Polishing solution for sapphire substrate

Abstract

The invention discloses a polishing solution for a sapphire substrate, and relates to the technical field of preparation of polishing materials. The polishing solution is prepared from the following active ingredients in percentage by weight: 90-95% of silica sol, 0.05-2% of polishing accelerator, 0.05-3% of complexing agent, 0.05-3% of pH regulator, and the balance of deionized water. The polishing solution has the characteristics of being high in removal rate, good in polishing effect, easy to clean, low in cost and the like, and is applicable to the polishing of sapphire substrate materials.

Description

Technical field: [0001] The invention relates to the technical field of preparation of polishing materials, in particular to a polishing liquid for sapphire substrates. Background technique: [0002] The main component of sapphire single crystal (Sapphire) is α-Al 2 o 3 , is a general term for corundum gemstones of other colors except ruby ​​in corundum gemstones, also known as white gemstones. With a Mohs hardness of 9, it is second only to diamond with a Mohs hardness of 10. Sapphire is still highly stable at high temperatures, with a melting point of 2030 °C. Sapphire has excellent dielectric properties, electrical properties, excellent optical transparency and mechanical properties, and is resistant to chemical corrosion and radiation. It can be used as infrared and microwave window systems, light-emitting diodes (LEDs), laser diodes (LDs), Parts manufacturing materials in high-tech fields such as light transmission windows for ultraviolet to near-infrared light, pre...

AI Technical Summary

Problems solved by technology

For example, the Chinese patent (application number 03141638.1) "Optical Sapphire Crystal Substrate Grinding Process" mainly includes rough grinding, fine grinding and polishing. Although it can effectively reduce the surface roughness of sapphire, the diamond abrasive used in it is During the polishing process, it is easy to damage the surface layer of the material, causing deep scratches and the dispersion stability of the polishing liquid is poor

Polishing sapphire with silica sol can achieve a very low surface roughness Ra<0.5 nm, but the polishing rate is too slow; such as the Chinese patent (application number 201010215841.6) "slightly alkaline sapphire polishing solution and its preparation method", the invention is Suspend nano-silica sol particles with a particle size of 3-300nm in water first, then add a complexing agent into the suspension, then add a surfactant, and finally adjust the pH value of the suspension to 7-9.5; the inventive method Simple, reasonable, easy to produce, and good product stability; the product can be diluted in a high proportion, the product has high polishing efficiency, strong stability, and is not easy to deposit on the polishing machine and the surface of the polished product. Its unique fluid properties are not suitable for sapphire after polishing. The surface is air-dried, which greatly reduces the burden of the subsequent cleaning process; however, the polishing efficiency of the polishing slurry is still not good

There is also a Chinese patent (application number 200610013968.3) "Control method for high removal rate of sapphire substrate", which discloses the method of using SiO with a particle size of 15-40nm 2 Abrasives, polishing fluid with a pH value of 11-13.5, under the polishing process conditions of 40-60°C temperature, 40-120rpm speed, 0.10-0.20MPa, 100-5000ml / min flow rate, the sapphire substrate material is processed on a polishing machine. Polishing for 0.2 to 3 hours; this method can achieve high-speed mass transfer under strong chemical action, thereby achieving high removal rate of polishing; Corrosion pits formed on the surface