Copper chemical and mechanical polishing combination

A polishing composition and chemical-mechanical technology, applied to polishing compositions containing abrasives, etc., can solve problems such as micro-scratches, particle residues, and reduce removal rates, and achieve low cost, reduced surface residues, and cheap prices

Inactive Publication Date: 2012-01-25
SHENZHEN LEAGUER MATERIAL +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Applying the copper polishing liquid in the previous patents, after simple cleaning after polishing, there will still be a large number of particles remaining on the surface. Although most of the residues will be eliminated by cleaning with cleaning agents, corrosion defects will be formed on the surface at the same time; in addition, copper polishing liquid patents generally Both use benzotriazole as a corrosion inhibitor. Although benzotriazole can form a dense protective film on the copper surface due to strong adsorption to inhibit the formation of corrosion defects, it will also rapidly reduce the removal rate and cause micro scratches due to excessive deposition. damage

Method used

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  • Copper chemical and mechanical polishing combination
  • Copper chemical and mechanical polishing combination
  • Copper chemical and mechanical polishing combination

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] Preparation of 700g polishing liquid: get 7g glycine, add deionized water under stirring, add 0.07g ammonium dodecylbenzotriazole sulfonate and 1.4g sodium fluoride simultaneously and stir until clarification, then add 14g silica sol (two The silicon oxide content is 30wt%, and the average particle size is 50nm) and 14g of urea hydrogen peroxide are stirred until uniform, the weight is determined to 700g with deionized water, and the pH value of the polishing solution is adjusted to 3.8 with phosphoric acid. Using the IC1000-XY / SUBA IV20 composite polishing pad of Rodel Company, through the CETR CP4 polishing tester, the polishing test was carried out under the conditions of polishing pressure 0.5psi, polishing relative motion speed 1m / s, and polishing liquid flow rate 70mL / min. By measuring the quality change of the wafer before and after polishing, and then considering the density and area of ​​the wafer, the polishing rate of the embodiment is obtained, and the copper...

Embodiment 2

[0043] Preparation of 700g polishing liquid: get 7g serine, add deionized water under stirring, add 0.07g sodium dodecylbenzotriazole sulfonate and 1.4g potassium citrate simultaneously and stir until clarification, then add 14g silica sol (dioxide The silicon content is 30wt%, and the average particle diameter is 50nm) and 14g of urea hydrogen peroxide are stirred until uniform, the weight is determined to 700g with deionized water, and the pH value of the polishing solution is adjusted to 3.8 with phosphoric acid. Using the IC1000-XY / SUBA IV20 composite polishing pad of Rodel Company, through the CETR CP4 polishing tester, the polishing test was carried out under the conditions of polishing pressure 0.5psi, polishing relative motion speed 1m / s, and polishing liquid flow rate 70mL / min. By measuring the quality change of the wafer before and after polishing, and then considering the density and area of ​​the wafer, the polishing rate of the embodiment is obtained, and the coppe...

Embodiment 3

[0045] Preparation of 700g polishing liquid: get 7g glutamic acid, add deionized water under stirring, add 0.28g fatty alcohol polyoxyethylene ether sodium sulfate and 1.4g sodium hydrogen phosphate simultaneously and stir until clarification, then add 14g silica sol (silicon dioxide Content 30wt%, average particle size is 50nm) and 14g of peracetic acid are stirred until uniform, weighed to 700g with deionized water, and the pH value of the polishing solution is adjusted to 3.8 with phosphoric acid. Using the IC1000-XY / SUBA IV20 composite polishing pad of Rodel Company, through the CETR CP4 polishing tester, the polishing test was carried out under the conditions of polishing pressure 0.5psi, polishing relative motion speed 1m / s, and polishing liquid flow rate 70mL / min. By measuring the quality change of the wafer before and after polishing, and then considering the density and area of ​​the wafer, the polishing rate of the embodiment is obtained, and the copper surface roughn...

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Abstract

The invention discloses a copper chemical and mechanical polishing combination, which belongs to the technical field of microelectronic auxiliary materials and ultra-precision machining processes. The copper chemical and mechanical polishing combination comprises abrasive particles, an oxidant, a complexing agent, a polishing accelerating agent and a pH regulator. The copper chemical and mechanical polishing combination is characterized by further comprising a long chain corrosion inhibitor and a surface active agent. By using the polishing combination provided by the invention, surface residues, particularly surface granular residues, can be obviously decreased; surface corrosion defects can be obviously decreased; a higher removal speed rate is obtained; and the polishing combination provided by the invention further has the advantages of simple process, cheap price, low cost and the like.

Description

technical field [0001] The invention belongs to the technical field of microelectronic auxiliary materials and ultra-precision processing technology, and in particular relates to a copper chemical mechanical polishing composition. Background technique [0002] Chemical mechanical polishing is currently the only planarization technology to solve the planarization of integrated circuit wiring. At present, a number of related patent technologies have been published at home and abroad, such as 200610014301.5, 201010543029.6, US2005 / 0074976A1, WO2009 / 048203A1 and US2009 / 0215266A1. With the continuous development of microelectronics technology, integrated circuits are developing towards high integration and miniaturization of feature sizes. In order to minimize the serious interconnection delay caused by the continuous reduction of feature size, in the integrated circuit manufacturing process, it has gradually tended to use dielectric materials with lower dielectric constant and l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C23F3/04
Inventor 顾忠华龚桦王宁潘国顺
Owner SHENZHEN LEAGUER MATERIAL
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