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Method for fabricating film of aluminum zirconate titanate with high orientating (111)

A lead zirconate titanate and orientation technology, which is applied to ceramics and inorganic insulators, can solve the problems of poor repeatability and complicated preparation methods of lead zirconate titanate films

Inactive Publication Date: 2007-10-10
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to solve the problems of complex preparation method and poor repeatability in the process of preparing lead zirconate titanate film by the existing sol-gel method, and to provide a ferroelectric material lead zirconate titanate film crystallization (111 ) crystallization method for preferred orientation growth

Method used

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  • Method for fabricating film of aluminum zirconate titanate with high orientating (111)
  • Method for fabricating film of aluminum zirconate titanate with high orientating (111)
  • Method for fabricating film of aluminum zirconate titanate with high orientating (111)

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specific Embodiment approach 1

[0005] Specific embodiment one: the preparation method of the lead zirconate titanate ferroelectric thin film of a kind of height (111) orientation in the present embodiment is realized through the following steps: one, 0.022 moles of Pb (OOCH 3 ) 2 ·3H 2 O was added to 50ml of ethylene glycol methyl ether, and then 5ml fraction was distilled at 123°C, then the mixed solution was cooled to room temperature, the mixed solution was stirred and zirconium propoxide and tetrabutyl titanate were added successively, zirconium propoxide The sum of the moles of zirconium propoxide and tetrabutyl titanate is 0.02 moles, the molar ratio of zirconium propoxide to tetrabutyl titanate is between 95:5 and 30:70, and then the mixture is heated to boiling for 5 to 15 minutes Cool the mixed solution to room temperature, add ethylene glycol methyl ether to make the volume of the mixed solution reach 50ml, and obtain the PZT precursor sol; 2. Drop the PZT precursor sol onto the Pt(111) / Ti / SiO 2...

specific Embodiment approach 2

[0006] Specific embodiment two: the difference between this embodiment and specific embodiment one is that in step one, 0.022 moles of Pb(OOCH 3 ) 2 ·3H 2 While O is added to 50ml of ethylene glycol methyl ether, 0.0002 to 0.001 mole of rare earth nitrate La(NO 3 ) 3 ·6H 2 O, Nd(NO 3 ) 3 ·6H 2 O, Sm(NO 3 ) 3 ·6H 2 O, Gd(NO 3 ) 3 ·6H 2 O, Eu(NO 3 ) 3 ·6H 2 O or Yb(NO 3 ) 3 ·6H 2 One of O is added to ethylene glycol methyl ether. Other steps are the same as in the first embodiment.

specific Embodiment approach 3

[0007] Specific embodiment 3: The difference between this embodiment and specific embodiment 1 is that in step 2, the wet film is placed on a 360-440° C. flat furnace and heated for 3.5-4.5 minutes. Other steps are the same as in the first embodiment.

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Abstract

This invention discloses a method for preparing highly (111)-oriented PZT thin film. The method can solve the problems of complex process and low repeatability faced by sol-gel method. The method comprises: preparing PZT sol, depositing PZT thin film, pre-crystallizing PZT thin film, and crystallizing PZT thin film. The method is simple. The obtained PZT thin film has compact and smooth surface, uniform thickness, uniform grain sizes, high residual polarization value (43-60 muC / cm2), low coercive field (60-75 kV / cm), and high saturated polarization value.

Description

technical field [0001] The invention relates to a preparation method of lead zirconate titanate film. Background technique [0002] Lead zirconate titanate (Pb(Zr,Ti)O 3 , PZT) is lead titanate (PbTiO 3 ) and lead zirconate (PbZrO 3 ) is a solid solution of ABO 3 Type perovskite phase compound, at room temperature, according to the difference of Zr / Ti, they are tetragonal ferroelectric phase and triangular ferroelectric phase. PZT piezoelectric ceramics have been widely used because of their excellent dielectric, piezoelectric, pyroelectric and ferroelectric properties. In many cases, practical applications require ferroelectrics to be made into films with a thickness of tens of nanometers to tens of microns. In recent years, with the continuous development of film preparation technology, PZT films have attracted widespread attention. It is an excellent The micro-drive and micro-sensing materials in micro-mechanical systems are also a kind of ferroelectric storage mater...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/624C04B35/472C04B35/48H01B3/12
Inventor 王福平孙秋魏兆冬成海涛姜兆华
Owner HARBIN INST OF TECH
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