Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A halogen passivated perovskite quantum dot, a preparation method thereof and a QLED device are provided

A technology of quantum dots and quantum dot solutions, applied in the field of quantum dots, can solve the problems of reduced fluorescence intensity of inorganic perovskite quantum dots, and achieve the effects of improving fluorescence intensity and charge transfer efficiency, effective passivation, and reducing surface defects

Active Publication Date: 2019-01-22
TCL CORPORATION
View PDF3 Cites 28 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a halogen-passivated perovskite quantum dot and its preparation method and QLED device, aiming to solve the problem of using short-chain ligands to exchange inorganic perovskite in the prior art. Long-chain insulating ligands on quantum dots will lead to a decrease in the fluorescence intensity of inorganic perovskite quantum dots

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A halogen passivated perovskite quantum dot, a preparation method thereof and a QLED device are provided
  • A halogen passivated perovskite quantum dot, a preparation method thereof and a QLED device are provided
  • A halogen passivated perovskite quantum dot, a preparation method thereof and a QLED device are provided

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045] The chlorine element passivation CsPbBr of the present embodiment 3 A method for preparing quantum dots, comprising the steps of:

[0046] (1), preparation of cesium oleate Cs(OA) stock solution:

[0047] Weigh 0.814g of cesium carbonate Cs 2 CO 3 Add to a 100ml three-neck flask, add 30ml of octadecene (ODE) and 2.5ml of oleic acid (OA) to the flask;

[0048] Under an inert gas, first exhaust at room temperature for 20 minutes, then heat to 120°C and exhaust for 60 minutes, and finally heat to 160°C to make all the cesium carbonate Cs 2 CO 3 React with oleic acid, then keep the solution temperature at 160°C to avoid solidification of cesium oleate Cs(OA) solution, and prepare cesium oleate Cs(OA) stock solution.

[0049] (2), CsPbBr 3 Preparation of quantum dots:

[0050] Take 50ml of octadecene (ODE), 5ml of oleylamine (OAm) and 0.7g of lead bromide (PbBr 2 ) together into a 100ml three-necked flask, first exhaust at room temperature for 20 minutes under inert ...

Embodiment 2

[0056] The iodine element passivated CsPbBr of the present embodiment 3 A method for preparing quantum dots, comprising the steps of:

[0057] (1), using the method of Example 1 of the present invention to prepare CsPbBr 3 Quantum dot toluene solution;

[0058] (2), CsPbBr passivated by iodine element 3 Preparation of quantum dots:

[0059] Add 50 μl of oleic acid (OA) to the quantum dot toluene solution and stir for 30 min, then add 100 μl of 0.05 mmol iodopentafluorobenzene (IPFB) solution and stir for another 30 min, and finally mix with butanol The solution was centrifuged and precipitated, and then dispersed in toluene to obtain iodine-passivated CsPbBr 3 Quantum dot solution.

[0060] The QLED device of this embodiment, such as image 3 As shown, it includes an anode 14, a hole transport layer 16, a quantum dot light-emitting layer 18, an electron transport layer 20 and a cathode 22 stacked on the substrate 12 from bottom to top, wherein the quantum dot light-emitt...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a halogen passivated perovskite quantum dot, a preparation method thereof and a QLED device, wherein, the preparation method comprises the following steps: adding a ligand withdeprotonation effect into an inorganic perovskite quantum dot solution, carrying out ligand exchange reaction to obtain an inorganic perovskite quantum dot solution after the first ligand exchange; Then, the polar organic halide is added into the inorganic perovskite quantum dot solution after the first ligand exchange to perform halogen passivation on the surface of the inorganic perovskite quantum dot, and the halogen passivated inorganic perovskite quantum dot is obtained by centrifugation. The invention can effectively passivate the metal and non-metal elements on the surface of the inorganic perovskite quantum dot, reduce the surface defects of the inorganic perovskite quantum dot, thereby improving the fluorescence intensity and the charge transmission efficiency of the inorganic perovskite quantum dot.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a halogen-passivated perovskite quantum dot, a preparation method thereof, and a QLED device. Background technique [0002] At present, research progress on perovskite light-emitting diodes mainly focuses on organic-inorganic perovskite materials (such as CH 3 NH 3 PbBr), this material can obtain higher device efficiency in green light, and its External Quantum Efficiency (EQE) value reaches 8.53%. However, due to the sensitivity of organic-inorganic perovskite materials to light and heat, the thermal stability of light-emitting diodes prepared from them is poor. [0003] Compared with organic and inorganic perovskite materials, inorganic perovskite quantum dot materials (such as CsPbX 3 (X = Cl, Br, and I)) exhibit superior thermal stability. However, when inorganic perovskite quantum dot materials were used to prepare light-emitting diodes, it was found that the EQE value of the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56H01L51/50C09K11/02
CPCC09K11/025H10K50/115H10K71/00H10K50/00H10K85/50C09K11/02
Inventor 程陆玲杨一行
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com