113results about How to "Excellent characteristic" patented technology

An azomethine compound is represented by the formula (I). 1 and R.sup.1, L.sup.1, L.sup.2, R.sup.3 and R.sup.4 have 20 to 50 carbon atoms in total.

An electrode material comprising a particle containing at least one member selected from the particles containing silicon, tin, silicon compound and tin compound, and fibrous carbon. The particle includes: (1) a particle comprising at least one member of a silicon particle, tin particle, particle containing a lithium-ion-intercalatable/releasable silicon compound and particle containing a lithium-ion-intercalatable/releasable tin compound; or (2) a particle comprising a silicon and/or silicon compound-containing carbonaceous material deposited onto at least a portion of the surfaces of a carbon particle having a graphite structure. The lithium secondary battery using the electrode material as a negative electrode has high discharging capacity and is excellent in cycle characteristics and characteristics under a load of large current.

A deflector mirror is disclosed that includes a mirror substrate configured to vibrate in a reciprocating manner on beams as a torsional rotary shaft so as to deflect a light beam emitted from a light source. The mirror substrate includes multiple regions in each of portions thereof extending from the torsional rotary shaft to respective ends of the mirror substrate, the regions being different in flexural rigidity.

Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.

The present invention provides a core-shell magnetic material having an excellent characteristic in a high frequency band, particularly, in a GHz band. The core-shell magnetic material includes: core-shell magnetic particles including magnetic metal particles and an oxide coating layer, the magnetic metal particle containing magnetic metal selected from the group of Fe, Co, and Ni, nonmagnetic metal selected from the group of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, a rare-earth element, Ba, and Sr, and an element selected from carbon and nitrogen, and the oxide coating layer being made of an oxide containing at least one nonmagnetic metal as one of the components of the magnetic metal particle; and oxide particles existing at least a part between the magnetic metal particles and containing nonmagnetic metal selected from the group of Mg, Al, Si, Ca, Zr, Ti, Hf, Zn, Mn, a rare-earth element, Ba, and Sr, and in which nonmagnetic metal/magnetic metal (atomic ratio) in the particles is higher than that in the oxide coating layer.

A non-aqueous electrolyte secondary battery of the present invention includes a pelletized negative electrode. An active material for the negative electrode includes a first phase mainly composed of Si and a second phase containing a silicide of a transition metal. At least one of the first and second phases is amorphous or low-crystalline. The mean particle size (D50) is 0.50 to 20 μm, and the 10% diameter (D10) and 90% diameter (D90) in a volume cumulative particle size distribution are respectively 0.10 to 5.0 μm and 5.0 to 80 μm. The battery is improved in density and current collecting properties of the negative electrode, has a high capacity, and has an excellent cycle life.

A liquid crystal display apparatus includes a first polarizer located on one side of a first substrate, a second polarizer located on the opposite side of a second substrate, a liquid crystal layer formed of liquid crystal molecules and between the first and the second substrates so that the liquid crystal molecules may be aligned in parallel to the first or the second substrate and to which an electric field is applied in parallel to the first substrate, and a lighting device. The first or the second polarizer includes a polarization layer and supporting materials located on both sides of the polarization layer, reducing light leakage and a colour shift in a black display state when viewed from the oblique direction.

An electrode for a lithium ion secondary battery having a collector, an active-material layer formed on the collector and a protecting layer formed on the active-material layer, in which the protecting layer contains an organic particle formed of poly(methyl methacrylate) having a crosslinked structure, and the organic particle has an average particle size (D50) of 0.5 to 4.0 μm.

A foam-type hair dye apparatus, has a container main body in which liquid hair dye containing a dye, surfactant, and thickener is stored; at least one jetting orifice for jetting the liquid hair dye from the container main body; and a liquid reservoir member disposed opposite the jetting orifice. The jet flow of liquid hair dye from the jetting orifice is blended with air from outside the container and transformed into foam-type hair dye in the liquid reservoir member. A foam-type hair dye discharge apparatus according to another embodiment uses a double aerosol container including an inner bag filled with undiluted solution; an outer container disposed on the external side of the inner bag and filled with compressed gas in the space between the outer container and the inner bag; and a valve mechanism.

