CoPtx nano composite structure electromagnetic memory device and preparation method thereof

A storage device and nano-composite technology, applied in the direction of static memory, electric solid device, digital memory information, etc., to achieve the effect of reducing randomness, guaranteeing conformity and controllability, and excellent storage performance

Active Publication Date: 2017-05-31
NANJING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The direct application of ALD deposition technology to the prepa

Method used

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  • CoPtx nano composite structure electromagnetic memory device and preparation method thereof
  • CoPtx nano composite structure electromagnetic memory device and preparation method thereof
  • CoPtx nano composite structure electromagnetic memory device and preparation method thereof

Examples

Experimental program
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Example Embodiment

[0038] Example 1

[0039] (1) Using the clean silicon wafer 5 as the substrate, firstly prepare the lower electrode 4 and prepare the lower electrode TiN using plasma enhanced atomic layer deposition. The specific steps are as follows:

[0040] The growth temperature of TiN is 400℃, with TiCl 4 , NH 3 Plasma is used as Ti source and nitrogen source respectively, among which TiCl 4 The pulse time is 0.1 seconds, the carrier gas is high-purity nitrogen (99.999%), and at the same time as the cleaning gas, the cleaning time is 4 seconds; NH 3 The carrier gas of the plasma is high-purity argon (99.999%), the pulse time is 24 seconds, the cleaning time of high-purity nitrogen as the cleaning gas is 6 seconds, and TiCl 4 The source temperature is room temperature. The thickness of TiN in this embodiment is 30 nm;

[0041] (2) Using plasma enhanced atomic layer deposition technology to grow CoPt on the TiN layer of the bottom electrode x Magnetic nanocrystalline layer 3;

[0042] CoPt x The g...

Example Embodiment

[0052] Example 2

[0053] (1) Using a clean silicon wafer as a substrate, firstly prepare the lower electrode TiN by plasma enhanced atomic layer deposition, the thickness of which is 120nm, and the preparation method is the same as step (1) in Example 1;

[0054] (2) Using plasma enhanced atomic layer deposition technology to grow CoPt on the TiN layer of the bottom electrode x The preparation method of the nanocrystal is the same as step (2) in Example 1, the cycle ratio of Co:Pt is 1:1, and the number of cycles is 100 cycles;

[0055] (3) Secondly, a hafnium oxide film is grown to form the resistive layer. The atomic layer deposition process conditions are: the growth temperature is 250 ℃, and tetra-(dimethylethylamino hafnium) and secondary deionized water are used as the Hf source and the oxygen source, respectively. The pulse time of the road source is 0.1 seconds, the carrier gas is high-purity nitrogen (99.999%) and it is used as the cleaning gas at the same time, and the cle...

Example Embodiment

[0062] Example 3

[0063] (1) Using the clean silicon wafer as the substrate, firstly prepare the lower electrode TiN by plasma enhanced atomic layer deposition. The specific steps are as follows:

[0064] The growth temperature of TiN is 400℃, with TiCl 4 , NH 3 Plasma is used as Ti source and nitrogen source respectively, among which TiCl 4 The pulse time is 0.1 seconds, the carrier gas is high-purity nitrogen (99.999%), and at the same time as the cleaning gas, the cleaning time is 4 seconds; NH 3 The carrier gas of the plasma is high-purity argon (99.999%), the pulse time is 24 seconds, the cleaning time of high-purity nitrogen as the cleaning gas is 6 seconds, and TiCl 4 The source temperature is room temperature. The thickness of TiN in this embodiment is 200 nm;

[0065] (2) Using plasma enhanced atomic layer deposition technology to grow CoPt on the TiN layer of the bottom electrode x Nanocrystalline layer

[0066] CoPt x The growth temperature of the nanocrystals is 300 ℃, an...

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Abstract

The invention discloses a CoPtx nano composite structure electromagnetic memory device. The electromagnetic memory device is of a lamination structure, and the lamination is composed of a silicon chip, a lower electrode, a CoPtx magnetic nano crystal layer, a thin oxide film resistive random layer and an upper electrode sequentially from bottom to top. The memory has an excellent resistive random memory function and a magnetic recording characteristic, and can realize a high-density multimode electromagnetic memory function. The invention also discloses a preparation method of the CoPtx nano composite structure electromagnetic memory device, and the method is based on a preparation technique of an atomic layer deposited multifunctional high-density electromagnetic memory device, is well compatible with a microelectronic process, provides feasibility for future industrialization and large-scale application, can guarantee the uniformity, conformality and controllability of the memory device structure, is compatible with the mature semiconductor process, and is convenient for realizing integration of a high-density multifunctional electromagnetic memory device with a microelectronic device and realizing large-scale industrialized application.

Description

technical field [0001] The invention belongs to the field of micro-nano electronic technology-high-density information storage, and relates to a CoPt x Electromagnetic storage device with nanocomposite structure and its preparation method. Background technique [0002] Flash memory based on charge storage mechanism, with the reduction of device size, it is difficult to break through the process bottleneck of the 22nm technology node, and cannot meet the rapid development of the information field. A new type of non-volatile memory device - resistive random access memory (RRAM) came into being. The information reading and writing of resistive memory devices is realized by reading or changing the resistance of resistive materials. Its functional layer has high resistance state and low resistance state, corresponding to two states of "0" and "1". Under the condition of external voltage, the resistive memory device can realize reversible switching between high and low resistanc...

Claims

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Application Information

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IPC IPC(8): G11C11/15H01L27/115
CPCG11C11/15H10B53/00
Inventor 李爱东王来国吴迪
Owner NANJING UNIV
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