17 results about "Ferrite thin films" patented technology

Described is an intrinsically multiplexed magnetostatic surface wave (MSSW) device comprising of a pair of transducers that couple to one or more plurality of ferrite films. In embodiments, the ferrite films may be provided as one or more of a YIG, Nickle Zinc Ferrite, Lithium Ferrite configured to simultaneously provide the MSSW device having an associated plurality of MSSW operational bandwidths. The concepts, structure and technique described herein may be used to provide broadband magnetostatic surface wave devices that employ intrinsic multiplexing techniques which enable customizable frequency responses over broad bandwidths.

The invention relates to the technical field of nanometer energy and sensing, in particular to a ferrite film direct current friction nanometer generator and a preparation method and application thereof.The ferrite film direct current friction nanometer generator comprises a positive electrode friction layer and a negative electrode friction layer, the negative electrode friction layer comprises a substrate, a conductive electrode and a functional layer, and the functional layer comprises an MZF film. The positive friction layer comprises copper metal; the functional layer of the negative electrode friction layer and the negative electrode friction layer are arranged in an opposite contact manner through a bearing type structure unit; the chemical formula of the MZF thin film is MnxZn (1-x) FeyOz, the value range of x is 0.5-0.7, the value range of y is 2-3, and the value range of z is 3-4. The MZF thin film in the nano-generator provided by the invention has a polycrystalline structure and a grain boundary interface polarization characteristic, the grain boundary interface polarization is enhanced when the temperature rises, carrier diffusion-drift balance is broken, and diffusion-dominated direct current output is realized.

The present invention discloses a multi-physics numerical calculation method for an on-chip device loaded with a ferrite thin film, belonging to the fields of integrated circuit technology and computational electromagnetics. First, a hybrid grid meshing is performed on the on-chip device loaded with the ferrite thin film; then, each field component of the three physical fields is arranged in the discrete space; finally, according to the coupling relationship of the three physical fields, the physical field equations are solved and the parameter transfer between the equations is carried out. According to the structural characteristics of the on-chip device, the present invention combines two grid encryption technologies in the conventional FDTD space, significantly improving the modeling accuracy; according to the multi-physics phenomena faced by the on-chip device, on the basis of solving the Maxwell equation by FDTD, the LLG equation and the heat conduction equation are coupled and calculated, and reasonable parameter transfer is carried out, completely restoring the electromagnetic field phenomena, the magnetization and demagnetization processes of the ferrite thin film and their thermal effects when the on-chip device is working, and effectively improving the simulation accuracy of the calculation method for the target.

The utility model discloses a U-shaped bending-resistant anti-attenuation coaxial cable, which comprises a polyester staple fiber buffer core material, and a plurality of tinned copper wire mesh conductor layers formed on the outer surface of the polyester staple fiber buffer core material by weaving and pressing a plurality of tinned copper monofilaments with the wire diameter not more than 0.18 mm. A PFA extruded inner insulating layer, an ETFE wrapping outer insulating layer, a copper wire winding inner shielding layer, a ferrite film wrapping layer, an irradiation crosslinking high-density polyethylene inner sheath layer, a copper wire winding outer shielding layer and an irradiation crosslinking high-density polyethylene outer sheath layer are sequentially wrapped outside the tinned copper net conductor layer. The copper-wire-wound inner shielding layer and the copper-wire-wound outer shielding layer are both formed by spirally winding a plurality of fan-shaped silver-plated copper wires side by side. The cable has better U-shaped bending resistance, the conductors are not easy to break, the mechanical strength of the shielding layer is high, the bending torsion resistance is better, the reduction of signal attenuation is facilitated, the shielding performance is stable, and the durability is better.