A method for fabricating a gallium arsenide MOSFET device is presented. A dummy gate is formed over a gallium arsenide substrate. Source-drain extensions are implanted into the substrate adjacent the dummy gate. Dummy spacers are formed along dummy gate sidewalls and over a portion of the source-drain extensions. Source-drain regions are implanted. Insulating spacers are formed on dummy oxide spacer sidewalls. A conductive layer is formed over the source-drain regions. The conductive layer is annealed to form contacts to the source-drain regions. The dummy gate and the dummy oxide spacers are removed to form a gate opening. A passivation layer is in-situ deposited in the gate opening. The surface of the passivation layer is oxidized to create an oxide layer. A dielectric layer is ex-situ deposited over the oxide layer. A gate metal is deposited over the dielectric layer to form a gate stack in the gate opening.

Flowlines for use in oil and gas applications are described. The flowlines include a barrier layer that includes polyarylene sulfide composition that exhibits high strength and flexibility characteristics. Methods for forming the flowlines are also described. Formation methods include dynamic vulcanization of a polyarylene sulfide composition that includes an impact modifier dispersed throughout the polyarylene sulfide. A crosslinking agent is combined with the other components of the composition following dispersal of the impact modifier throughout the composition. The flowlines can include production fluid flowlines, supporting fluid flowlines, bundled flowlines, etc. and can be utilized as risers, pipelines, jumpers, and the like.

Provided is a cathode active material containing a Ni-based lithium mixed transition metal oxide. More specifically, the cathode active material comprises the lithium mixed transition metal oxide having a composition represented by Formula I of Li_xM_yO₂ wherein M, x and y are as defined in the specification, which is prepared by a solid-state reaction of Li₂CO₃ with a mixed transition metal precursor under an oxygen-deficient atmosphere, and has a Li₂CO₃ content of less than 0.07% by weight of the cathode active material as determined by pH titration. The cathode active material in accordance with the present invention and substantially free of water-soluble bases such as lithium carbonates and lithium sulfates and therefore has excellent high-temperature and storage stabilities and a stable crystal structure. A secondary battery comprising such a cathode active material exhibits a high capacity and excellent characteristics, and can be produced by an environmentally friendly method with low production costs and high production efficiency.

A mirror driving device can include: a mirror part having a reflection surface configured to reflect light; mirror support parts formed at portions of the mirror part diagonal to each other; and a first actuator and a second actuator placed so as to surround the mirror part, wherein the first actuator and the second actuator each have a structure in which a plurality of first piezoelectric cantilevers with a longitudinal direction oriented to a direction of a first axis and a plurality of second piezoelectric cantilevers with a longitudinal direction oriented to a second axis are coupled together so as to be folded, and each of the first actuator and the second actuator has one end connected to the mirror part via a relevant one of the mirror support parts and another end connected to a fixing part near the mirror support part to which the one end is coupled.

An inductor includes a coil electrode section in which a first spiral electrode and a second spiral electrode are wound in substantially the same direction, lie in substantially the same plane, and are connected to each other by a connection electrode. The coil electrode section is sandwiched by the first magnetic layer and the second magnetic layer from both directions substantially perpendicular to the plane. A first protrusion electrode and a second protrusion electrode at ends of the first spiral electrode and the second spiral electrode that are opposite to the connection electrode extend in a direction substantially perpendicular to the plane, have a length at which each of the protrusion electrodes protrudes from the first magnetic layer, and define opposite end electrodes of the inductor. Arranging this low-profile inductor on a mounting circuit board achieves a low-profile DC-DC converter including a two-layer structure.

Precipitation hardenable stainless steel endodontic files and methods for their manufacture, wherein the most preferred precipitation hardenable stainless steel is 17-4PH and aging is preferably not one of the manufacturing steps. Precipitation hardenable stainless steels used in embodiments of this invention are iron-chromium-nickel grades that have the desired properties of flexibility, strength, hardness, wear resistance, stiffness, resistance to permanent deformation, resistance to variable torque, and biocompatibility for endodontic files.

