BiFe1-yMnyO3 epitaxial composite film and preparation method thereof

A composite thin film and thin film technology, which is applied in the field of microelectronics, can solve problems such as the widening of the coercive electric field distribution and the inability to completely solve the aging problem of the film, and achieve the effect of high remanent polarization and good practical prospects

Inactive Publication Date: 2012-09-19
闫静
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the films involved are polycrystalline randomly oriented films grown by non-epitaxial methods, and the inhomogeneity of grain orientation and size in polycrystalline films will cause the distribution of the coercive electric field to widen, making it difficult for the domains in the film to uniformly polarized
The charged defects at a large number of grain boundaries in the polycrystalline film will also make the aging problem of the film unable to be completely solved.

Method used

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  • BiFe1-yMnyO3 epitaxial composite film and preparation method thereof
  • BiFe1-yMnyO3 epitaxial composite film and preparation method thereof
  • BiFe1-yMnyO3 epitaxial composite film and preparation method thereof

Examples

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Embodiment 1

[0032] BiFe 1-y mn y o 3 The main layer of the epitaxial composite film is BiFe 0.95 mn 0.05 o 3 (BFMO 0.05 ) film, the transition layer is Bi 3.5 Nd 0.5 Ti 3 o 12 (BNTO 0.5 ), the electrode layer is LaNiO 3 Thin film, thin film preparation steps are as follows:

[0033] 1. LaNiO 3 Preparation of thin film: adopt chemical solution method, weigh lanthanum nitrate and nickel nitrate according to stoichiometric ratio and dissolve in ethylene glycol, prepare precursor solution according to conventional method, and prepare a solution with a concentration of 0.2mol / L, adopt layer by layer In the rapid annealing process, the precursor solution is first deposited on the Si substrate by the spin coating method, and then the material is placed on a hot plate for drying, and the dried film is pretreated in a rapid annealing furnace, and the pretreatment temperature is 450 ℃, the time is 5 minutes; the heat treatment temperature is 750 ℃, and the annealing time of each layer ...

Embodiment 2

[0038] BiFe deposited on Si substrate in the present invention 1-y mn y o 3 Epitaxial composite film whose main layer is BFMO 0.05 Thin film, transition layer is BNTO 0.5 , the electrode layer is LaNiO 3 film.

[0039] except BNTO 0.5 The final thickness of the film is 50nm, other preparation method Example 1.

Embodiment 3

[0041] BiFe deposited on Si substrate in the present invention 1-y mn y o3 Epitaxial composite film whose main layer is BFMO 0.05 Thin film, the transition layer is Bi 3.25 La 0.75 Ti 3 o 12 , the electrode layer is LaNiO 3 film.

[0042] The film preparation method is as follows:

[0043] 1. LaNiO 3 Preparation of film: same as Example 1.

[0044] 2. Bi 3.25 La 0.75 Ti 3 o 12 Preparation of the thin film: adopt the chemical solution method, respectively weigh bismuth nitrate and lanthanum nitrate with a molar ratio of 3.575: 0.5, dissolve them in 30 ml of ethylene glycol, and use the molar ratio of bismuth: lanthanum: titanium as 3.575: 0.5:3 Measure tetrabutyl titanate by converting it into the corresponding volume, complex tetrabutyl titanate and acetylacetone according to the volume ratio of 1:1 and stir them evenly, then mix them together to prepare 0.10 mol / L Precursor solution, the precursor solution was deposited on LNO(100) / Si by spin coating method, and...

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Abstract

The invention discloses a BiFe1-yMnyO3 epitaxial composite film. The BiFe1-yMnyO3 epitaxial composite film comprises a (100)-orientation LaNiO3 electrode layer, a (001)-orientation Bi4-xLnxTi3O12 transition layer and a (100)-orientation BiFe1-yMnyO3 main body layer in sequence from bottom to top, wherein Ln is lanthanide, x is molar equivalent of the lanthanide and greater than 0 and less than I, y is molar equivalent of Mn and greater than 0 and less than or equal to 0.05. The invention also discloses a preparation method of the BiFe1-yMnyO3 epitaxial composite film. The preparation method combines a chemical solution method with a rapid annealing process by layers, and adopts an epitaxial growth method for preparing the composite film. The prepared composite film consists of three layers, wherein a good epitaxial relationship exists between layers which are both in an epitaxial growth form. The composite film has the advantages of aging prevention, leakage reactance, and high residual polarization (-80 mu C / cm<2>), thus having a good practical prospect in the future ferroelectric and piezoelectric film devices.

Description

technical field [0001] The present invention relates to a kind of BiFe 1-y mn y o 3 Base composite thin film and preparation method thereof, in particular to a kind of BiFe used in ferroelectric and piezoelectric thin film devices 1-y mn y o 3 The epitaxial composite thin film and its preparation method belong to the technical field of microelectronics. Background technique [0002] BiFeO 3 The material has a simple perovskite structure and has two structural orders at room temperature, that is, ferroelectric order (T C ~830℃) and G-type ferromagnetic ordering (T N ~370°C), it is one of the few ferroelectric materials with both ferroelectricity and ferromagnetism at room temperature. Recently, researchers have confirmed that BiFeO 3 The -based ferroelectric thin film has good ferroelectric and piezoelectric properties, and is expected to be used in memory devices and piezoelectric devices. Although BiFeO prepared by chemical solution method 3 -The leakage current ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/18H01L41/22C04B41/52H01L41/27
Inventor 闫静
Owner 闫静
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