The utility model discloses an anti-oxidation low-loss leaky coaxial cable, which comprises a copper pipe conductor, an EVA (Ethylene Vinyl Acetate) water-blocking inner bonding layer, a foamed polyethylene inner insulating layer, a ferrite film inner cushion layer, an EVA water-blocking middle bonding layer, a copper strip longitudinal wrapping shielding layer, a copper zinc alloy electroplated layer, an EVA water-blocking outer bonding layer and an irradiation crosslinking high-density polyethylene sheath layer, the thickness of the foamed polyethylene inner insulating layer is not less than 6mm, the outer surface of the copper strip longitudinally-wrapped shielding layer is electroplated to form a copper-zinc alloy electroplated layer, a plurality of rectangular leakage slotted holes are formed in the copper strip longitudinally-wrapped shielding layer in the axial direction, the length of each rectangular leakage slotted hole is not less than 30mm, and the width of each rectangular leakage slotted hole is 60%-90% of the perimeter of the copper strip longitudinally-wrapped shielding layer. And the distance between the rectangular leakage slotted holes is not less than 50mm. The cable effectively inhibits the oxidation of the outer conductor, prevents the deterioration, optimizes the slotting size and structure of the leakage slotted hole, reduces the loss attenuation, and effectively reduces the radiation interference.

The application relates to a preparation method of a high-coercivity high-remanence-ratio composite ferrite film material, which comprises the following steps: (1) preparing a BaFe9Al3O 19 ferrite target material;(2) depositing an amorphous BaFe9Al3O 19 ferrite film on an Al2O3 (000l) substrate by a pulse laser deposition method;(3) placing the grown amorphous BaFe9Al3O 19 ferrite film in a muffle furnace to perform annealing, so as to form BaFe2O4 and BaFe9Al3O 19 composite ferrite films.The application prepares a hexagonal ferrite target material with good compactness by solid-phase method and Al ion doping, and selects a pulse laser deposition technology to deposit a film; BaFe2O4 and BaFe9Al3O 19 composite films are formed by controlling the growth conditions of the film, the characteristics of soft and hard magnetic composite are fully exerted, the magnetic performance of the ferrite film is improved, and finally, the composite ferrite film material with the c-axis out-of-plane orientation and the high-coercivity characteristic is prepared.The application has the characteristics that the coercivity is greater than 1.83T, the remanence ratio reaches 93%, and the application has a good application prospect in the fields of self-biased microwave devices and magnetic recording.

The invention discloses a dual-band photoelectric detection manganese zinc ferrite vertical field effect transistor and a preparation method thereof. The dual-band photoelectric detection manganese zinc ferrite vertical field effect transistor comprises a substrate, a gate oxide layer and a first channel which are sequentially stacked from bottom to top, a second channel is arranged between the source electrode and the first channel; a drain electrode and a grid electrode are arranged on opposite sides of the source electrode; the first channel is a graphene film, and the second channel is a manganese zinc ferrite film; the first channel and the second channel form a heterojunction; the invention is characterized in that the manganese zinc ferrite film is introduced, and the film has a photoelectric detection function in visible light and ultraviolet light wavebands by adjusting the components and formula of the film. Meanwhile, performance regulation and control can be realized by various means: through coupling with the graphene film, the light-dark current ratio of the transistor can be improved; the photoelectric detection performance of the transistor can be regulated and controlled by regulating and controlling the size and the direction of the external magnetic field.

The invention provides a rotary spraying preparation method of a ferrite film, and relates to the field of magnetic functional films. The rotary spraying preparation method of the ferrite film comprises the following steps: S1, cleaning a substrate and fixing the substrate on a sample table; s2, equipment parameters of rotary spraying are set, limited seed layer reduction liquid and seed layer oxidation liquid are connected into a nozzle, rotary spraying is carried out on the substrate through atomization, deposition is carried out for 12-60 seconds, and a seed layer with the thickness of 20-60 nm is formed on the surface of the substrate; s3, switching a solution supply program to a limited target functional layer reduction solution and a limited target functional layer oxidation solution, continuously carrying out rotary spraying and deposition for 18-22 minutes, depositing a ferrite film on the seed layer, and cooling to room temperature to obtain a ferrite film with the total film thickness of 0.8 + / -0.1 mu m; according to the rotary spraying method of the ferrite film, the seed layer provides an ideal growth interface for the hard-to-deposit formula ferrite film, the film-forming property of the hard-to-deposit formula ferrite film is remarkably improved, the thickness of the seed layer is smaller than 60 nm, and the thickness of the seed layer is smaller than 10 nm. The potential adverse effect of the seed layer material on the overall physical performance of the ferrite film can be reduced to the maximum extent through interface modification, and it is ensured that the ferrite film shows the intrinsic characteristics.