This invention is relates to a separator of a power storage device which is a laminate of a polyolefin porous membrane layer and a fiber layer comprising a solvent spun cellulose; and a separator of a power storage device, wherein the separator is a laminate of a polyolefin porous membrane layer and a fiber layer comprising a solvent spun cellulose, and the volume of a cavity part of the fiber layer is smaller than the volume of a resin part of the polyolefin porous membrane layer.

A solar cell, wherein contamination with an undesired impurity is suppressed, and solar cell characteristics are excellent. This solar cell is provided with: a semiconductor substrate having a photoreceiving surface and a back surface; a first semiconductor layer of a first conductivity type formed on a prescribed region of the back surface of the semiconductor substrate; a second semiconductor layer of a second conductivity type formed to extend over the back surface of the semiconductor substrate and the surface of the first semiconductor layer; and a cap layer formed between the first semiconductor layer and the second semiconductor layer, and containing no impurity of the first conductivity type.

An optical recording/reproducing method and an optical recording medium capable of performing excellent optical recording with a simple structure in a recording layer made of environmentally friendly materials. The optical recording medium has a recording layer on a substrate. The recording layer has a pair of dielectric layers of which states are altered by a laser beam that is an energy beam of which intensity is modulated according to information to be recorded. This recording layer also has a assisting material layer sandwiched by these dielectric layers. The assisting material layer includes an element selected from Sn, Ti, Si, Bi, Ge, and C as a principle component, while the dielectric material as a base material for the dielectric layers is any one of ZnS, SiO₂, AlN, and Ta₂O₅.

A film deposition method includes the steps of: coating a solution containing a polysilane compound on a substrate to form a coating film and then carrying out a first thermal treatment in an inert atmosphere, thereby forming the coating film into a silicon film; forming a coating film containing a polysilane compound on the silicon film and then carrying out a second thermal treatment in an inert atmosphere or a reducing atmosphere, thereby forming the coating film into a silicon oxide precursor film; and carrying out a third thermal treatment in an oxidizing atmosphere, thereby forming the silicon oxide precursor film into a silicon oxide film and simultaneously densifying the silicon film.

Provided are an optical film for a protection film for polarizer, excellent in optical properties such as small haze, excellent transparency and small birefringence, having good mechanical strength and heat resistance, and excellent in water vapor transmission rate; a polarizing film having the film as a protection film on one or both surfaces of a polarizer; and an image display device comprising the polarizing film. The optical film for a protection film for polarizer comprises a polypropylene-based resin produced with a metallocene catalyst.

A negative electrode material for a nonaqueous secondary battery capable of realizing a nonaqueous secondary battery having a small charging/discharging irreversible capacity at an initial cycle and exhibiting an excellent high-rate charging/discharging characteristics and an excellent cycle performances is provided. The main component of the material is graphite particles. The median diameter is 5 μm or more, and 40 μm or less in the volume-basis particle size distribution based on the laser diffraction/scattering particle size distribution measurement. The tapping density is 0.7 g/cm³ or more. The specific surface area measured by a BET method is 0.2 m²/g or more, and 8 m²/g or less. The average circularity is 0.83 or more, and 1.00 or less. When an electrode is produced by a predetermined method for manufacturing an electrode and, the resulting electrode is subjected to X-ray diffraction, the graphite crystal orientation ratio I₁₁₀/I₀₀₄ on the electrode is 0.08 or more, where I₁₁₀ represents the wide angle X-ray diffraction peak area of the (110) peak peak in the region of 2θ=76.5 to 78.5 degrees of the graphite particles on the electrode and I₀₀₄ represents the wide angle X-ray diffraction peak area of the (004) peak peak in the region of 2θ=53.5 to 56 degrees.

