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a bi 6 ti 3 fe 2 o 18 Layered multiferroic epitaxial thin film and its preparation method

A bi6ti3fe2o18, epitaxial thin film technology, applied in the field of new material preparation, can solve the problems of complex chemical composition of multiferroic thin films, easy generation of impurity phases and complex chemical composition in the preparation process, and achieve excellent room temperature ferroelectric properties, good epitaxial properties, crystallization high quality effects

Active Publication Date: 2019-09-13
江苏先进无机材料研究院
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Problems solved by technology

The chemical composition of this kind of multiferroic thin film materials is relatively complex, and most of them are prepared by wet chemical methods that are easy to control the film composition. Major and other issues
For Bi with m=5 6 Ti 3 Fe 2 o 18 In terms of materials, there have been reports on the structural properties of thin film materials (W.Bai, J.H.Chu, Thin Solid Films, 525, 195 (2012), Z.Liu, Y.P. Sun, Applied Physics Letters, 101, 122402 (2012) ), Y.Yun, Yalin Lu, Applied Physics Express, 8, 054001(2015)), found that it has great development potential in multiferroic properties, but Bi 6 Ti 3 Fe 2 o 18 The chemical composition of multiferroic thin films is relatively complex, and impurities are likely to be generated during the preparation process. So far, there are no articles on Bi 6 Ti 3 Fe 2 o 18 The room temperature ferroelectric and ferromagnetic properties of pure phase thin films are reported, and thin films are the main channel for the final application of multiferroic materials, so how to obtain Bi with good ferroelectric properties and magnetic properties 6 Ti 3 Fe 2 o 18 High-quality multiferroic thin films are an urgent problem to be solved at present, and it is of great significance for the application and promotion of this material in the future

Method used

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  • a bi <sub>6</sub> ti <sub>3</sub> fe <sub>2</sub> o <sub>18</sub> Layered multiferroic epitaxial thin film and its preparation method
  • a bi <sub>6</sub> ti <sub>3</sub> fe <sub>2</sub> o <sub>18</sub> Layered multiferroic epitaxial thin film and its preparation method
  • a bi <sub>6</sub> ti <sub>3</sub> fe <sub>2</sub> o <sub>18</sub> Layered multiferroic epitaxial thin film and its preparation method

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preparation example Construction

[0033] The present invention relates to a Bi 6 Ti 3 Fe 2 o 18 Multiferroic epitaxial thin film and its preparation method. The method is to combine the two-layer octahedral group BiFeO 3 Insertion into a three-layer layered perovskite ferroelectric Bi 4 Ti 3 o 12 Formation of a novel eight-layer layered perovskite Bi 6 Ti 3 Fe 2 o 18 Multiferroic epitaxial thin films. The present invention utilizes the pulsed laser deposition method to coat a film on a single crystal substrate, and after the deposition is completed, the 2 In-situ annealing treatment in the atmosphere, for the first time obtained Bi with room temperature ferroelectric and ferromagnetic properties and excellent quality 6 Ti 3 Fe 2 o 18 Layered multiferroic epitaxial thin films. The method requires simple equipment and is compatible with microelectronic technology. Prepared Bi 6 Ti 3 Fe 2 o 18 The layered multiferroic thin film has high phase purity and is an excellent room temperature multif...

Embodiment 1

[0059] (a) Bi 6 Ti 3 Fe 2 o 18 Target compression: to analyze pure bismuth oxide (Bi 2 o 3 ), titanium dioxide (TiO 2 ), iron oxide (Fe 2 o 3 ) as the main raw material, and the raw material ratio is Bi:Ti:Fe=6.48:3:2; mix the powder raw materials, put them into an automatic mortar to fully mix and grind for more than 24 hours; put the mixed powder into the mold for pre- Press molding, the shape is cylindrical, the diameter is 2cm, and the thickness is 0.5cm; it is pressed into Bi by cold isostatic pressing. 6 Ti 3 Fe 2 o 18 Target material, load pressure 260MPa, pressure holding time 8min.

[0060] (b) Preparation and cleaning of the substrate: using (001) oriented strontium titanate (SrTiO 3 ) single crystal substrate as the growth substrate, and ultrasonically cleaned with organic solvents such as acetone and isopropanol in sequence for 5 minutes, and finally dried with a nitrogen gun.

[0061] (c) Bi 6 Ti 3 Fe 2 o 18 Thin film growth: use the pulsed laser ...

Embodiment 2

[0065] (a) Bi 6 Ti 3 Fe 2 o 18 Target compression: to analyze pure bismuth oxide (Bi 2 o 3 ), titanium dioxide (TiO 2 ), iron oxide (Fe 2 o 3 ) as the main raw material, the raw material ratio is Bi:Ti:Fe=6.5:3:2; put it into an automatic mortar for full mixing and grinding for more than 24 hours; put the mixed powder into a mold for pre-compression molding, and the shape is a cylinder Shape, 2cm in diameter, 0.5cm in thickness; pressed into Bi by cold isostatic pressing 6 Ti 3 Fe 2 o 18 Target material, load pressure 180MPa, pressure holding time 20min.

[0066] (b) Preparation and cleaning of the substrate: using (110)-oriented dysprosium scandate (DyScO 3 ) single crystal substrate as the growth substrate, and ultrasonically cleaned with organic solvents such as acetone and isopropanol in sequence for 5 minutes, and finally dried with a nitrogen gun.

[0067] (c) Bi 6 Ti 3 Fe 2 o 18 Thin film growth: use the pulsed laser deposition method, fix the target in...

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Abstract

The invention relates to a Bi6Ti3Fe2O18 layered multiferroic epitaxial film and a preparation method thereof, wherein the Bi6Ti3Fe2O18 layered multiferroic epitaxial film is prepared by using a pulsedlaser deposition method, and has the chemical composition of Bi6Ti3Fe2O18. According to the present invention, the phase purity of the Bi6Ti3Fe2O18 layered multiferroic epitaxial film is high, the XRD characterization results show that no impurity phase exists, and the TEM results show that the film has good epitaxial property; and the Bi6Ti3Fe2O18 layered multiferroic epitaxial film has good ferroelectricity and considerable ferromagnetism, is the excellent room temperature multiferroic film material, and is beneficial to the development and promotion of novel multiferroic films.

Description

technical field [0001] The invention belongs to the technical field of new material preparation and relates to a Bi 6 Ti 3 Fe 2 o 18 Layered multiferroic epitaxial thin film and its preparation method. Background technique [0002] Multiferroic materials can exhibit ferroelectricity and ferromagnetism at the same time, and there is a magnetoelectric coupling between them, so that the mutual regulation of electricity and magnetism can be realized (J.Wang and R.Ramesh, Science 299, 1719(2003); W . Eerenstein and J.F. Scott, Nature 442, 759 (2006);). Therefore, as a new multifunctional material, multiferroic materials have broad application prospects in spintronics and many other fields. Among them, the multiferroic thin film material is compatible with microelectronic technology, so that the multiferroic thin film can be widely used in the fields of microsensors and multi-state storage. For example, magnetic recording reads fast but writes slowly, and ferroelectric recor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/22C30B25/02C30B33/02
Inventor 曹逊金平实孙光耀
Owner 江苏先进无机材料研究院
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