The utility model discloses a torsion-resistant attenuation-resistant coaxial cable, which is characterized in that a silver-plated copper net conductor layer is formed on the outer surface of a stainless steel monofilament conductor by weaving and pressing a plurality of silver-plated copper monofilaments with the wire diameter not less than 0.2 mm; an FEP extruded inner insulating layer, a PTFE lapped outer insulating layer, a copper wire wound inner shielding layer, a copper wire wound outer shielding layer, a ferrite film inner cushion layer and a PFA extruded sheath layer are sequentially wrapped outside the copper net conductor layer, and a plurality of inner-layer fan-shaped silver-plated copper wires are spirally wound outside the PTFE lapped outer insulating layer side by side to form the copper wire wound inner shielding layer. A plurality of outer-layer fan-shaped silver-plated copper wires are spirally wound outside the copper wire winding inner shielding layer side by side to form a copper wire winding outer shielding layer, and the outer diameter of the PFA extruded sheath layer is 4.6 mm to 5 mm. The shielding layer of the coaxial cable is better in torsion resistance, not easy to break, favorable for reducing signal attenuation, stable in shielding performance and durable in application.

The application provides a (222) orientation growth nickel-zinc ferrite film low-temperature preparation method, and belongs to the technical field of film preparation.The application is based on the principle of oxidation-reduction reaction, uses a rotary spraying device to uniformly attach an oxidizing solution and a reducing solution on a glass substrate in a certain proportion through an ultrasonic atomization system, forms a continuous and dense ferrite film after a series of chemical reactions, changes the concentration of ferrous chloride in the reducing solution, controls the deposition rate of different crystal surfaces, and then controls the growth orientation of the NiZn ferrite film.The NiZn ferrite film prepared through the above process low-temperature deposition can realize compatibility with a semiconductor process, the orientation gradually grows along the (222) preferred orientation from the (311) orientation of the NiZn ferrite, the microstructure gradually forms obvious triangular grains, so that the film growth is more uniform, and the film quality is significantly improved.

Described is an intrinsically multiplexed magnetostatic surface wave (MSSW) device comprising of a pair of transducers that couple to one or more plurality of ferrite films. In embodiments, the ferrite films may be provided as one or more of a YIG, Nickle Zinc Ferrite, Lithium Ferrite configured to simultaneously provide the MSSW device having an associated plurality of MSSW operational bandwidths. The concepts, structure and technique described herein may be used to provide broadband magnetostatic surface wave devices that employ intrinsic multiplexing techniques which enable customizable frequency responses over broad bandwidths.

The utility model discloses a small-diameter anti-attenuation miniature coaxial cable, which comprises a stainless steel monofilament conductor, and a silver-plated copper net conductor layer formed by weaving and pressing a plurality of silver-plated copper monofilaments with the wire diameter of 0.01-0.02 mm on the outer surface of the stainless steel monofilament conductor. A PFA insulating layer, a fan-shaped silver-plated copper wire winding inner shielding layer, a tin-plated outer shielding layer, a ferrite film inner cushion layer and a PFA extruded sheath layer are sequentially coated outside the copper net conductor layer, the fan-shaped silver-plated copper wire winding inner shielding layer is of a structure in which a plurality of fan-shaped silver-plated copper wires are spirally wound side by side, the outer diameter of the PFA insulating layer is 0.4 mm to 0.45 mm, and the outer diameter of the PFA extruded sheath layer is 0.8 mm to 0.85 mm. The miniature coaxial cable is better in bending resistance, good in attenuation resistance, higher in external electromagnetic interference resistance and better in durability, and the conductor and the shielding layer are not prone to wire breakage.

