1000ml/min, the temperature is 20-30Deg. C, the rotation speed is 30-60rpm, and the pressure is 0.05-0.10MPa. The invention can realize low roughness of single-crystal liner material.

Description

technical field [0001] The invention relates to a chemical mechanical polishing method, in particular to a method for controlling the surface roughness of a silicon single crystal substrate material. Background technique [0002] At present, silicon single crystal is the main substrate material of IC. As the integration level of IC continues to increase, the feature size continues to decrease, and the requirement for the perfection of the silicon wafer surface is getting higher and higher. Because the particles and metal impurities on the surface of the polished sheet will seriously affect the breakdown characteristics, interface state and minority carrier life, especially for the surface effect type MOS large-scale integrated circuits, so the smoothness of the surface of the polished sheet, Defects, roughness, metal contamination and particles have extremely stringent requirements and controls. For example, in the production of DRAM devices with a line width of 64M and 0.3...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/02C09G1/02C09G1/04H01L21/304
Inventor 刘玉岭檀柏梅
Owner HEBEI UNIV OF TECH
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