Chemical mechanical polishing solution

A chemical mechanical and polishing liquid technology, which is applied in the fields of polishing compositions containing abrasives, electrical components, semiconductor/solid-state devices, etc., can solve the problem that the polishing rate and planarization efficiency of dielectric materials cannot be taken into account at the same time, and achieve flatness The effects of high chemical efficiency, high polishing rate, and simplified steps

Pending Publication Date: 2021-06-22
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problem that the chemical mechanical polishing fluid in the prior art cannot simultaneously ba

Method used

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Examples

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Example Embodiment

[0021] Example 1

[0022] In this embodiment, the reference example is a 1 wt% sol type of cerium oxide, other embodiments and comparative examples, add or reduce a certain amount of compound and cerium oxide on the basis of the reference case (see Table 1), and with ammonia (NH4OH) ) Or nitric acid (HNO3) regulates pH to 4.5, and the mass percentage of water is used to 100%.

[0023] Polishing method: TEOS (silica) blank wafer (hereinafter referred to as "TEOS blank") is carried out using the Mirra polishing machine (hereinafter referred to as "TEOS blank"), corresponding polishing conditions include: IC1010 polishing pad, polishing disk (Platten) and polished head (Carrier) It is 93 rpm and 87 rpm, and the pressure is 3 psi, the polishing liquid flow rate is 150 ml / min, and the polishing time is 60 seconds. The TEOS film thickness was measured with a Nanospec non-metallic film thick measuring instrument (Nanospec6100-300). Starting with 3 mm from the edge of the wafer, 49 poin...

Example Embodiment

[0029] Example 2

[0030] In this embodiment, the reference example is a 0.3 wt% sol type cerium oxide, other embodiments and comparative examples, add a certain amount of compound or cerium oxide (see Table 2) on the basis of the reference example, and water (NH) 4 OH) or nitric acid (HNO 3 ) Adjust pH to 4.5, with water supply quality to 100%.

[0031] Polishing method: Polishing uses the Mirra polishing machine to polishing TEOS blank and pattern wafer (Patterned Wafer), corresponding polishing conditions include: IC1010 polishing pad, polishing disk (Platten) and polished head (Carrier) rotation 93RPM and 87RPM , Pressure is 3 psi, and the polishing liquid flow rate is 150 ml / min. The TEOS film thickness is measured with the Nanospec film thickness measurement system (Nanospec6100-300, Shanghai Nanospec Technology Corporation). Starting with 3 mm from the edge of the wafer, 49 points are measured at the same distance. The polishing rate is an average of 49 points. The step h...

Example Embodiment

[0039] Example 3

[0040] In the present embodiment, the reference example is an additional content of the content of the compound and the change of sol-type cerium oxide (see Table 2) on the basis of the reference case (see Table 2), and ammonia water (see Table 2), NH 4 OH) or nitric acid (HNO 3 ) Adjust pH to 4.5, with water supply quality to 100%.

[0041] Polishing method: Polishing uses the Mirra polishing machine to polishing TEOS blank and pattern wafer (Patterned Wafer), corresponding polishing conditions include: IC1010 polishing pad, polishing disk (Platten) and polished head (Carrier) rotation 93RPM and 87RPM , Pressure is 3 psi, and the polishing liquid flow rate is 150 ml / min. The TEOS film thickness is measured with the Nanospec film thickness measurement system (Nanospec6100-300, Shanghai Nanospec Technology Corporation). Starting with 3 mm from the edge of the wafer, 49 points are measured at the same distance. The polishing rate is an average of 49 points. The ...

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Abstract

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises water, cerium oxide grinding particles and hydroxylamine. 4-hydroxybenzoic acid or salicylhydroxamic acid can be further added into the chemical mechanical polishing solution, so that the removal rate of the patterned silicon dioxide sheet can be increased.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid. Background technique [0002] At present, chemical mechanical polishing (CMP) has become the most effective and mature planarization technology in the manufacturing process of micro-nano devices. In the manufacturing process of micro-nano devices, Interlayer Dielectric-ILD (Interlayer Dielectric-ILD) technology has become the mainstream isolation technology due to its outstanding isolation performance, flat surface morphology and good locking performance. The role of chemical mechanical polishing in the formation of ILD structures is to flatten the oxide layer with steps, and its main polishing performance parameters are polishing rate and planarization efficiency. It is generally more effective to use cerium oxide as polishing particles to increase the polishing rate of dielectric materials, but high polishing rates often...

Claims

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Application Information

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IPC IPC(8): C09G1/02
CPCC09G1/02H01L21/3105H01L21/321C09K3/1409C09K3/1463
Inventor 李守田任晓明贾长征
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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