Polishing liquid for germanium wafer and preparation method thereof

A technology for polishing liquid and wafer, applied in the field of polishing liquid for germanium wafer and its preparation, can solve the problems of high thermal oxidation stacking fault density, metal ion contamination, secondary defect electrical characteristics, etc., and achieves fast polishing rate and particle stickiness. Less contamination and less damage to the wafer surface

Inactive Publication Date: 2007-12-05
天津晶岭电子材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, chromium ion and copper ion polishing have the following disadvantages: due to the deep damage layer on the polished surface of germanium wafers, the thermal oxidation fault density is high, about 10 5 -10 6 cm -2 ; Second, copper ion polishing is prone to metal ion contamination, causing secondary defects and changes in electrical characteristics

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] A polishing solution for germanium wafers, composed of water-soluble silica sol, alkyl alcohol amide, potassium hydroxide, hexahydroxypropylpropylenediamine and deionized water, the weight percentage of various components is: water-soluble silica sol 20%, particle size 20nm ~ 30nm; alkanolamide 0.3%; potassium hydroxide 2%; hexahydroxypropylpropylenediamine 0.6%; deionized water as the balance. The preparation method of the polishing liquid is as follows: firstly, filter and purify the various components of the prepared polishing liquid, and then pass the various components through the mass The flow meter is input into the container tank and stirred thoroughly, and the mixture is uniform. Dilute the above polishing liquid and deionized water by 1:10, and experiment on Lanxin X62 815-1 single-side polishing machine: at 300g / cm 2 , 40±5°C, 3L±0.3L / min, the germanium wafer with crystal orientation was polished at a rate of 0.7μ / min.

Embodiment 2

[0015] A kind of polishing liquid for germanium wafer, by CeO 2 Hydrosol, fatty alcohol polyoxyethylene ether, sodium hydroxide, tetrahydroxyethylethylenediamine and deionized water, the weight percentage of various components is: CeO 2 30% hydrosol, particle size 30nm-40nm; fatty alcohol polyoxyethylene ether 0.4%; sodium hydroxide 1%; tetrahydroxyethylethylenediamine 0.9%; deionized water as the balance. The preparation method of the polishing liquid is as follows: firstly, filter and purify the various components of the prepared polishing liquid, and then pass the various components through the mass The flow meter is input into the container tank and stirred thoroughly, and the mixture is uniform. Dilute the above polishing liquid and deionized water by 1:10, and experiment on Lanxin X62 815-1 single-side polishing machine: at 300g / cm 2 , 40±5°C, 3L±0.3L / min, the germanium wafer with crystal orientation was polished at a rate of 1.1μ / min.

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PUM

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Abstract

The germanium wafer polishing fluid consists of abradant 10.0-50.0 wt%, surfactant 0.1-1.0 wt%, pH value regulator 1.0-5.0 wt%, chelating agent 0.1-1.0 wt% and deionized water for the rest; and has pH 8-12, and grain size of 15-100 nm. It is prepared through filtering all the ingredients, and mixing via stirring under the action of negative pressure in a clean condition. The germanium wafer polishing fluid has the advantages of high polishing speed, high polished flatness, small grain size causing less surface damage of wafer, simple preparation process and easy use.

Description

(1) Technical field [0001] The invention relates to a polishing liquid and a preparation method thereof, in particular to a polishing liquid for germanium wafers and a preparation method thereof. (2) Background technology [0002] There are many kinds of traditional germanium wafer polishing solutions, such as magnesium oxide aqueous solution, zirconium dioxide oxidizing solution, chromium trioxide acidic solution and copper ion acidic solution. Chromium ion and copper ion chemical mechanical polishing have been widely used because of their better surface flatness. However, chromium ion and copper ion polishing have the following disadvantages: due to the deep damage layer on the polished surface of germanium wafers, the thermal oxidation fault density is high, about 10 5 -10 6 cm -2 ; Second, copper ion polishing is prone to metal ion contamination, causing secondary defects and changes in electrical characteristics. (3) Contents of the invention [0003] The purpose ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09G1/14
Inventor 仲跻和
Owner 天津晶岭电子材料科技有限公司
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