Polishing fluid for smoothing treatment of refined surface and use method thereof

A technology for smoothing and fine surface treatment, applied in the field of polishing liquid, it can solve the problems of small original particle size, irregular shape, depression, etc., and achieve the effect of improving the removal rate and excellent surface smoothing effect.

Active Publication Date: 2007-11-28
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because the silicon-aluminum mixed oxide is in powder form, the silicon-aluminum mixed oxide powder needs to be dispersed in the water medium by heating under high pressure, and requires high energy and special dispersion equipment, and the original particle size is small. In the dispersion liquid, it is mainly distributed in the form of aggregation, and its shape is irregular and has sharp corners. The Al-doped silica particles in this aggregation state are easy to form defects such as scratches and depressions on the surface of the polishing material.

Method used

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  • Polishing fluid for smoothing treatment of refined surface and use method thereof
  • Polishing fluid for smoothing treatment of refined surface and use method thereof
  • Polishing fluid for smoothing treatment of refined surface and use method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1 Various abrasives to the comparison of BD material removal rate

[0037] Comparative polishing liquid A: Al 2 o 3 Abrasive (particle size 100nm, specific surface area 50m 2 / g) 6wt%, water 94wt%, pH=3.0;

[0038] Comparative Polishing Fluid B: Coated with Al 2 o 3 SiO 2 (Al-coated silica) abrasive (particle size 15nm, specific surface area 190m 2 / g, Al 2 o 3 accounted for SiO 2 10% of) 6wt%, water 94wt%, pH=3.0;

[0039] Comparative Polishing Fluid C: SiO 2 (Silica 1) abrasive (particle size 70nm, specific surface area 75m 2 / g) 6wt%, water 94wt%, pH=3.0;

[0040] Comparative polishing liquid D: SiO 2 (Silica 2) abrasive (particle size 30nm, specific surface area 100m 2 / g) 6wt%, water 94wt%, pH=3.0;

[0041] Polishing liquid 1: Colloidal Al-doped silica (particle size: 50nm, specific surface area: 85m 2 / g, aluminum accounted for SiO 2 2wt%) 6wt%, water 94wt%, pH=3.0.

[0042] The comparative polishing solutions A to D and polishing solu...

Embodiment 2

[0044] Example 2 The comparison of sol-type aluminum-doped silica abrasives to the removal rate of BD materials at different pH

[0045] Polishing solution E: sol-type aluminum-doped silica abrasive (particle size 50nm, aluminum accounted for SiO 2 2wt%) 5wt%, the balance is water, pH is regulated by acid and alkali etc.; Its polishing process parameter is: downward pressure 2psi, polishing desktop rotation speed 70rpm, Politex pad, Logitech PM5 Polisher.

[0046] Polishing fluid F: sol-type aluminum-doped silica abrasive (particle size 50nm, aluminum accounted for SiO 2 2wt%) 10wt%, the balance is water, the pH is adjusted by acid and alkali etc.; its polishing process parameters are: downward pressure 2psi, polishing table rotation speed 70rpm, IC1010 pad, Logitech PM5 Polisher.

[0047] Result: the removal rate of each abrasive in the polishing liquid E to the BD material is shown in Figure 2, as can be seen from Figure 2, on the soft polishing pad (for example, Politex pa...

Embodiment 3

[0048] Embodiment 3 The comparison of the concentration of sol-type aluminum-doped silica abrasive to the removal rate of BD material

[0049] Polishing liquid 2: sol-type aluminum-doped silica abrasive (particle size 30nm, specific surface area 100m 2 / g, aluminum accounted for SiO 2 2wt%) 2.5wt%, water 97.5wt%, pH=3.0;

[0050] Polishing liquid 3: sol-type aluminum-doped silica abrasive (particle size 30nm, specific surface area 100m 2 / g, aluminum accounted for SiO 2 2wt%) 5wt%, water 95wt%, pH=3.0;

[0051] Polishing liquid 4: sol-type aluminum-doped silica abrasive (particle size 30nm, specific surface area 100m 2 / g, aluminum accounted for SiO 2 2wt%) 7.5wt%, water 92.5wt%, pH=3.0;

[0052] Polishing liquid 5: sol-type aluminum-doped silica abrasive (particle size 30nm, specific surface area 100m 2 / g, aluminum accounted for SiO 2 2wt%) 10wt%, water 90wt%, pH=3.0;

[0053] Polishing liquid 6: sol-type aluminum-doped silica abrasive (particle size 30nm, specific ...

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Abstract

The present invention discloses one kind of polishing fluid for fine surfacing and its usage. The polishing fluid includes abradant and water, and the abradant is water dispersed sol type aluminum mixing silica abradant. When the polishing fluid is used in chemomechanical polishing, the downward pressure is 0.5-3 psi. The polishing fluid may be used to eliminate Ta, TaN, TEOS, FSG, BD and other low dielectric constant material effectively, and has especially high low dielectric constant material eliminating efficiency.

Description

technical field [0001] The invention relates to a polishing liquid for fine surface smoothing treatment and its application method. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical global planarization, and chemical mechanical polishing (CMP) has been proven to be the best planarization method. [0003] In a typical chemical mechanical polishing method, the surface of the substrate to be polished is brought into direct contact with a rotating polishing pad while pressure is applied to the backside of the substrate. During polishing, the polishing pad rotates with the operating table while maintaining downward pressure on the back of the sub...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
CPCC09G1/02H01L21/31053H01L21/3212C09K3/1463C23F3/06
Inventor 陈国栋王淑敏俞昌宋伟红顾元
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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