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BiFeO3 based sandwich construction thin-film for ferro-electric memory and preparation thereof

A ferroelectric memory, based sandwich technology, applied in the field of BiFeO3-based sandwich structure film and its preparation, can solve the problems of high leakage current, high charge retention, high residual polarization and the like of ferroelectric thin film, and achieves the reduction of leakage current, Improved charge retention, effect of large remanent polarization

Inactive Publication Date: 2009-03-18
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] To solve BiFeO 3 Ferroelectric thin film has higher leakage current, higher coercive field and easy aging. The present invention aims to provide a kind of BiFeO used for ferroelectric memory. 3- Based on the sandwich structure film, a ferroelectric film with high remanent polarization, low leakage current, low coercive field, and high charge retention has been obtained, which has good practical prospects in future ferroelectric memory devices

Method used

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  • BiFeO3 based sandwich construction thin-film for ferro-electric memory and preparation thereof
  • BiFeO3 based sandwich construction thin-film for ferro-electric memory and preparation thereof
  • BiFeO3 based sandwich construction thin-film for ferro-electric memory and preparation thereof

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Experimental program
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Effect test

Embodiment 1

[0022] The BiFeO used in the ferroelectric memory of the present embodiment 3 -Based sandwich structure film, the upper and lower surface materials are BiFe 0.98 Ti 0.02 o 3 Thin film, the middle layer material is BiFe 0.98 Zn 0.02 o 3 .

[0023] The preparation method of above-mentioned sandwich structure film is:

[0024] (1) Weigh bismuth nitrate, ferric nitrate and tetrabutyl titanate with a molar ratio of 1.02:0.98:0.02 respectively, dissolve bismuth nitrate and ferric nitrate with 40ml of ethylene glycol, configure solution A, take tetrabutyl titanate Equal volume of acetylacetone to form complex solution B, after stirring solutions A and B for 40 minutes, mix and prepare BiFe with a concentration of 0.10mol / L 0.98 Ti 0.02 o 3 Precursor solution: Weigh bismuth nitrate, iron nitrate and zinc nitrate with a molar ratio of 1.02:0.98:0.02 and dissolve them in 40ml of ethylene glycol, and prepare BiFe with a concentration of 0.10mol / L according to conventional method...

Embodiment 2

[0028] The BiFeO used in the ferroelectric memory of the present embodiment 3 -Based sandwich structure film, the upper and lower surface materials are BiFe 0.98 Zr 0.02 o 3 Thin film, the middle layer material is BiFe 0.97 La 0.03 o 3 .

[0029] The preparation method of above-mentioned sandwich structure film is:

[0030] (1) Weigh bismuth nitrate, iron nitrate and zirconium isopropoxide with a molar ratio of 1.02:0.98:0.02 respectively, dissolve bismuth nitrate and iron nitrate with 40ml ethylene glycol, and prepare BiFe with a concentration of 0.10mol / L 0.98 Zr 0.02 o 3 Precursor solution: Weigh bismuth nitrate, ferric nitrate and lanthanum nitrate with a molar ratio of 1.02:0.97:0.03 and dissolve them in 40ml of ethylene glycol, and prepare BiFe with a concentration of 0.10mol / L according to conventional methods. 0.97 La 0.03 o 3 Precursor solution;

[0031] (2) Using the same method as in Example 1, the precursor solution is deposited sequentially, the precur...

Embodiment 3

[0033] The BiFeO used in the ferroelectric memory of the present embodiment3 -Based sandwich structure film, the upper and lower surface materials are BiFe 0.99 Ta 0.01 o 3 Thin film, the middle layer material is BiFe 0.95 mn 0.05 o 3 .

[0034] The preparation method of above-mentioned sandwich structure film is:

[0035] (1) Weigh bismuth nitrate, ferric nitrate and tantalum ethoxide with a molar ratio of 1.02:0.99:0.01 respectively, dissolve bismuth nitrate and ferric nitrate with 40ml of ethylene glycol, configure solution A, and take acetylacetone equal to the volume of tantalum ethoxide To form complex solution B, stir solutions A and B for 40 minutes respectively, then mix and prepare BiFe with a concentration of 0.05mol / L 0.99 Ta 0.01 o 3 Precursor solution: Weigh bismuth nitrate, ferric nitrate and manganese nitrate with a molar ratio of 1.02:0.95:0.05 and dissolve them in 40ml of ethylene glycol to prepare 0.15mol / L BiFe 0.95 mn 0.05 o 3 Thin film precurso...

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Abstract

The invention relates to a BiFeO3-base sandwich structure film used for a ferroelectric memory and a process for preparation, belonging to the technical field of microelectronic new materials, wherein the upper surface component and the lower surface component of the BiFeO3-base sandwich structure film both are BiFe1-xHxO3, H is doped high valence ion with quadravalence or over quadravalence, the component of the intermediate layer is BiFe1-xLxO3, L is doped high valence ion with trivalence or below trivalence. The process for preparation comprises adopting the chemical solution method combined with the annealing technology in layer by layer, and preparing through depositing precursor solution in the surface layers of different materials in the spin-coating method. The invention greatly reduces the drain current of the film through adopting a special sandwich structure, effectively reduces coercive field, significantly increases the charge retention, obtains the ferroelectric film with low drain current, large residual polarization, low coercive field and excellent charge retention under the annealing temperature of 500 DEG C-600 DEG C, and has great practicable prospects in further ferroelectric memories.

Description

technical field [0001] The present invention relates to a kind of BiFeO for ferroelectric memory 3 The invention discloses a thin film with a -based sandwich structure and a preparation method thereof, belonging to the technical field of new microelectronic materials. Background technique [0002] BiFeO 3 The material has a simple perovskite structure and has two structural orders at room temperature, that is, ferroelectric order (T C ~830℃) and G-type ferromagnetic ordering (T N ~370°C), it is one of the few ferroelectric materials with both ferroelectricity and ferromagnetism at room temperature. Recently, researchers have demonstrated that BiFeO 3 It has good ferroelectric properties and is expected to be applied to ferroelectric memory devices. However, BiFeO prepared by chemical solution method 3 Material leakage current is higher, moreover, due to the BiFeO 3 The Curie point of the film is very high (T C ~830℃), and the preparation temperature is very low (≤550...

Claims

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Application Information

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IPC IPC(8): H01L27/115H01L21/02H01L21/8247
Inventor 胡广达闫静陈雪梅杨长红武卫兵殷在梅程玲王金翠
Owner UNIV OF JINAN
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