Chemo-mechanical polishing slurry for metal, and its application

Abstract

The invention provides a chemo-mechanical polishing slurry for copper, and its application. The slurry comprises abrasive particles, a complexing agent, an oxidant, a corrosion inhibitor, and at least one organic phosphate surfactant. The slurry has the advantages of maintenance of a high copper removal rate, improvement of the saucerization and the over polishing window of polished core wires, few pollutants the surface of polished copper, and no corrosion.

Description

technical field [0001] The invention relates to a chemical mechanical polishing slurry and its application, in particular to a chemical mechanical polishing slurry for copper and its application. Background technique [0002] With the development of semiconductor technology and the miniaturization of electronic components, an integrated circuit contains millions of transistors. In the process of operation, after integrating such a large number of transistors that can switch quickly, the traditional aluminum or aluminum alloy interconnection wires reduce the speed of signal transmission, and consume a lot of energy in the process of current transmission. In a certain sense, It also hinders the development of semiconductor technology. For further development, people began to look for materials with higher electrical properties to replace the use of aluminum. As we all know, copper has low resistance and good conductivity, which speeds up the transmission speed of signals bet...

AI Technical Summary

Problems solved by technology

The above-mentioned patent overcomes the problems encountered in the polishing process of the above-mentioned copper to a certain extent, but the effect is not obvious. After use, there are defects on the copper surface, the flatness is low, and the copper wire has dish-shaped depressions after polishing. The overpolishing window is narrow; or the polishing rate is not high enough to be applied to processes that require high removal rates

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