Method for representing nano film micro-area deformation area by virtue of combination of photetching technique and transmitted electron microtechnique

Abstract

The invention provides a method for representing a nano film micro-area deformation area by virtue of combination of a photetching technique and a transmitted electron microtechnique and belongs to the field of film nanoindentation representation. The invention discloses a method for representing a 10-100 nano film microarea deformation area by virtue of combination of a photetching technique and a transmitted electron microtechnique. According to the method, an indentated film is directly transferred into a transmission electron microscope so as to be observed by virtue of a film transfer technology; the microdefect formation, interaction and evolutionary process during a nano film elastoplasticity transition process in a nanoindentation acting process is directly disclosed from the aspect of atom scale; the direct relation between microstructure and macromechanic performance is disclosed; and the method belongs to a film nanoindentation representation method.

Description

Technical field: [0001] The invention discloses a method for jointly characterizing the deformation of 10-100 nanometer film micro-regions by photolithography technology and transmission electron microscopy technology. Through the film transfer technology, the indented film is directly transferred to the transmission electron microscope for observation, and it can be observed from the atomic scale. It directly reveals the formation, interaction and evolution process of micro-defects in the elastic-plastic transition process of nano-film during nano-indentation, reveals the direct relationship between micro-structure and macro-mechanical properties, and belongs to the film nano-indentation characterization method. Background technique: [0002] The development of semiconductor devices or micro-nano electromechanical systems (MEMS) to high-density, high-speed and flexible devices requires the development of the important structural unit - metal thin film interconnection line to...

AI Technical Summary

Problems solved by technology

[0006] Aiming at the problems existing in the prior art, the present invention provides a method for jointly characterizing the deformation of nano-film micro-regions by photolithography technology and high-resolution transmission electron microscope technology. This method develops a nano-film transfer technology that can deform nano-indentations The area is directly transferred to a high-resolution transmission electron microscope for quasi-in-situ observation. This method can make full use of the advantages of the large-angle biaxial tilting of the commercial TEM sample rod, and directly go deep into the atomic scale to study the thickness of the thin film below 10-100 nanometers. The correlation between the mechanical properties of the indentation and the microstructure can be used to study the elastic-plastic deformation mechanism of the film under different stresses under the nano-indenter, the characteristics of defects, and the configuration and interaction of dislocations at atomic resolution; It can study the different stages of stress-indentation depth in the process of nano-indentation, the contact mechanical properties and damage mechanism of nano-films, and develop a reasonable and reliable nano-indentation characterization method for nano-films below 100 nanometers

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