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Preparation method for NiZn ferrite film

A ferrite film and ferrite technology, which is applied in the field of low-temperature deposition of NiZn ferrite film preparation, can solve the problems of incompatibility of semiconductor processes, achieve good crystallization performance, increase the cut-off frequency, and improve the effect of fr

Active Publication Date: 2019-06-07
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
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Problems solved by technology

[0007] The present invention mainly aims at the problem that subsequent high-temperature annealing treatment is required for the preparation of NiZn ferrite thin film by the existing magnetron sputtering method, which leads to the incompatibility with the semiconductor process, and provides a simple preparation process, low deposition temperature and excellent film performance. Preparation method of NiZn ferrite film

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  • Preparation method for NiZn ferrite film
  • Preparation method for NiZn ferrite film
  • Preparation method for NiZn ferrite film

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Embodiment 1～4

[0037] A kind of preparation method of NiZn ferrite film, specifically comprises the following steps:

[0038] Step 1, depositing a NiZn ferrite seed layer on the substrate by a spin spraying method;

[0039] 1.1 FeCl 2 、NiCl 2 and ZnCl 2 Add 100mL deionized water to prepare a reducing solution; wherein, FeCl 2 The concentration is 1.51g / L, NiCl 2 The concentration is 0.26g / L, ZnCl 2 The concentration is 0.09g / L;

[0040] 1.2 Add sodium nitrite and sodium acetate into 100mL of deionized water, and mix well to obtain an oxidizing solution; wherein, the concentration of sodium nitrite is 0.15g / L, and the concentration of sodium acetate is 1.34g / L;

[0041] 1.3 Using an ultrasonic atomization system, deposit a NiZn ferrite seed layer on a glass substrate: first, atomize the reducing solution obtained in step 1.1 and the oxidizing solution obtained in step 1.2 into droplets with a particle size of 38 μm; then, The reducing solution and the oxidizing solution are respectivel...

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Abstract

The invention discloses a preparation method for a NiZn ferrite film, and belongs to the technical field of film preparation. According to the method, firstly, a rotary spraying method is adopted to prepare a NiZn ferrite seed layer on a glass substrate, and then a radio frequency magnetic controlled sputtering method is adopted to deposit the NiZn ferrite film on the seed layer. The NiZn ferritefilm prepared by the preparation method does not need the follow-up high temperature annealing processing, the problem of the incompatibility of the ferrite film with a semiconductor process in the follow-up device application is solved, meanwhile, through the inducing of the NiZn seed layer prepared by the rotary spraying method, at the low temperature condition, the NiZn film prepared by the radio frequency magnetic controlled sputtering method has better crystallization properties, and the saturated magnetization strength 4piMs (no less than 5900 Gs), the starting magnetic conductivity of mui (no less than 200) and the cut-off frequency fr ( no less than 1.85 GHz) are significantly increased.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation, and in particular relates to a method for preparing a NiZn ferrite thin film deposited at low temperature. Background technique [0002] In recent years, with the rapid development of electronic products, electronic components are constantly developing in the direction of miniaturization, even thin film, high performance and ultra-high frequency. Micromagnetic devices involving information storage and conversion urgently need to work at 1-2GHz range of high-performance magnetic materials. NiZn ferrite material has high resistivity ρ, high Curie temperature T c , excellent high-frequency microwave magnetic properties and stable chemical properties, etc., are widely used in the fields of high-frequency inductance cores, anti-electromagnetic interference, magnetic recording, sensors, transformers and microwave absorption; but NiZn ferrite saturation magnetization The strength is low,...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/34C23C14/35C23C18/12C23C28/04
Inventor 孙科闫妍郭荣迪余忠蒋晓娜兰中文邬传健
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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