Polishing solution for precision polishing of LED sapphire substrate

A precision polishing and polishing liquid technology, applied in the field of polishing liquid, can solve the problems of heavy scratches on the surface of the wafer, high processing cost, and large roughness of the polishing surface, etc., and achieve high removal rate, consistent removal rate, and good fluidity

Inactive Publication Date: 2013-07-03
铜陵市琨鹏光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] (1) The roughness of the polished surface is relatively large (Ra≥5nm);
[0005] (2) There are serious scratches on the surface of the wafer, and about 20% of the wafer surface has rough and deep marks, which need to be re-polished
Part of the reworked sapphire sheet is

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0052] Implementation example results:

[0053] example Silica sol concentration Viscosity at room temperature removal rate Surface roughness Example 1 10~20wt% 0.75~0.85mm2 / s 12.6nm / min Ra: 4.73nm Example 2 20~35wt% 0.85~1.0mm2 / s 15.8nm / min Ra: 1.66nm

[0054] Example results 20~30wt% silica sol abrasive, the removal rate is high, and the surface quality is relatively good.

[0055] Conclusion: The sol abrasive with a particle size of 50-70nm and a content of 20-30wt% is more suitable as the abrasive for the sapphire polishing solution of the present invention. Its viscosity at room temperature is 0.80-1.1 mm2 / s which is close to the required value, and its fluidity is good.

[0056] 2. Example of adjusting the pH value of the polishing solution

[0057] First dissolve the selected three organic bases in a certain amount of deionized water, stir well, then slowly add silica sol and stir well, add each test solution to the speci...

example 13

[0082] The organic base diethanolamine is a silica sol with a content of 0.7-1.0 wt%, a particle size of 50-70nm and a content of 25-35 wt%, the content of ethylenediamine as a dispersant is 0.4-0.7 wt%, and the content of nonylphenol polyoxyethylene ether as an active agent is 0.1 ~0.3 wt%. Through verification experiments, it is found that the final removal rate of polishing fluid can reach about 28nm / min, the surface roughness Ra is less than 0.5nm, and other main performance indicators can also meet the requirements.

[0083] Compared with imported polishing fluid performance:

[0084] Metrics and Performance import self-provided PH value 9～10 9～12 viscosity 0.6~1.0mm2 / s 0.80~1.1mm2 / s Dispersant - Ethylenediamine active agent - Nonylphenol polyoxyethylene Abrasive content (wt%) 20～25 30～60 Removal rate >17nm / min >28nm / min Surface roughness 0.1~0.3nm Flatness

[0085] It can be see...

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PUM

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Abstract

The invention relates to a preparation formula of a polishing solution for precision polishing of an LED sapphire substrate. The polishing solution comprises the following components in percentage by weight: 0.7-1.0% of organic base diethanol amine, 25-35% of silica solution with grain diameter of 50-70nm, 0.4-0.7% of dispersing agent ethanediamine, and 0.1-0.3% of activating agent nonylphenol polyoxyethylene ether. The removal rate of the polishing solution can be up to 28 nm/min; the surface roughness Ra is smaller than 0.5 nm, which can meet the main performance index requirements for sapphire substrate CMP (chemical mechanical polishing). The polishing solution has the advantages of high removal rate, low surface roughness and cost, non-pollution to the environment and non-corrosion to equipment.

Description

technical field [0001] The invention relates to a polishing liquid used for precision polishing of sapphire substrates for LEDs. Background technique [0002] The application of semiconductor material GaN has brought LED to a new level. Because GaN is difficult to prepare bulk materials, thin films must be grown on other substrate materials, because the single crystal sapphire substrate and GaN lattice can match and the single crystal sapphire substrate Its light transmission is good in the visible light range, so sapphire is the most important substrate material. At present, high-quality GaN materials can be epitaxially grown on sapphire, and high-brightness LEDs have been developed. [0003] As a substrate, sapphire has very high requirements for its processing quality. The sapphire substrate as the substrate requires an ultra-smooth, non-damaged surface after metal organic chemical vapor deposition (MOVCD). The current level of domestic sapphire substrates generally has...

Claims

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Application Information

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IPC IPC(8): C09G1/02
Inventor 张学炎
Owner 铜陵市琨鹏光电科技有限公司
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