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Silicon oxide-cerium oxide nuclear shell compounded abrasive granules, and preparation and application thereof

A composite abrasive and cerium oxide technology, which is applied in grinding/polishing equipment, chemical instruments and methods, grinding machines, etc., can solve problems affecting polishing effect, pollution of reaction waste liquid, secondary agglomeration of particles, etc., and achieve good industrial utilization value , save cost, improve the effect of low selection ratio

Active Publication Date: 2010-09-01
SHANGHAI XINANNA ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

People such as Chai Mingxia also mentioned the application of silicon oxide-cerium oxide composite abrasive in glass polishing in "Journal of Inorganic Chemistry" 2007, (4): 623-629, but the silicon oxide used is made from organosilicon, and the cost is relatively low. High, and the pollution of the reaction waste liquid is serious, and the process of preparing abrasives needs to be calcined, which may cause secondary agglomeration of particles and affect the polishing effect

Method used

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  • Silicon oxide-cerium oxide nuclear shell compounded abrasive granules, and preparation and application thereof
  • Silicon oxide-cerium oxide nuclear shell compounded abrasive granules, and preparation and application thereof
  • Silicon oxide-cerium oxide nuclear shell compounded abrasive granules, and preparation and application thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] The preparation steps of high-purity silica sol (wherein containing particle diameter is the silica abrasive particle of 80nm, and based on described high-purity silica sol abrasive, the weight percent of silica abrasive particle is 10%) are as follows:

[0050] 1) Initial purification: dilute water glass to SiO2 The weight content is no more than 15%, filter, and then exchange the filtrate with a cationic resin to remove sodium ions and other cationic impurities;

[0051] 2) Preparation of seed crystals: Adjust the pH of the initially purified liquid to 11.0, gradually heat up to 60-135°C under stirring conditions, carry out polymerization of seed crystals, and prepare silica sol with high uniformity after cooling;

[0052] 3) Increase the particle size: heat up the high-dispersion silica sol prepared in the seed crystal preparation process to 60~135°C under stirring conditions, add the liquid obtained from primary purification at a temperature not higher than 50°C, and...

Embodiment 2

[0058] The preparation of high-purity silica sol (wherein containing particle diameter is the silica abrasive particle of 140nm, and based on described high-purity silica sol abrasive, the weight percent of silica abrasive particle is 10%), preparation method is the same as embodiment 1 , wherein the step of increasing the particle size is repeated to obtain a high-purity silica sol with a larger particle size.

[0059] Take 200g of 10% high-purity silica sol with a particle size of 140nm and a concentration of 200g obtained by crystal growth, add 0.1g of PVP, then heat to 100°C, add 200g of a mixed solution containing 19.12g of ceric ammonium nitrate and 8.37g of urea, After the reaction is completed, age for 2 hours, then perform ultrafiltration, dilute with deionized water after ultrafiltration, and then obtain the primary product of silicon oxide-cerium oxide composite abrasive after ultrafiltration; then put the primary product into water Thermal reaction kettle, crystall...

Embodiment 3

[0072] The preparation method of high-purity silica sol (which contains silica abrasive particles with a particle size of 20nm, and based on the high-purity silica sol abrasive, the weight percentage of silica abrasive particles is 2%) is the same as in Example 1.

[0073] Get 200g particle diameter that is 20nm by crystal growth, concentration is 2% high-purity silica sol, add 0.8gPVP, then be heated to 70 ℃, add the mixed solution that 200g contains the ammoniacal liquor of 0.8g cerium nitrate and 0.8g, then Add 0.1g of hydrogen peroxide, age for 5 hours after completion of the reaction, then carry out ultrafiltration, dilute with deionized water after ultrafiltration, and then after ultrafiltration treatment, the first product of silicon oxide-cerium oxide composite abrasive can be obtained; The initial product was placed in a hydrothermal reaction kettle, and crystallized at 240° C. for 1 hour to finally obtain core-shell composite abrasive particles with a particle size of...

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Abstract

The invention belongs to the field of polishing solution of chemical machinery in microelectronic processing, and particularly relates to silicon oxide-cerium oxide nuclear shell compounded abrasive granules, and a preparation and application thereof. The silicon oxide-cerium oxide nuclear shell compounded abrasive granules comprise silicon oxide and cerium oxide, the inner core of each compounded abrasive granule is spherical silicon oxide, and the shell is a cerium oxide coating layer. When being used for polishing very large-scale integrated circuit glass, silicon dioxide dielectric layersand STI, the polishing solution prepared from the silicon oxide-cerium oxide nuclear shell compounded abrasive granules can increase the polishing removal rate and polishing selection ratio and reduce the polishing defects.

Description

technical field [0001] The invention belongs to the field of chemical mechanical polishing slurry in microelectronic processing, and in particular relates to silicon oxide-cerium oxide core-shell composite abrasive particles and its preparation and application. Background technique [0002] With the rapid development of the integrated circuit (IC) industry, the size of IC features is shrinking, the size of silicon wafers is increasing, and the IC process is becoming more and more complex and sophisticated. At present, microelectronics technology has been developing toward integrating billions of components on a chip, which has led to a three-dimensional chip structure and multi-layer wiring. However, in order to realize the wiring multi-layer three-dimensional structure on the large-diameter silicon wafer, the etching process requires that each layer should have a high global flatness, especially the flatness of the layer surface, which is the key to realize multi-layer wiri...

Claims

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Application Information

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IPC IPC(8): C09K3/14C09G1/02H01L21/3105H01L21/762B24B7/24
Inventor 张泽芳刘卫丽宋志棠
Owner SHANGHAI XINANNA ELECTRONICS TECH
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