Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Polishing agent for synthetic quartz glass substrates, method for producing same, and method for polishing synthetic quartz glass substrate

A technology for glass substrates and synthetic quartz, which is applied to polishing compositions containing abrasives, grinding/polishing equipment, chemical instruments and methods, and can solve problems such as easy sedimentation of particles, scratches on quartz glass substrates, and poor dispersion stability , to achieve the effect of improving productivity and yield, and suppressing defects

Active Publication Date: 2020-11-27
SHIN ETSU CHEM IND CO LTD
View PDF10 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, a common ceria-based polishing agent uses dry ceria particles, which have an amorphous crystal form, and when applied to a polishing agent, compared with spherical colloidal silica, there is The technical problem that it is easy to produce scratches and other defects on the surface of the quartz glass substrate
In addition, compared with colloidal silica, ceria-based polishing agents also have the technical problems of poor dispersion stability and easy sedimentation of particles

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polishing agent for synthetic quartz glass substrates, method for producing same, and method for polishing synthetic quartz glass substrate
  • Polishing agent for synthetic quartz glass substrates, method for producing same, and method for polishing synthetic quartz glass substrate

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0049] As a preparation method of polishing particles, first, a cerium solution is prepared by mixing cerium nitrate as a precursor as a rare earth salt with ultrapure water. Similarly, a yttrium solution was prepared by mixing yttrium nitrate as a rare earth salt with ultrapure water, and mixed with the cerium solution so that the cerium content was in the range of 71 mol% to 79 mol% to prepare a cerium-yttrium mixed solution.

[0050] Next, an alkaline solution is prepared. As the alkali compound of the alkaline solution, urea or a urea-based compound can be used, which is mixed with ultrapure water and adjusted to an appropriate concentration for use. Here, as the urea compound, dimethylacetylurea, benzenesulfonylurea, trimethylurea, tetraethylurea, tetramethylurea, triphenylurea, tetraphenylurea, etc. can also be used.

[0051] The ion concentration in the cerium-yttrium mixed solution whose cerium content is adjusted to be 71 mol% or more and 79 mol% or less can be set t...

Embodiment 1

[0068] 2.84 g of 1 mol / l cerium nitrate solution and 1.16 g of 1 mol / l yttrium nitrate solution were diluted with pure water so that the ion concentration of cerium became 71 mol % and the ion concentration of yttrium became 29 mol %, thereby preparing 400 g of cerium yttrium mixture.

[0069] Next, 48 g of a 5 mol / l urea solution was diluted with 600 g of pure water to prepare a urea solution, and mixed with the cerium-yttrium mixed solution to prepare 1000 g of a reaction solution.

[0070] The prepared reaction solution was charged into a separable flask, and the reaction solution was heated and stirred at 90° C. for 2 hours to precipitate particles in the reaction solution.

[0071] The precipitated particles were collected by a centrifuge and dried to obtain polishing particles. The composition ratio of the obtained polishing particles based on ICP-AES elemental analysis was 71 mol% of cerium and 29 mol% of yttrium.

[0072] In addition, the average primary particle dia...

Embodiment 2

[0077] 3.12 g of 1 mol / l cerium nitrate solution and 0.88 g of 1 mol / l yttrium nitrate solution were diluted with pure water to prepare 400 g of cerium yttrium mixture.

[0078] Then, a polishing agent was prepared in the same procedure as in Example 1, and the synthetic quartz glass substrate W was polished. The composition ratio of the obtained polishing particles based on ICP-AES elemental analysis was 79 mol% of cerium and 21 mol% of yttrium.

[0079] In addition, the average primary particle diameter converted by the transmission electron microscope was 350 nm. The polishing rate was 1.2 μm / hr, and the number of defects was 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
particle sizeaaaaaaaaaa
particle sizeaaaaaaaaaa
Login to View More

Abstract

The present invention is a polishing agent for synthetic quartz glass substrates, which contains polishing particles and water, and which is characterized in that: the polishing particles are composite oxide particles of cerium and yttrium; and the cerium content in the polishing particles is from 71 mol% to 79 mol% (inclusive). Consequently, the present invention is able to provide a polishing agent for synthetic quartz glass substrates, which is capable of sufficiently reducing the occurrence of defects in the surface of a synthetic quartz glass substrate due to polishing without lowering the polishing rate.

Description

technical field [0001] The present invention relates to a polishing agent for a synthetic quartz glass substrate, a preparation method thereof, and a polishing method for a synthetic quartz glass substrate using the polishing agent. Background technique [0002] In recent years, due to miniaturization of patterns by photolithography, quality such as defect density, defect size, surface roughness, and flatness of synthetic quartz glass substrates has been more strictly required. Among them, along with the high-definition of integrated circuits and the high-capacity of magnetic media, it is required to further improve the quality of defects on the substrate. [0003] From the above point of view, for the polishing agent for synthetic quartz glass substrates, in order to improve the quality of the polished quartz glass substrates, it is strongly required that the surface roughness of the polished quartz glass substrates is small and the scratches on the polished quartz glass su...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14C09G1/02B24B37/00C03C19/00
CPCB24B37/00C03C19/00B24B7/241C09K3/1436C09K3/1463C09K3/1409
Inventor 高桥光人
Owner SHIN ETSU CHEM IND CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com