Quantum dot luminescent layer and preparation method thereof, and quantum dot light-emitting diode (QLED) and preparation method thereof

A quantum dot light-emitting and diode technology, which is used in the manufacture of semiconductor/solid-state devices, electrical components, and electric solid-state devices, etc., can solve the problems of uneven coverage, uneven thickness, and easy peeling of the quantum dot light-emitting layer. Achieve the effect of maintaining interface stability and interface properties and passivating surface defects

Active Publication Date: 2017-04-26
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting layer, a quantum dot light-emitting diode and a preparation method thereof, aiming at solving the uneven coverage and uneven thickness of the quantum dot light-emitting layer prepared by the existing solution method , The quantum dot light-emitting layer is easy to peel off, and the quantum dot light-emitting layer and the device interface have many defects

Method used

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  • Quantum dot luminescent layer and preparation method thereof, and quantum dot light-emitting diode (QLED) and preparation method thereof
  • Quantum dot luminescent layer and preparation method thereof, and quantum dot light-emitting diode (QLED) and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0061] 1) Preparation of quantum dot solution:

[0062] NH was added to the CdSe / ZnS quantum dot solution coated with mercaptopropionic acid (MPA) ligands at a ratio of 1:0.01 by mass percentage. 2 -(CH 2 ) 2 -COOH, to obtain amino acid modified CdSe / ZnS quantum dot solution.

[0063] 2) Preparation of quantum dot light-emitting diodes:

[0064] Spin-coat a layer of PEDOT:PSS thin film on the ITO substrate as the hole injection layer;

[0065] On the PEDOT:PSS layer, spin-coat a layer of PVK film as a hole transport layer;

[0066] Then, the amino acid-modified quantum dot solution prepared in the above 1) was spin-coated on the PVK layer to obtain a dense and smooth CdSe / ZnS quantum dot light-emitting layer modified by amino acid cross-linking and tightly anchored on the PVK layer ;

[0067] Next, spin-coat a layer of ZnO film on the CdSe / ZnS quantum dot light-emitting layer as an electron transport layer;

[0068] Finally, a layer of Al is vapor-deposited on the ZnO l...

Embodiment 2

[0070] 1) Preparation of quantum dot solution:

[0071] NH was added to the CdSe / ZnS quantum dot solution coated with mercaptopropionic acid (MPA) ligands at a ratio of 1:0.05 by mass percentage. 2 -(CH 2 ) 4 -COOH, to obtain amino acid modified CdSe / ZnS quantum dot solution.

[0072] 2) Preparation of quantum dot light-emitting diodes:

[0073] Spin-coat a layer of PEDOT:PSS thin film on the ITO substrate as the hole injection layer;

[0074] Spin-coat a layer of TFB film on the PEDOT:PSS layer as a hole transport layer;

[0075] Then, the amino acid-modified quantum dot solution prepared in the above 1) was spin-coated on the TFB layer to obtain a dense and smooth CdSe / ZnS quantum dot light-emitting layer modified by amino acid cross-linking and tightly anchored on the TFB layer ;

[0076] Next, spin-coat a layer of ZnO film on the CdSe / ZnS quantum dot light-emitting layer as an electron transport layer;

[0077] Finally, a layer of Al is vapor-deposited on the ZnO la...

Embodiment 3

[0079] 1) Preparation of quantum dot solution:

[0080] NH was added to the CdSe / ZnS quantum dot solution coated with thioglycolic acid (TGA) ligands at a ratio of 1:0.02 by mass percentage. 2 -(CH 2 ) 11 -COOH, to obtain amino acid modified CdSe / ZnS quantum dot solution.

[0081] 2) Preparation of quantum dot light-emitting diodes:

[0082] Spin-coat a layer of PEDOT:PSS thin film on the ITO substrate as the hole injection layer;

[0083] Spin-coat a layer of TFB film on the PEDOT:PSS layer as a hole transport layer;

[0084] Then, the amino acid-modified quantum dot solution prepared in the above 1) was spin-coated on the TFB layer to obtain a dense and smooth CdSe / ZnS quantum dot light-emitting layer modified by amino acid cross-linking and tightly anchored on the TFB layer ;

[0085] Next, spin-coat a layer of ZnO film on the CdSe / ZnS quantum dot light-emitting layer as an electron transport layer;

[0086] Finally, a layer of Al is vapor-deposited on the ZnO layer ...

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Abstract

The invention discloses a quantum dot luminescent layer and a preparation method thereof, and a quantum dot light-emitting diode (QLED) and a preparation method thereof. The preparation method of the quantum dot luminescent layer comprises the following steps: dissolving a quantum dot whose surface is clad with a ligand in a solvent so as to obtain a quantum dot solution; adding amino acid in the quantum dot solution to obtain an amino modified quantum dot solution; and through a solution method, preparing the amino modified quantum dot solution into the quantum dot luminescent layer on a substrate or a function layer. According to the invention, the amino acid is added to the quantum dot solution, on one hand, the formed quantum dot luminescent layer is totally uniformly covered and is compact and flat; and on the other hand, through introduction of the amino acid, the quantum dot luminescent layer can be closely anchored on the substrate or the function layer below or above the quantum dot luminescent layer, the quantum dot luminescent layer is enabled to be closely connected with the substrate or the function layer, the interface stability and the interface property are maintained, surface defects of the quantum dot are passivated, the electron injection efficiency is effectively improved, the life of a QLED device is prolonged, and the stability of the QLED device is improved.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a quantum dot light emitting layer, a quantum dot light emitting diode and a preparation method thereof. Background technique [0002] Quantum dots (Quantum dots, QDs) are quasi-zero-dimensional nanomaterials, which have special advantages such as narrow emission spectrum, high light color purity, high luminous efficiency, adjustable luminous color, good luminous stability, and long service life. Quantum dot light-emitting diodes (QLEDs), which use quantum dot materials as the light-emitting layer, have attracted extensive attention and become the main research direction of the next generation of LEDs. [0003] Most of the currently researched QLED devices are prepared by solution methods, such as spin coating, printing, etc. Compared with evaporation coating methods, solution methods are not only simple, but also low in cost, and are considered to be the most poten...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/12H10K50/115H10K71/00
Inventor 梁柱荣曹蔚然
Owner TCL CORPORATION
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