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Method for preparing piezoelectric-ferroelectric thin film

A ferroelectric thin film and piezoelectric technology, applied in the field of piezoelectric ferroelectric thin film preparation, can solve the problems of high cost and slow deposition speed, and achieve strong applicability, highly preferred orientation grain size, and strong program controllability. Effect

Inactive Publication Date: 2010-11-17
SHANGHAI JIAO TONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The thin film prepared by sputtering has good epitaxy, compact structure and good electrical properties, but the deposition speed is slow (3 microns).

Method used

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  • Method for preparing piezoelectric-ferroelectric thin film
  • Method for preparing piezoelectric-ferroelectric thin film
  • Method for preparing piezoelectric-ferroelectric thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The first step is to prepare 80ml of PZT (PbZr 0.53 Ti 0.47 o 3 ) precursor solution: Weigh 17.449 grams (0.046mol) of lead acetate trihydrate crystals, add 50ml of ethylene glycol methyl ether, heat to make it completely dissolved, and then reflux at 120°C for one hour; take 6.475ml (0.019mol ) of pure tetrabutyl titanate, add 50ml ethylene glycol methyl ether and 6ml acetylacetone, and place it at 80°C for 20 minutes under the condition of ultrasonic vibration to make it evenly mixed; weigh 9.101 grams (0.021mol) of zirconium nitrate , was added to the above solution, and stirred uniformly for 5 minutes; the mixed solution was placed at 80°C and ultrasonically oscillated for 20 minutes to make it evenly mixed; the above two solutions were mixed; the mixed solution was placed at 80°C, ultrasonically Place it under shaking conditions for 30 minutes to make it evenly mixed; then use acetic acid to titrate to make the pH value 2.8; stir the above solution at 80°C, the s...

Embodiment 2

[0035] Prepare 80ml of PZT (PbZr 0.53 Ti 0.47 o 3 ) precursor solution: Weigh 24.429 grams (0.064mol) of lead acetate trihydrate crystals, add 50ml of ethylene glycol methyl ether, heat to make it completely dissolved, and then reflux at 120°C for one hour; take 9.066ml (0.026mol ) of pure tetrabutyl titanate, add 50ml of ethylene glycol methyl ether and 6ml of acetylacetone, and place it at 80°C for 20 minutes under the condition of ultrasonic vibration to make it evenly mixed; weigh 12.742 grams (0.030mol) of zirconium nitrate , added to the above solution, and stirred evenly for 5 minutes; the molar concentration ratio of metal ions in the precursor solution is Pb:Zr:Ti=1.15 / 0.53 / 0.47; the mixed solution was placed at 80°C and ultrasonically oscillated for 20 minutes , to make it evenly mixed; use CH 3 COOH titration, so that the pH value is 2.7; the stirring speed is 260 rpm, and the stirring time is 6 hours; the natural aging time is 60 hours; the rest are the same as ...

Embodiment 3

[0037] Prepare 80ml of PZT (PbZr 0.3 Ti 0.7 o 3 ) precursor solution: Weigh 17.449 grams (0.046mol) of lead acetate trihydrate crystals, add 50ml of ethylene glycol methyl ether, heat to make it completely dissolved, and then reflux at 120°C for one hour; take 9.644ml (0.028mol ) of pure tetrabutyl titanate, add 50ml of ethylene glycol methyl ether and 6ml of acetylacetone, and place it at 80°C for 20 minutes under the condition of ultrasonic vibration to make it evenly mixed; weigh 5.151 grams (0.012mol) of zirconium nitrate , added to the above solution, and stirred evenly for 5 minutes; the molar concentration ratio of metal ions in the precursor solution is Pb:Zr:Ti=1.15 / 0.3 / 0.7; the mixed solution was placed at 80°C and ultrasonically oscillated for 20 minutes , make it evenly mix; All the other are with embodiment one. 3 micron thick PbZr can be obtained 0.3 Ti 0.7 o 3 Ferroelectric thin film, wherein the seed layer prepared by PLD is about 0.5 micron. After measu...

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Abstract

The invention provides a method for preparing a piezoelectric-ferroelectric thin film, relating to the technical field of preparation of lead zirconate titanate ceramics and being realized by the steps of preparing a precursor solution, utilizing a PLD method to prepare a substrate and adopting a Sol-Gel method to prepare the piezoelectric-ferroelectric thin film on a PZT crystal seed layer. The invention utilizes a method combing PLD and Sol-Gel to prepare a PZT thick film, thus having strong applicability to different substrates; and the prepared PZT thick film has the obvious advantages of high preferred orientation, even crystal size and compact structure, and can be used for preparing a lead zirconate titanate thin film with the thickness of 3-6 microns, the residual polarization value Pr of 25-45 mu C / cm<2> and the coercive field Ec of 40-65 kV / cm. At the same time, the method in the invention has relative low cost, strong controllability of programs and high industrialized application value.

Description

technical field [0001] The invention relates to a method in the technical field of preparing lead zirconate titanate series ceramics, in particular to a method for preparing a piezoelectric ferroelectric thin film. Background technique [0002] Lead zirconate titanate (PbZr x Ti 1-x o 3 , referred to as PZT) thin film has a perovskite structure, because of its excellent dielectric, ferroelectric and piezoelectric properties, it has been widely used in microelectronics technology. In actual engineering applications, different purposes have different requirements for the thickness of the film: when used as a capacitor to make a non-volatile dynamic random access memory (FRAM), the film thickness is required to be less than 0.2 microns to reduce the switching voltage; as a piezoelectric When making micro-electromechanical systems (MEMS) from materials, in order to obtain sufficient sensing sensitivity or greater driving force, the thin film is required to have a relatively l...

Claims

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Application Information

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IPC IPC(8): C04B35/472C04B35/622
Inventor 郑慈航唐刚刘景全李倩倩尹桂林余震何丹农
Owner SHANGHAI JIAO TONG UNIV
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