LaSrMnCo codoped bismuth ferrite multiferroic film and preparation method thereof

A technology of multiferroic thin film and bismuth ferrite, which is applied in the direction of coating, etc., to achieve the effect of reducing oxygen vacancies, reducing leakage current, and suppressing valence fluctuations

Active Publication Date: 2017-09-01
SHAANXI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Currently, there is no information about Bi 0.97-x La x Sr 0.03 Fe 0.94 mn 0.04 co 0.02 o 3 Related reports on multiferroic thin films and their preparation methods

Method used

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  • LaSrMnCo codoped bismuth ferrite multiferroic film and preparation method thereof
  • LaSrMnCo codoped bismuth ferrite multiferroic film and preparation method thereof
  • LaSrMnCo codoped bismuth ferrite multiferroic film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0029] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0030] Step 2: Using bismuth nitrate, lanthanum nitrate, strontium nitrate, iron nitrate, manganese acetate and cobalt nitrate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.99:0.03:0.03:0.94:0.04:0.02 (x=0.03 ) is dissolved in ethylene glycol methyl ether, stirs 30min, then adds acetic anhydride, stirs 90min, obtains the stable precursor solution that metal ion total concentration is 0.3mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0031] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with an ultraviolet light irradiation instrument for 40 minutes, so that the surface of the FTO / glass substrate reaches atomic cleanliness, and then spin-coat the precursor solution on the FTO / gl...

Embodiment 2

[0035] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0036] Step 2: Taking bismuth nitrate, lanthanum nitrate, strontium nitrate, iron nitrate, manganese acetate and cobalt nitrate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.96:0.06:0.03:0.94:0.04:0.02 (x=0.06 ) is dissolved in ethylene glycol methyl ether, stirs 30min, then adds acetic anhydride, stirs 90min, obtains the stable precursor solution that metal ion total concentration is 0.3mol / L; Wherein the volume ratio of ethylene glycol methyl ether and acetic anhydride is 3:1;

[0037] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with an ultraviolet light irradiation instrument for 40 minutes, so that the surface of the FTO / glass substrate reaches atomic cleanliness, and then spin-coat the precursor solution on the FTO / g...

Embodiment 3

[0041] Step 1: Clean the FTO / glass substrate with detergent, acetone, and absolute ethanol respectively and seal it in absolute ethanol for later use;

[0042] Step 2: Using bismuth nitrate, lanthanum nitrate, strontium nitrate, iron nitrate, manganese acetate and cobalt nitrate as raw materials (5% excess bismuth nitrate), the molar ratio is 0.93:0.09:0.03:0.94:0.04:0.02 (x=0.0 .09) be dissolved in ethylene glycol methyl ether, stir 30min, then add acetic anhydride, stir 90min, obtain the stable precursor solution that the total concentration of metal ions is 0.3mol / L; wherein the volume of ethylene glycol methyl ether and acetic anhydride The ratio is 3:1;

[0043] Step 3: Wash the FTO / glass substrate with deionized water and use N 2 Blow dry, and then irradiate the clean FTO / glass substrate with a UV irradiator for 40 minutes, so that the surface of the FTO / glass substrate reaches atomic cleanliness, and then spin-coat the precursor solution on the FTO / glass substrate, and...

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Abstract

The invention provides a LaSrMnCo codoped bismuth ferrite multiferroic film and a preparation method thereof. A Bi(0.97-x)LaxSr0.03Fe0.94Mn0.04Co0.02O3 multiferroic film, namely the LaSrMnCo codoped bismuth ferrite multiferroic film, is prepared by taking bismuth nitrate, lanthanum nitrate, strontium nitrate, ferric nitrate, manganese acetate and cobalt nitrate as raw materials (bismuth nitrate of excessive 5 percent), taking ethylene glycol monomethyl ether and acetic anhydride as solvents and using a spin-coating method and a layer-by-layer annealing process. A sol-gel process is adopted, spin-coating and layer-by-layer annealing methods are adopted, equipment requirements are simple, experimental conditions are easy to realize, the film is suitably prepared on a large surface and an irregularly shaped surface, chemical components are accurately controllable, the multiferroic property of the BiFeO3 film can be improved, the prepared the LaSrMnCo codoped bismuth ferrite multiferroic film has high uniformity and is a multiferroic film with high residual polarization value and low coercive field, and the ferroelectric and dielectric properties of the film are effectively enhanced.

Description

technical field [0001] The invention belongs to the field of functional materials, and relates to the preparation of a LaSrMnCo co-doped bismuth ferrite multiferroic film on the surface of a functionalized FTO / glass substrate, specifically Bi 0.97-x La x Sr 0.03 Fe 0.94 mn 0.04 co 0.02 o 3 Multiferroic thin film, x=0.03~0.18. Background technique [0002] Multiferroic materials refer to materials that simultaneously possess two or more of ferroelectricity, ferromagnetism or ferroelasticity within a certain temperature range. BiFeO 3 (BFO) is one of the few single-phase multiferroic materials with a twisted perovskite structure (belonging to the R3c point group), which deviates from the ideal perovskite structure formed by stretching the cubic structure along the (111) direction. The oblique hexagonal structure has both ferroelectric order and antiferromagnetic order at room temperature. Due to the high ferroelectric phase transition temperature (Tc=1103K) and magneti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34C04B35/40C04B35/622
CPCC03C17/3417C03C2217/94C03C2218/116C03C2218/32C04B35/2633C04B35/2641C04B35/62222C04B2235/656C04B2235/768
Inventor 谈国强柴正军乐忠威薛敏涛任慧君夏傲
Owner SHAANXI UNIV OF SCI & TECH
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