Preparation method of three-dimensional dendritic TiO2 (titanium dioxide) array with rapid electronic transmission performance

A technology with three-dimensional dendrites and transmission properties, applied in the direction of titanium dioxide, titanium oxide/hydroxide, circuits, etc., can solve the problems of reducing electron transmission rate and difficult crystal growth, and achieve the effect of improving battery efficiency and short-circuit current

Active Publication Date: 2014-01-22
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

The one-step method can directly grow into a three-dimensional dendritic structure, but it is difficult to control the growth of the crystal; the two-step method first grows a one-dimensional structure, and then grows a branch structure by various methods. This method is better for controlling the shape of the nanostructure , but since the seed layer is often introduced on the one-dimensional structure in the second growth step to induce the growth of branched structures, it is inevitable to introduce some grain boundaries and defects, reducing the rate of electron transport

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  • Preparation method of three-dimensional dendritic TiO2 (titanium dioxide) array with rapid electronic transmission performance
  • Preparation method of three-dimensional dendritic TiO2 (titanium dioxide) array with rapid electronic transmission performance
  • Preparation method of three-dimensional dendritic TiO2 (titanium dioxide) array with rapid electronic transmission performance

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[0035] In a more typical embodiment of the present invention, the three-dimensional dendritic TiO with fast electron transport properties 2 The preparation method of the array may include the following steps:

[0036] (1) Deposit TiO on the cleaned transparent conductive glass by dipping and pulling method 2 For the seed layer, the sol used is a tetrabutyl titanate ethanol solution with a concentration of 0.4 M, and then sintered in an air atmosphere.

[0037] Preferably, the transparent conductive glass used is fluorine-doped tin oxide (FTO) glass, the pulling rate is 100 mm / s, and the sintering temperature is 550o C, the sintering time is 30 min.

[0038] (2) Preparation of one-dimensional TiO by solvothermal method 2 array, put the cleaned transparent conductive glass deposited with the seed layer obtained in step (1) into a high-pressure reactor, and then add a certain proportion of Ti-containing reactants, hydrochloric acid and ketone solvents, and keep it at a certain ...

Embodiment 1

[0048] TiO will be deposited 2 The FTO glass of the seed layer was placed in an autoclave, and 6 mL of hydrochloric acid (37wt%), 6 mL of 2-butanone and 0.4 mL of tetrabutyl titanate were added, at 200 o C for 60 min, after cooling, the sample was taken out, rinsed with ethanol, soaked in a mixed solution of hydrogen peroxide and ammonia with a volume ratio of 10:1 for 10 min, and rinsed with deionized water. Put the processed sample into the reaction vessel, add 0.1 mL of titanium trichloride hydrochloric acid solution (20wt% titanium trichloride dissolved in 2M hydrochloric acid), 0.2 mL of hydrochloric acid (37wt%) and 10 mL of deionized water, at 80 o C for 90 min, after cooling, the samples were taken out, rinsed with deionized water, and then processed in an oxygen plasma cleaner with an oxygen flow rate of 0.6 L / min, with a power of 50 W and a processing time of 10 min. Finally, the sample was placed in an oxygen atmosphere with an oxygen flow rate of 0.5 L / min for 45...

Embodiment 2

[0051] TiO will be deposited 2 The FTO glass of the seed layer was placed in an autoclave, and 6 mL of hydrochloric acid (37wt%), 6 mL of pentanone, and 0.6 mL of tetrabutyl titanate were added to the autoclave at 200 o C for 50 min, after cooling, the sample was taken out, rinsed with ethanol, soaked in a mixed solution of hydrogen peroxide and ammonia at a volume ratio of 10:1 for 10 min, and rinsed with deionized water. Put the processed sample into the reaction vessel, add 0.05 mL of titanium trichloride hydrochloric acid solution (20wt% titanium trichloride dissolved in 2M hydrochloric acid), 0.1 mL of hydrochloric acid (37wt%), and 10 mL of deionized water, at 100 o C for 120 min, after cooling, the samples were taken out, rinsed with deionized water, and then processed in an oxygen plasma cleaner with an oxygen flow rate of 1 L / min, with a power of 50 W and a processing time of 10 min. Finally, the sample was placed in an oxygen atmosphere with an oxygen flow rate of ...

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Abstract

The invention discloses a preparation method of a three-dimensional dendritic TiO2 array with rapid electronic transmission performance. The preparation method comprises the steps as follows: 1), a one-dimensional nanometer TiO2 rod array with rapid electronic transmission performance is grown on the surface of a conductive substrate deposited with a TiO2 crystal seed layer with a hydrothermal method; 2), the one-dimensional nanometer TiO2 rod array obtained in the step 1) is subjected to surface treatment, and a three-dimensional dendritic structure is grown on a no-seed layer in an epitaxial manner with a water-bath method; and 3), an obtained sample with the three-dimensional dendritic structure is subjected to oxygen plasma cleaning and oxygen atmosphere sintering treatment, so that a three-dimensional dendritic TiO2 array nano-structure is obtained. According to the preparation method, the technological operation is simple, the cost is low, the controllability is high, grain boundaries and defects of the obtained TiO2 array are few, high electrical transmission rate and large specific surface area are provided, the TiO2 array can be used for a photo-anode of an photoelectric device, the device performance is improved greatly, and a good application prospect is provided.

Description

technical field [0001] The invention particularly relates to a method for preparing a three-dimensional dendritic titanium dioxide array with fast electron transport performance, which can be applied to photoanodes of photoelectric devices and belongs to the field of photoelectric semiconductor materials. Background technique [0002] Photoelectric devices, such as solar cells, photocatalysis, photolysis of water to produce hydrogen, etc., can use clean and renewable energy to alleviate the current increasingly serious energy and environmental crises, and thus have attracted the attention of researchers all over the world. Nanostructured oxide semiconductors have been used as photoanodes in optoelectronic devices. Nanostructures have a large specific surface area, which can greatly enhance the capture and collection of electrons. On the other hand, the transport rate of electrons in the electrodes is also an important factor affecting the performance of optoelectronic devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G23/053H01G9/20H01G9/042B82Y30/00B82Y40/00
CPCY02E60/10
Inventor 盛夏封心建
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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