An apparatus for use in a vacuum stripping process comprises a first stripping vessel (2); at least one second further downstream stripping vessel (3), said at least one second further downstream stripping vessel (3) containing at least two trays (12), (13), (14) and (15) each provided with sparging means (16), (17), (18) and (19) respectively, and further comprises a collector (4) connecting said first stripping vessel (2) and said at least one second stripping vessel (3), said collector (4) being provided with inlet openings above each said tray (12), (13), (14) and (15) and said collector (4) being connected to a pump (5) with a discharge into said first stripping vessel (2).

There is provided a semiconductor optical modulator capable of performing a stable operation and having an excellent voltage-current characteristic to an electric field while exhibiting the characteristic of a semiconductor optical modulator with an n-i-n structure. The semiconductor optical modulator includes a waveguide structure that is formed by sequentially growing an n-type InP clad layer (11), a semiconductor core layer (13) having an electro-optic effect, a p-InAlAs layer (15), and an n-type InP clad layer (16). An electron affinity of the p-InAlAs layer (15) is smaller than an electron affinity of the n-type InP clad layer (16). In the waveguide structure having such a configuration, a non-dope InP clad layer (12) and a non-dope InP clad layer (14) may be respectively provided between the n-type InP clad layer (11) and the semiconductor core layer (13), and between the semiconductor core layer (13) and the p-InAlAs layer (15).

Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. By allowing the MOSFET channel to be either at the surface or buried, one can create high-speed digital and/or analog circuits. The planarization before the device epitaxial layers are deposited ensures a flat surface for state-of-the-art lithography.

A piezoelectric/electrostrictive porcelain composition contains at least Nb, Ta, and one or more kinds of alkali metal elements, and a ratio (molar ratio) of Nb, Ta, and the alkali metal element is represented by a non-stoichiometric composition ratio. The piezoelectric/electrostrictive porcelain composition is capable of obtaining a piezoelectric/electrostrictive device which is dense and which is superior in crystallinity and which exhibits superior piezoelectric/electrostrictive characteristics even in a case where the composition is fired on lower-temperature conditions as compared with a conventional technology.

A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved.

A process for producing propylene oxide, which comprises the following steps below, and a step for removing alcohols of the carbon number of 2 to 3, cyclohexanol and/or isopropylcyclohexane outside of the reaction system in at least one place of the steps or between which the steps are connected:

oxidation step: a step of obtaining cumene hydroperoxide by oxidizing cumene;

epoxidation step: a step of obtaining propylene oxide and cumyl alcohol by reacting cumene hydroperoxide obtained in the oxidation step with propylene in an excess amount in a liquid in the presence of a solid catalyst; and

hydrogenolysis step: a step of obtain cumene by subjecting cumyl alcohol obtained in the epoxidation step to hydrogenolysis, and recycling the cumene to the oxidation step as the raw material for the oxidation step.

Disclosed is a housings for lithium based batteries, suitable for large format batteries, and a method of manufacturing such housings using direct electroplating resin technology. The housing, while maintaining stack pressure and acting as a moisture and electrolyte barrier, is lighter in weight, smaller in volume, and is safer than conventional metal housings. The manufacturing process is well suited for automation and is less expensive than current manufacturing processes.

A cephem compound, wherein the cephem ring has a substituent at the 3-position, which substituent is shown by the formula II, wherein Het is a mono- or polycyclic heterocyclic group comprising one or more hetero atoms selected from the group consisting of N, O and S which may be the same or different from each other; R1 is hydrogen, an optionally substituted lower alkyl or an optionally substituted lower alkenyl; A is an optionally substituted lower alkylene, an optionally substituted lower alkenylene or a single bond; B is an optionally substituted imino or a single bond; or A and B taken together may form a single bond; and D is a single bond or a group of the formula (a):The cephem compounds of the present invention are useful as antibiotic agents.

There is provided a multi-layered chip device, including: a multi-layered body in which a plurality of inner magnetic layers are stacked; an inner electrode layer formed within the multi-layered body; an outer magnetic layer stacked on at least one of an upper surface and a lower surface of the multi-layered body; and external electrodes formed on outside of the multi-layered body and the outer magnetic layer and electrically connected to the inner electrode layer, wherein a length of the outer magnetic layer is shorter than the inner magnetic layer.