CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for alkaline sapphire substrate and preparation method thereof

A sapphire substrate and polishing liquid technology, applied in the field of polishing liquid, can solve the problems of low CMP removal rate, influence on LED production, unstable surface quality, etc., and achieve the effect of improving polishing removal rate, improving surface quality, and low-damage polishing

Active Publication Date: 2014-02-12
江西伟嘉创展企业管理有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The purpose of the present invention is to solve the problem of low removal rate of existing CMP, long period, unstable surface quality, low production efficiency, high processing cost, large substrate warpage after CMP, which affects the later LED production, and sapphire substrate after CMP. Serious defects of edge chipping provide a mixed abrasive alkaline sapphire substrate material CMP polishing fluid that improves the removal rate and improves the surface quality

Method used

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  • CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for alkaline sapphire substrate and preparation method thereof
  • CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for alkaline sapphire substrate and preparation method thereof

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Embodiment 1

[0037] A kind of preparation method of mixed abrasive alkaline sapphire substrate material CMP polishing liquid, described preparation method comprises the following steps:

[0038] a) Take nano-SiO with a particle size of 20nm 2 Sol 931ml, put it into 2000ml deionized water while stirring at room temperature, prepare nano-silica sol suspension, and then take the particle size as 20nmA1 2 o 3 Auxiliary abrasive 60ml, fully stir clockwise while adding, time is 15 minutes, make SiO 2 Sol suspension with A1 2 o 3 The aqueous suspension is fully mixed to form a sapphire polishing liquid with mixed abrasives. The polishing liquid is suspended and has the same particle size;

[0039] b) Then add 3ml of FA / O type I non-ionic surfactant and 6ml of FA / OII type chelating agent in the suspension, stir well while adding, and finally add hydroxyethylethylenediamine to adjust the pH value of the suspension to 12 to obtain a polishing solution; wherein, nano-SiO 2 The mass fraction of ...

Embodiment 2

[0043] A kind of preparation method of mixed abrasive alkaline sapphire substrate material CMP polishing liquid, described preparation method comprises the following steps:

[0044] a) Take nano-SiO with a particle size of 30nm 2 Sol 311ml, put it into 2650ml deionized water while stirring at room temperature, prepare nano-silica sol suspension, and then take the particle size as 30nmA1 2 o 3 Auxiliary abrasive 30ml, fully stir clockwise while adding, time is 20 minutes, make SiO 2 Sol suspension with A1 2 o 3 The aqueous suspension is fully mixed to form a sapphire polishing liquid with mixed abrasives. The polishing liquid is suspended and has the same particle size;

[0045] b) Then add 3ml of FA / O type I non-ionic surfactant and 6ml of FA / OII type chelating agent in the suspension, stir well while adding, and finally add hydroxyethylethylenediamine to adjust the pH value of the suspension to 10 to obtain a polishing solution; wherein, nano-SiO 2 The mass fraction ...

Embodiment 3

[0049] A kind of preparation method of mixed abrasive alkaline sapphire substrate material CMP polishing liquid, described preparation method comprises the following steps:

[0050] a) Take nano-SiO with a particle size of 40nm 2 Sol 465ml, put it into 2500ml deionized water while stirring at room temperature, prepare nano-silica sol suspension, and then take the particle size as 40nmA1 2 o 3 Auxiliary abrasive 30ml, fully stir clockwise while adding, time is 25 minutes, make SiO 2 Sol suspension with A1 2 o 3 The aqueous suspension is fully mixed to form a sapphire polishing liquid with mixed abrasives. The polishing liquid is suspended and has the same particle size;

[0051] b) Then add 2ml of FA / O type I non-ionic surfactant and 3ml of FA / OII type chelating agent in the suspension, stir well while adding, and finally add hydroxyethylethylenediamine to adjust the pH value of the suspension to 13 to obtain a polishing solution; wherein, nano-SiO 2 The mass fraction...

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Abstract

The invention relates to a CMP (Chemical-Mechanical Polishing) polishing liquid with mixed grinding materials for an alkaline sapphire substrate and a preparation method thereof. The CMP polishing liquid consists of the following components in percentage by weight: 0.5-35% of a main grinding material, 0.015-0.09% of an auxiliary grinding material, 0.005-0.05% of a chelating agent, 0.005-0.05% of a surfactant, 0.01-0.5% of a pH adjustor, and the balance of deionized water, wherein the main grinding material is a nano SiO2 sol and the auxiliary grinding material is an Al2O3 sol. The auxiliary grinding material, the chelating agent, the surfactant and the alkaline pH adjustor are sequentially added into a nanosilicon sol suspension. In the polishing liquid, as the content of the main grinding material SiO2 sol is reduced, the phenomenon that the polishing liquid residue on the surface of the substrate after CMP is relatively severe is reduced to facilitate subsequent cleaning. A less amount of the auxiliary grinding material Al2O3 is added, so that the polishing speed is remarkably increased, and the roughness of the substrate after CMP is reduced.

Description

technical field [0001] The invention relates to a polishing liquid, in particular to a CMP polishing liquid for a mixed abrasive alkaline sapphire substrate material with improved removal rate and improved surface quality and a preparation method thereof. [0002] Background technique [0003] Sapphire single crystal (Sapphire), also known as white gem, the molecular formula is Al 2 o 3 , transparent, has the same optical and mechanical properties as natural gemstones, has good thermal properties, excellent electrical and dielectric properties, and chemical corrosion resistance, high infrared transmittance, and good wear resistance The hardness is second only to diamond, with a Ta Mok's grade of 9, and it still has good stability at high temperatures, with a melting point of 2030°C, so it is widely used in industry, national defense, scientific research and other fields, and is increasingly used as Manufacturing materials for parts in high-tech fields such as solid-st...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 郑伟艳曾锡强
Owner 江西伟嘉创展企业管理有限公司
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