Chemically mechanical polishing slurry

Abstract

The invention discloses new chemically mechanical polishing slurry for polishing metals. The polishing slurry is prepared by combining the following substances: abrasive particles, complexing agents and corrosion inhibitors. The slurry has the following positive effects: the removal rate of metals can be reduced, the metal materials can be prevented from whole and local corrosion, the defects can be obviously decreased and the surface quality can be improved.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid. Background technique [0002] With the development of microelectronics technology, the integration level of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires nearly a hundred processes in the microelectronics process, especially multi-layer wiring, lining The bottom and medium must be chemically mechanically globally planarized, and chemical mechanical polishing (CMP) has been proven to be the best planarization method. [0003] In chemical mechanical polishing methods, the polished surface of a substrate is brought into direct contact with a rotating polishing pad while pressure is applied to the backside of the substrate. During polishing, the polishing pad rotates with the operating table while maintaining a downward force on the back of the substrate, and a liquid composed of abrasives and...

AI Technical Summary

Problems solved by technology

[0004] In typical chemical mechanical polishing of metals, defect levels are often high, especially if pitting, edge erosion, corrosion, etc. are present

Moreover, the polishing rate is also high, and the damage to the metal surface is relatively large, and problems such as scratches and rough surfaces are prone to occur.

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