Nd-doped Bi4Ti3O12 ferroelectric thin film for the ferroelectric memory and its low temperature preparation method

A ferroelectric memory, neodymium bismuth titanate technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, static memory, chemical instruments and methods, etc., can solve the problem of unfavorable compatibility between ferroelectric films and CMOS circuits, preparation of High temperature and narrow ferroelectric film thickness range, to achieve the effects of excellent fatigue resistance, large polarization strength, and wide film thickness range

Inactive Publication Date: 2007-08-15
TSINGHUA UNIV
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  • Abstract
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Problems solved by technology

However, the preparation temperature of the Nd-doped bismuth titanate ferroelectric films reported in these documents is relatively high (generally greater than 750 ° C), which is unfavorable for the com

Method used

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  • Nd-doped Bi4Ti3O12 ferroelectric thin film for the ferroelectric memory and its low temperature preparation method

Examples

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preparation example Construction

[0027] The low-temperature preparation method of the above-mentioned film proposed by the present invention is characterized in that it consists of two parts: preparing Nd-doped bismuth titanate precursor sol and preparing Nd-doped bismuth titanate ferroelectric thin film, including the following steps:

[0028] 1) Preparation of the Nd-doped bismuth titanate precursor sol:

[0029] 11) Dissolving neodymium acetate (commercially available product) in ethanolamine (commercially available product) (ethanolamine is both a solvent and a complexing agent), so that it is completely dissolved into a neodymium acetate solution;

[0030] 12) Dissolve bismuth hexanoate (commercially available product) or bismuth acetate (commercially available product) or bismuth nitrate (commercially available product) in caproic acid (commercially available product) or acetic acid (commercially available product) to make it completely dissolve into caproic acid Bismuth solution or bismuth acetate solu...

Embodiment 1

[0044] The neodymium-doped bismuth titanate Bi of the present embodiment 4-x Nd x Ti 3 o 12 The composition and components of the ferroelectric thin film are: Bi 3.15 Nd 0.85 Ti 3 o 12 , the x in the Nd is 0.85; the Bi in the neodymium-doped bismuth titanate, relative to the composition formula Bi 3.15 Nd 0.85 Ti 3 o 12 The content of Bi should be added in excess, the excess percentage of the Bi element is 20%; the thickness of the film is 20nm.

[0045] The preparation method of this thin film comprises the following steps:

[0046] 1) Preparation of the Nd-doped bismuth titanate precursor sol:

[0047] 11) Dissolving 1.366g neodymium acetate (commercially available product) in 10ml ethanolamine (commercially available product) is mixed with completely dissolved neodymium acetate solution;

[0048] 12) 15.422g bismuth hexanoate (commercially available product) is dissolved in 25ml hexanoic acid (commercially available product) and is made into completely dissolved...

Embodiment 2

[0061] The neodymium-doped bismuth titanate Bi of the present embodiment 4-x Nd x Ti 3 o 12 The composition and components of the ferroelectric thin film are: Bi 3.75 Nd 0.25 Ti 3 o 12 , the x in the Nd is 0.25; the Bi in the neodymium-doped bismuth titanate, relative to the composition formula Bi 3.75 Nd 0.25 Ti 3 o 12 The content of Bi should be added in excess, and the excess percentage of the Bi element is 5%; the thickness of the film is 500nm.

[0062] The preparation method of the neodymium-doped bismuth titanate ferroelectric thin film comprises the following steps:

[0063] 1) Preparation of the Nd-doped bismuth titanate precursor sol:

[0064] 11) Dissolving 0.402g neodymium acetate (commercially available product) in 10ml ethanolamine (commercially available product) is mixed with completely dissolved neodymium acetate solution,

[0065] 12) 13.942g bismuth nitrate (commercially available product) was dissolved in 50ml acetic acid (commercially available...

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Abstract

The chemical formula Bi4-xNdxTi3O12 relates to the 20-500nm Nd-doped bismuth titanate ferro-electricity thin film, wherein, x denotes the mole percent of Nd in total mole number of Nd and Bi, while the surplus content of Bi element takes up of 5-20% as the total mole number of Bi, Nd and Ti. The preparation method comprises preparing predecessor sol and preparing the thin film, respectively. This product has super anti-fatigue property, high Pr value, lower Vc value, and compatible with CMOS technology.

Description

technical field [0001] The invention belongs to the scope of new microelectronic materials and devices, and in particular relates to a neodymium-doped bismuth titanate ferroelectric thin film material and its low-temperature preparation technology. Background technique [0002] With the development of the microelectronics industry, higher and higher requirements are put forward for the memory, such as: high speed, low power consumption, high security and non-volatile. Traditional SRAM, DRAM, E 2 Memories such as PROM and FLASH all use silicon as the storage medium. Due to the limitations of physics and technology, they can no longer meet the further rapid development of the information industry. Therefore, new storage media must be sought and developed. Ferroelectric materials are a kind of dielectric material with spontaneous polarization characteristics, and the spontaneous polarization direction can be reversed with the electric field and can still be maintained when th...

Claims

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Application Information

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IPC IPC(8): H01L27/115H01L21/314H01L21/8247G11C11/22H01B3/02C01G23/00H01L41/39
Inventor 谢丹任天令薛堪豪刘天志张志刚刘理天
Owner TSINGHUA UNIV
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