8 results about "Ferrite thin films" patented technology

The invention relates to the technical field of nanometer energy and sensing, in particular to a ferrite film direct current friction nanometer generator and a preparation method and application thereof.The ferrite film direct current friction nanometer generator comprises a positive electrode friction layer and a negative electrode friction layer, the negative electrode friction layer comprises a substrate, a conductive electrode and a functional layer, and the functional layer comprises an MZF film. The positive friction layer comprises copper metal; the functional layer of the negative electrode friction layer and the negative electrode friction layer are arranged in an opposite contact manner through a bearing type structure unit; the chemical formula of the MZF thin film is MnxZn (1-x) FeyOz, the value range of x is 0.5-0.7, the value range of y is 2-3, and the value range of z is 3-4. The MZF thin film in the nano-generator provided by the invention has a polycrystalline structure and a grain boundary interface polarization characteristic, the grain boundary interface polarization is enhanced when the temperature rises, carrier diffusion-drift balance is broken, and diffusion-dominated direct current output is realized.

The application relates to a preparation method of a high-coercivity high-remanence-ratio composite ferrite film material, which comprises the following steps: (1) preparing a BaFe9Al3O 19 ferrite target material;(2) depositing an amorphous BaFe9Al3O 19 ferrite film on an Al2O3 (000l) substrate by a pulse laser deposition method;(3) placing the grown amorphous BaFe9Al3O 19 ferrite film in a muffle furnace to perform annealing, so as to form BaFe2O4 and BaFe9Al3O 19 composite ferrite films.The application prepares a hexagonal ferrite target material with good compactness by solid-phase method and Al ion doping, and selects a pulse laser deposition technology to deposit a film; BaFe2O4 and BaFe9Al3O 19 composite films are formed by controlling the growth conditions of the film, the characteristics of soft and hard magnetic composite are fully exerted, the magnetic performance of the ferrite film is improved, and finally, the composite ferrite film material with the c-axis out-of-plane orientation and the high-coercivity characteristic is prepared.The application has the characteristics that the coercivity is greater than 1.83T, the remanence ratio reaches 93%, and the application has a good application prospect in the fields of self-biased microwave devices and magnetic recording.

The invention provides a rotary spraying preparation method of a ferrite film, and relates to the field of magnetic functional films. The rotary spraying preparation method of the ferrite film comprises the following steps: S1, cleaning a substrate and fixing the substrate on a sample table; s2, equipment parameters of rotary spraying are set, limited seed layer reduction liquid and seed layer oxidation liquid are connected into a nozzle, rotary spraying is carried out on the substrate through atomization, deposition is carried out for 12-60 seconds, and a seed layer with the thickness of 20-60 nm is formed on the surface of the substrate; s3, switching a solution supply program to a limited target functional layer reduction solution and a limited target functional layer oxidation solution, continuously carrying out rotary spraying and deposition for 18-22 minutes, depositing a ferrite film on the seed layer, and cooling to room temperature to obtain a ferrite film with the total film thickness of 0.8 + / -0.1 mu m; according to the rotary spraying method of the ferrite film, the seed layer provides an ideal growth interface for the hard-to-deposit formula ferrite film, the film-forming property of the hard-to-deposit formula ferrite film is remarkably improved, the thickness of the seed layer is smaller than 60 nm, and the thickness of the seed layer is smaller than 10 nm. The potential adverse effect of the seed layer material on the overall physical performance of the ferrite film can be reduced to the maximum extent through interface modification, and it is ensured that the ferrite film shows the intrinsic characteristics.

The application provides a (222) orientation growth nickel-zinc ferrite film low-temperature preparation method, and belongs to the technical field of film preparation.The application is based on the principle of oxidation-reduction reaction, uses a rotary spraying device to uniformly attach an oxidizing solution and a reducing solution on a glass substrate in a certain proportion through an ultrasonic atomization system, forms a continuous and dense ferrite film after a series of chemical reactions, changes the concentration of ferrous chloride in the reducing solution, controls the deposition rate of different crystal surfaces, and then controls the growth orientation of the NiZn ferrite film.The NiZn ferrite film prepared through the above process low-temperature deposition can realize compatibility with a semiconductor process, the orientation gradually grows along the (222) preferred orientation from the (311) orientation of the NiZn ferrite, the microstructure gradually forms obvious triangular grains, so that the film growth is more uniform, and the film quality is significantly improved.

The present application relates to a kind of nitrogen-doped ferrite film and its preparation method and application.The chemical formula of nitrogen-doped ferrite film is: MFe2O 4‑x N y , 0<x≤2, 0<y≤1.5 and 0<2x-3y≤1;Or MFeO 3‑x N y , 0<x≤2, 0<y≤1.5 and 0<2x-3y≤2;Or M3Fe5O 12‑x N y , 0<x≤6, 0<y≤4 and 0<2x-3y≤5;Or MFe 12 O 19‑x N y , 0

The invention discloses a ferrite film parameter characterization clamp and characterization method, the characterization clamp comprises a transduction structure, a 50-ohm feeder line and a terminal matching, the transduction structure is composed of two parallel microstrip transmission lines, one end of each parallel microstrip transmission line is connected to a clamp test interface through the feeder line, and the other end of each parallel microstrip transmission line is connected to the clamp test interface. The other end of the transduction structure is connected with a terminal to be matched or connected to the clamp test interface through a feeder line; and the ferrite film to be tested covers the transduction structure. A vector network analyzer is used for testing to obtain an S parameter of a ferrite film load characterization clamp, and a de-embedding technology is combined to analyze transmission frequency band boundary frequency, phase delay and insertion loss of a two-port coupling structure of the ferrite film load, so as to characterize saturation susceptibility, film thickness and ferromagnetic resonance line width of the ferrite film. According to the method, the characterization clamp is used for characterizing three different key parameters of the ferrite film, so that the parameter characterization cost is remarkably reduced, and the characterization efficiency is greatly improved.

The invention provides a method for preparing a high C-axis orientation barium ferrite film based on a liquid phase epitaxy method. The method comprises the following steps: step 1, preparing a melt: taking BaCO3 and Fe2O3 as raw materials, taking K2CO3, Bi2O3 and B2O3 as fluxing agents, weighing the raw materials and the fluxing agents, and mixing and melting the raw materials and the fluxing agents to obtain the uniformly mixed melt; step 2, growing a thin film by a liquid phase epitaxy method: cooling to 850-900 DEG C, cooling a clamp with a substrate to a position above a melt after the temperature of the melt is stable, preheating, then cooling to be in contact with the liquid level of the melt, and applying a magnetic field to grow the thin film, the substrate being MgO (111); step 3, taking out the thin film: taking out the thin film after growth is finished, and cleaning the thin film; and step 4, processing the thin film: cutting, grinding, polishing and cleaning the cleaned thin film to obtain the high C-axis orientation barium ferrite thin film. The preparation of the high-C-axis orientation BaM film is realized by adopting an external magnetic field assistance mode, so that the magnetic performance of the film is remarkably improved.