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Method for preparing tantalum doping tin oxide transparent conductive film

A technology of transparent conductive film and tin oxide, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problem that the tantalum element doped tin oxide transparent conductive film has not yet been discovered, and achieve production efficiency and cost Inexpensive, strong adhesion, excellent photoelectric performance effect

Inactive Publication Date: 2008-09-10
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, there is no report on the preparation of tantalum-doped tin oxide transparent conductive films by magnetron sputtering.

Method used

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  • Method for preparing tantalum doping tin oxide transparent conductive film
  • Method for preparing tantalum doping tin oxide transparent conductive film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] (1) Ta with a purity of 99.99% 2 o 5 and SnO 2 The powder is fully mixed, pressed into a billet under a pressure of 80Mpa, put into a high-temperature sintering furnace and sintered at 1650°C for 3 hours to obtain a tantalum-doped tin oxide sputtering target, in which Ta 2 o 5 The mass percentage (wt.%) is 1%, SnO 2 The mass percentage (wt.%) of the target is 99%, and the size of the target is: diameter 60mm, thickness 6mm;

[0021] (2) The prepared tantalum-doped tin oxide sputtering target is fully cleaned with analytical pure acetone and deionized water, then placed in an oven, and kept at 120°C for 3 hours to remove surface oil and other impurities;

[0022] (3) Use ordinary slide glass as the film substrate material, fully wash it with analytical pure acetone and deionized water before sputtering, then put it in an oven, and keep it warm at 80°C for 2 hours;

[0023] (4) Install and put the target material and glass slide pretreated in (2) and (3) into the mag...

Embodiment 2

[0027] Except that the composition and preparation parameters of the sputtering target are different from those in Example 1: the Ta with a purity of 99.99% 2 o 5 and SnO 2 The powder is fully mixed, pressed into a billet under a pressure of 80Mpa, put into a high-temperature sintering furnace and sintered at 1600°C for 4 hours to obtain a tantalum-doped tin oxide sputtering target, in which Ta 2 o 5 The mass percentage (wt.%) is 5%, SnO 2 The mass percentage (wt.%) of the target is 95%, and the size of the target is 60mm in diameter and 6mm in thickness;

[0028] All the other processing steps are identical with embodiment 1.

[0029] The measurement results show that the thickness of the film is about 120nm, the surface roughness (RMS) is about 4-5nm, and the resistivity of the film is 2.1×10 -3 The average transmittance of the film to visible light exceeds 90%.

Embodiment 3

[0031] Except that the composition and preparation parameters of the sputtering target are different from those in Example 1: the Ta with a purity of 99.99% 2 o 5 and SnO 2 The powder is fully mixed, pressed into a billet under a pressure of 60Mpa, put into a high-temperature sintering furnace and sintered at 1500°C for 5 hours to obtain a tantalum-doped tin oxide sputtering target, in which Ta 2 o 5 The mass percentage (wt.%) is 10%, SnO 2 The mass percentage (wt.%) of the target is 90%, and the size of the target is 60 mm in diameter and 6 mm in thickness.

[0032] All the other processing steps are identical with embodiment 1.

[0033] The measurement results show that the thickness of the film is about 130nm, the surface roughness (RMS) is about 5-6nm, and the resistivity of the film is 7.9×10 -3 The average transmittance of the film to visible light exceeds 86%.

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Abstract

The invention relates to a method for preparing tantalum jewellers putty-doped transparent conductive film. The method is characterized in that Ta2O5 powder and SnO2 powder with 99.99 percent purity quotient are fully mixed according to weight ratio between 1:99 to 10:90, pressed, molded and sintered into a tantalum jewellers putty-doped sputtering target material under the temperature between 1500 DEG C and 1650 DEG C, then a jewellers putty-doped transparent conductive film with different tantalum contents is prepared by a magnetron sputtering method. The prepared film has the characteristics of smooth and compact surface, uniform film thickness, excellent photoelectric performance, simple preparation technology, low cost and easy realization of industrialized production, etc. and also has good mechanical performance, chemical durability, high-temperature thermal stability and biocompatibility. The film can not only be used for a flat-panel dispaly, a solar battery, a transparent electromagnetic shielding and antistatic device but also used for a resistance type touch screen, a biosensor, etc. which have special needs on the toxicity and biocompatibility of the film.

Description

technical field [0001] The invention relates to a method for preparing a tantalum-doped tin oxide transparent conductive film, in particular to a method for preparing a tantalum-doped tin oxide transparent conductive film by using a magnetron sputtering method, which belongs to the technical field of electronic materials. Background technique [0002] The metal oxide transparent conductive film has a high transmittance (> 85%) and a very low resistivity (up to 10 -3 ~10 -4 Ω·cm) and other excellent photoelectric properties, so it has been widely used in the fields of flat panel displays, solar cells, transparent electromagnetic shielding and antistatic devices, resistive touch screens, and biosensors, among which the most used transparent conductive film is tin-doped Indium Tin Oxide (ITO for short) thin film. Although ITO transparent conductive films are widely used in many fields, due to its complex preparation process, poor high temperature stability (there is a prob...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/02C23C14/58C23C14/54
Inventor 张玉勤蒋业华周荣
Owner KUNMING UNIV OF SCI & TECH
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