The present application relates to a kind of nitrogen-doped ferrite film and its preparation method and application.The chemical formula of nitrogen-doped ferrite film is: MFe2O 4‑x N y , 0<x≤2, 0<y≤1.5 and 0<2x-3y≤1;Or MFeO 3‑x N y , 0<x≤2, 0<y≤1.5 and 0<2x-3y≤2;Or M3Fe5O 12‑x N y , 0<x≤6, 0<y≤4 and 0<2x-3y≤5;Or MFe 12 O 19‑x N y , 0

An integrated magnetostatic wave device disclosed by the present invention comprises a ferrite film, a permanent magnet assembly and a planar modulation coil, the permanent magnet assembly is used for providing a static bias magnetic field for the ferrite film, the planar modulation coil is used for providing a regulation magnetic field for the ferrite film, and the ferrite film is used for excitation and transmission of magnetostatic waves. A regulation and control magnetic field generated by the planar modulation coil and a static bias magnetic field generated by the permanent magnet assembly are superposed and jointly act on the ferrite film. According to the invention, the permanent magnet is adopted to provide a static saturation bias magnetic field required when the ferrite film works, additional energy supply is not needed, the power consumption and cost of the device are greatly reduced, the planar coil is adopted to realize magnetic regulation and control of the static magnetic wave device, the integration level of the device is effectively improved, and the cost of the device is reduced.

The invention discloses a ferrite film parameter characterization clamp and characterization method, the characterization clamp comprises a transduction structure, a 50-ohm feeder line and a terminal matching, the transduction structure is composed of two parallel microstrip transmission lines, one end of each parallel microstrip transmission line is connected to a clamp test interface through the feeder line, and the other end of each parallel microstrip transmission line is connected to the clamp test interface. The other end of the transduction structure is connected with a terminal to be matched or connected to the clamp test interface through a feeder line; and the ferrite film to be tested covers the transduction structure. A vector network analyzer is used for testing to obtain an S parameter of a ferrite film load characterization clamp, and a de-embedding technology is combined to analyze transmission frequency band boundary frequency, phase delay and insertion loss of a two-port coupling structure of the ferrite film load, so as to characterize saturation susceptibility, film thickness and ferromagnetic resonance line width of the ferrite film. According to the method, the characterization clamp is used for characterizing three different key parameters of the ferrite film, so that the parameter characterization cost is remarkably reduced, and the characterization efficiency is greatly improved.

The invention provides a method for preparing a high C-axis orientation barium ferrite film based on a liquid phase epitaxy method. The method comprises the following steps: step 1, preparing a melt: taking BaCO3 and Fe2O3 as raw materials, taking K2CO3, Bi2O3 and B2O3 as fluxing agents, weighing the raw materials and the fluxing agents, and mixing and melting the raw materials and the fluxing agents to obtain the uniformly mixed melt; step 2, growing a thin film by a liquid phase epitaxy method: cooling to 850-900 DEG C, cooling a clamp with a substrate to a position above a melt after the temperature of the melt is stable, preheating, then cooling to be in contact with the liquid level of the melt, and applying a magnetic field to grow the thin film, the substrate being MgO (111); step 3, taking out the thin film: taking out the thin film after growth is finished, and cleaning the thin film; and step 4, processing the thin film: cutting, grinding, polishing and cleaning the cleaned thin film to obtain the high C-axis orientation barium ferrite thin film. The preparation of the high-C-axis orientation BaM film is realized by adopting an external magnetic field assistance mode, so that the magnetic performance of the film is remarkably improved.