Method for preparing bismuth ferric film material

A thin film material, bismuth ferrite technology, applied in metal material coating process, vacuum evaporation coating, coating and other directions, can solve the problems of complex process, high production cost, and high requirements for oxide epitaxial layer equipment, and achieves the preparation method. Simple, low-cost effects

Inactive Publication Date: 2010-03-10
EAST CHINA NORMAL UNIV
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  • Abstract
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Problems solved by technology

The method of using a perovskite structure single crystal substrate is not compatible with silicon-based readout circuit technology, and the method of adding an oxide epitaxial layer requires high equipment requirements, complex processes, and high production costs.

Method used

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  • Method for preparing bismuth ferric film material
  • Method for preparing bismuth ferric film material

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Experimental program
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Embodiment

[0019] a), substrate cleaning and installation

[0020] Using a (100)-oriented single crystal silicon substrate covered with LaNiO grown by chemical solution method 3 Conductive layer, the thickness of the conductive layer is about 100nm. After the substrate is washed with deionized water and absolute ethanol in sequence, it is dried with high-purity nitrogen gas and fixed on the sample tray. Vacuum the system to a vacuum of 10 -4 Pa.

[0021] b), film material preparation

[0022] Heat the substrate (sample) to keep its temperature at 650°C; feed oxygen into the system to keep the oxygen pressure in the system at 1Pa; adjust the distance between the target surface and the sample surface to 5 cm, set the target tray and The sample tray rotates in the opposite direction at a speed of 1.5 rpm; the laser ablates the target for deposition, and the target is a commercially customized bismuth ferrite target with a diameter of 5 cm and a thickness of 1 cm. Wherein the molar conte...

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Abstract

The invention discloses a method for preparing a bismuth ferric film material. The method adopts a pulsed laser deposition technology; a bismuth ferric film is deposited on a silicon substrate coveredby an electrode; and the bismuth ferric film with high remnant polarization is obtained by adjusting process parameter in deposition process and in-situ annealing. The method has the advantages thatthe single-crystal silicon is taken as the substrate material, the remnant polarization of the obtained bismuth ferric film is higher than that of the traditional ferroelectric film, and the bismuth ferric film is an ideal material for silicon-based ferroelectric components such as a ferroelectric memory and the like.

Description

technical field [0001] The invention relates to a growth method of a ferroelectric thin film material, in particular to a method for preparing a bismuth ferrite thin film material based on a pulsed laser deposition method. Background technique [0002] Bismuth ferrite is both ferroelectric and antiferromagnetic at room temperature. It can be used to prepare magnetron electrical state devices or electromagnetism state devices. The remnant polarization of the bismuth ferrite film is 2-3 times that of the widely used ferroelectric material lead zirconate titanate (PZT). If it is used in the capacitance storage unit of the ferroelectric memory, the size of the storage unit can be reduced. Thereby improving the capacity and integration of integrated circuits. However, because high-quality bismuth ferrite thin films are very demanding on the preparation process, only a few workers at home and abroad can use pulsed laser deposition to prepare bismuth ferrite thin films with small...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/28C23C14/06
Inventor 李亚巍褚君浩
Owner EAST CHINA NORMAL UNIV
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