Chemico-mechanical polishing liquid for copper process

A chemical-mechanical and polishing liquid technology, which is applied in polishing compositions containing abrasives, polishing compositions, chemical instruments and methods, etc., can solve the problems that cannot meet the requirements of polishing rate and selection ratio of copper process, wafer surface defects, Contamination residues and other problems, to reduce the substrate surface contamination, sticky contamination and other residues, prevent local and overall corrosion

Active Publication Date: 2009-06-17
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to overcome the defect that the existing chemical mechanical polishing liquid used for copper process is easy to cause wafer surface defects, pollution residue and corrosion, and cannot meet the requirements of copper process for polishing rate and selectivity ratio, And provide a kind of chemical-mechanical polishing fluid that can solve the above-mentioned problem and be used for copper process

Method used

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  • Chemico-mechanical polishing liquid for copper process
  • Chemico-mechanical polishing liquid for copper process
  • Chemico-mechanical polishing liquid for copper process

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Experimental program
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Embodiment 1～9

[0022] Table 1 has provided polishing liquid 1~9 of the present invention, with formula in the table, each composition is mixed, and deionized water is surplus, finally with pH adjusting agent (20%KOH or dilute HNO 3 , select according to the needs of the pH value) to adjust to the required pH value, continue to stir until a uniform fluid, and stand still for 30 minutes to obtain various chemical mechanical polishing fluids.

[0023] Table 1 Polishing liquid 1~9 formula of the present invention

[0024]

[0025]

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Abstract

The present invention discloses a chemical machinery polishing solution used in copper plating, which contains seat grinding granule, organanic phosphonic acid compounds, azole nitrogen compounds, oxidizer and carrier. The polishing solution provided in the invention can guaranty polishing rate of speed with little seat grinding granule dosage, and deduce defect, cullet cut, sticky dirt and otherresidue obviously at the same time, hence reduce infectant on substrate surface; appropriate copper /tantalum remove rate selection ratio is provided to satisfy copper plating polishing requirement; can prevent local and whole corrosion that generated in metal polishing process and improve product yield rate.

Description

technical field [0001] The invention relates to a chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid used in a copper manufacturing process. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. The material of VLSI wiring is changing from traditional Al to Cu. Compared with Al, Cu wiring has the advantages of low resistivity, high electromigration resistance, and short RC delay time, which can reduce the number of layers by half, reduce the cost by 30%, and shorten the processing time by 40%. The advantages of Cu wiring have attracted worldwide attention. [0003] However, there is cur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09G1/18H01L21/321
Inventor 徐春
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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