NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof

An ultraviolet detector, p-nio technology, applied in the field of photoelectric detectors, can solve the problems of slow response speed, unfavorable development trend, increasing the size of the detector, etc., to achieve less impurities, strong process controllability, stable and uniform thickness Effect

Pending Publication Date: 2021-07-13
金华紫芯科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In recent years, researchers have continuously optimized and prepared detectors with excellent photoresponsiveness, but these detectors usually require an external bias voltage to work, which virtually increases the size of the detector and is not conducive to the development trend of miniaturization , and the response speed is also slow

Method used

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  • NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof
  • NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof
  • NiO/GaN p-n junction-based self-powered ultraviolet detector and preparation method thereof

Examples

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Effect test

Embodiment 1

[0025] A method for preparing a self-powered ultraviolet detector based on a NiO / GaN p-n junction comprises the following steps:

[0026] The n-GaN layer is grown on the substrate by metal-organic chemical vapor deposition;

[0027] growing a p-NiO layer by magnetron sputtering on the side of the GaN layer away from the substrate;

[0028] A metal electrode is vapor-deposited on the n-GaN layer and the p-NiO layer by thermal evaporation, that is, the second electrode on the n-GaN layer and the first electrode on the p-NiO layer are formed. electrode.

[0029] The preparation process of the embodiment of the present application is simple, the process is highly controllable, and easy to operate. The surface of the n-GaN layer prepared by the method of metal-organic chemical vapor deposition and the p-NiO layer grown by magnetron sputtering are dense and thick. It is stable and uniform, can be prepared in a large area, and has good repeatability.

[0030] For the convenience o...

Embodiment 2

[0041] The difference from the variant embodiment 1 is that the substrate of the embodiment of the present application is a copper mesh substrate. Specifically, the method for preparing a self-powered ultraviolet detector based on a NiO / GaN p-n junction according to the embodiment of the present application specifically includes the following steps:

[0042] (1) Divide 10×10mm 2 The large and small copper grids were ultrasonically cleaned with acetone, absolute ethanol, and deionized water for 15 minutes, and then high-purity N 2 Pretreatment such as drying is performed to obtain a pretreated substrate.

[0043] (2) Put the dried copper mesh substrate into the metal-organic chemical vapor deposition MOCVD reaction chamber, and then 3 Under the atmosphere, using metal gallium as the gallium source, the temperature was raised to 800°C, and the copper grid substrate was nitrided, and then lowered to 600°C to grow n-GaN thin films, NH 3 The flow rate is 100mL / min, the metal-org...

Embodiment 3

[0052] The difference from Example 1 lies in the electrode fabrication in step (4), the first electrode and the second electrode in the example of the present application are graphene electrodes.

[0053] Specifically, the method for preparing a self-powered ultraviolet detector based on a NiO / GaN p-n junction according to the embodiment of the present application specifically includes the following steps:

[0054] (1) Divide 10×10mm 2 The large and small copper grids were ultrasonically cleaned with acetone, absolute ethanol, and deionized water for 15 minutes, and then high-purity N 2 Pretreatment such as drying is performed to obtain a pretreated substrate.

[0055] (2) Put the dried copper mesh substrate into the metal-organic chemical vapor deposition MOCVD reaction chamber, and then 3 Under the atmosphere, using metal gallium as the gallium source, the temperature was raised to 800°C, and the copper grid substrate was nitrided, and then lowered to 600°C to grow n-GaN t...

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Abstract

The invention belongs to the technical field of photoelectric detectors, and particularly relates to an NiO / GaNp-n junction-based self-powered ultraviolet detector and a preparation method thereof. The detector comprises a substrate, an n-GaN layer located above the substrate, a p-NiO layer located at one side, deviating from the substrate, of the n-GaN layer, a first electrode and a second electrode. The first electrode is located at the side, away from the n-GaN layer, of the p-NiO layer, the second electrode abuts against the n-GaN layer, and the n-GaN layer and the p-NiO layer form a NiO / GaN p-n junction. The NiO / GaNp-n junction self-powered ultraviolet detector prepared by the invention has a wide application prospect in the military and civil fields, such as ultraviolet bactericide quantity detection, missile tracking, corona monitoring, etc., can detect the ultraviolet light signals with zero power consumption, has good stability and self-powered capability, and can work for a long time in a severe environment.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, and in particular relates to a self-powered ultraviolet detector based on NiO / GaNp-n junction and a preparation method. Background technique [0002] The wavelength range of ultraviolet (UV) is from 10nm to 400nm, among which, mid-ultraviolet, far-ultraviolet and vacuum ultraviolet will be absorbed by the atmosphere, and it is difficult to reach the surface of the earth. Near-ultraviolet radiation penetrates the ozone layer and clouds to reach the surface. The ultraviolet radiation in daily life mainly comes from the near ultraviolet part. Excessive ultraviolet radiation can cause many diseases in the human body, such as cataracts, skin cancer and so on. Therefore, detection and monitoring of ultraviolet radiation, especially near ultraviolet radiation, is very important for human health. The traditional materials for the preparation of ultraviolet detectors are mainly first-generation ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/109H01L31/0304H01L31/032H01L31/18H01L21/02
CPCH01L21/0254H01L21/02565H01L21/0262H01L21/02631H01L31/03044H01L31/032H01L31/109H01L31/18H01L31/1856Y02P70/50
Inventor 王顺利郭道友王亚超吴小平
Owner 金华紫芯科技有限公司
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