Silicon oxide-cerium oxide nuclear shell compounded abrasive granules, and preparation and application thereof

A composite abrasive and cerium oxide technology, which is applied in grinding/polishing equipment, chemical instruments and methods, grinding machines, etc., can solve problems affecting polishing effect, pollution of reaction waste liquid, secondary agglomeration of particles, etc., and achieve good industrial utilization value , save cost, improve the effect of low selection ratio

Active Publication Date: 2010-09-01
SHANGHAI XINANNA ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

People such as Chai Mingxia also mentioned the application of silicon oxide-cerium oxide composite abrasive in glass polishing in "Journal of Inorganic Chemistry" 2007, (4): 623-629, but the silicon oxide used is made from organosilicon, an

Method used

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  • Silicon oxide-cerium oxide nuclear shell compounded abrasive granules, and preparation and application thereof
  • Silicon oxide-cerium oxide nuclear shell compounded abrasive granules, and preparation and application thereof
  • Silicon oxide-cerium oxide nuclear shell compounded abrasive granules, and preparation and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0048] Example 1

[0049] The preparation steps of the high-purity silica sol (which contains silica abrasive particles with a particle size of 80 nm, and based on the high-purity silica sol abrasive, the weight percent of the silica abrasive particles is 10%) are as follows:

[0050] 1) Primary purity: dilute the water glass to SiO The weight content is not higher than 15%, filter, and then exchange the filtrate through cation resin to remove sodium ions and other cation impurities;

[0051] 2) Preparation of seed crystals: the pH of the initially purified liquid is adjusted to 11.0, and the temperature is gradually heated to 60-135° C. under stirring conditions, the polymerization of the seed crystals is carried out, and a high uniformity of silica sol is obtained after cooling;

[0052] 3) Increase the particle size: the high-dispersion silica sol obtained in the seed crystal preparation process is heated to 60~135 ° C under stirring conditions, and the temperature is not h...

Example Embodiment

[0057] Example 2

[0058] Preparation of high-purity silica sol (containing silica abrasive particles with a particle size of 140 nm, and the weight percent of silica abrasive particles is 10% based on the high-purity silica sol abrasive), the preparation method is the same as that in Example 1 , wherein the step of increasing the particle size is repeated to obtain a high-purity silica sol with a larger particle size.

[0059] Take 200g of high-purity silica sol with a particle size of 140nm and a concentration of 10% obtained by crystal growth, add 0.1g of PVP, then heat to 100°C, add 200g of a mixed solution containing 19.12g of ceric ammonium nitrate and 8.37g of urea, After the reaction is completed, it is aged for 2 hours, then ultrafiltered, diluted with deionized water after ultrafiltration, and then ultrafiltered to obtain the initial product of the silicon oxide-cerium oxide composite abrasive; then the initial product is placed in water Thermal reaction kettle, cry...

Example Embodiment

[0071] Example 3

[0072] The preparation method of high-purity silica sol (which contains silica abrasive particles with a particle size of 20 nm, and the weight percentage of silica abrasive particles is 2% based on the high-purity silica sol abrasive) is the same as that in Example 1.

[0073] Take 200g of high-purity silica sol with a particle size of 20nm and a concentration of 2% obtained by crystal growth, add 0.8g of PVP, then heat to 70°C, add 200g of a mixed solution containing 0.8g of cerium nitrate and 0.8g of ammonia water, and then Add 0.1 g of hydrogen peroxide, age for 5 hours after the reaction is completed, then carry out ultrafiltration, dilute with deionized water after ultrafiltration, and then ultrafiltration to obtain the initial product of silicon oxide-cerium oxide composite abrasive; The initial product was placed in a hydrothermal reactor and crystallized at 240° C. for 1 hour to obtain core-shell composite abrasive particles with a particle size of ...

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Abstract

The invention belongs to the field of polishing solution of chemical machinery in microelectronic processing, and particularly relates to silicon oxide-cerium oxide nuclear shell compounded abrasive granules, and a preparation and application thereof. The silicon oxide-cerium oxide nuclear shell compounded abrasive granules comprise silicon oxide and cerium oxide, the inner core of each compounded abrasive granule is spherical silicon oxide, and the shell is a cerium oxide coating layer. When being used for polishing very large-scale integrated circuit glass, silicon dioxide dielectric layersand STI, the polishing solution prepared from the silicon oxide-cerium oxide nuclear shell compounded abrasive granules can increase the polishing removal rate and polishing selection ratio and reduce the polishing defects.

Description

technical field [0001] The invention belongs to the field of chemical mechanical polishing slurry in microelectronic processing, and in particular relates to silicon oxide-cerium oxide core-shell composite abrasive particles and its preparation and application. Background technique [0002] With the rapid development of the integrated circuit (IC) industry, the size of IC features is shrinking, the size of silicon wafers is increasing, and the IC process is becoming more and more complex and sophisticated. At present, microelectronics technology has been developing toward integrating billions of components on a chip, which has led to a three-dimensional chip structure and multi-layer wiring. However, in order to realize the wiring multi-layer three-dimensional structure on the large-diameter silicon wafer, the etching process requires that each layer should have a high global flatness, especially the flatness of the layer surface, which is the key to realize multi-layer wiri...

Claims

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Application Information

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IPC IPC(8): C09K3/14C09G1/02H01L21/3105H01L21/762B24B7/24
Inventor 张泽芳刘卫丽宋志棠
Owner SHANGHAI XINANNA ELECTRONICS TECH
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