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Method for improving photoelectric property of BLFO/ZnO heterojunction by utilizing ferroelectricity and piezoelectric optoelectronics effects

A technology of optoelectronics and optoelectronic properties, applied in nanotechnology for materials and surface science, nanotechnology for information processing, circuits, etc. Improve the effect of significant and fast response speed

Pending Publication Date: 2020-09-29
HENAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, researches on BFO have mainly focused on multiferroics and photovoltaic properties, which limit the application of BFO

Method used

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  • Method for improving photoelectric property of BLFO/ZnO heterojunction by utilizing ferroelectricity and piezoelectric optoelectronics effects
  • Method for improving photoelectric property of BLFO/ZnO heterojunction by utilizing ferroelectricity and piezoelectric optoelectronics effects
  • Method for improving photoelectric property of BLFO/ZnO heterojunction by utilizing ferroelectricity and piezoelectric optoelectronics effects

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1. A method for improving the optoelectronic performance of BLFO / ZnO heterojunction by using ferroelectricity and piezoelectric photoelectronics effect, by applying pulse bias voltage to BLFO / ZnO heterojunction device, calling BLFO ferroelectricity, BLFO / ZnO heterojunction After the ferroelectricity of BLFO is invoked by the ZnO heterojunction device, compressive strain is applied to the BLFO / ZnO heterojunction device to introduce the piezoelectric photoelectronic effect, so as to achieve the purpose of simultaneously mobilizing the ferroelectric and piezoelectric photoelectronic effects to enhance the current carrying The total driving force of electrons, and test the optoelectronic performance of BLFO / ZnO heterojunction.

[0040] The BLFO / ZnO heterojunction device is formed by BLFO ferroelectric film and ZnO nanowire array. The upper electrode of the BLFO / ZnO heterojunction device is an ITO electrode prepared by magnetron sputtering. During the sputtering pr...

Embodiment 2

[0048] Embodiment 2, analyzing the BLFO / ZnO heterojunction device.

[0049] figure 1 It is a schematic diagram of the three-dimensional structure of a BLFO / ZnO heterojunction device. like figure 2 As shown, the surface of the BLFO film prepared by the sol-gel method in this application is dense, the grain size is uniform, and it has good planarity. Thus, in image 3 In the SEM top view of the ZnO nanowire array in , the ZnO nanowire array is evenly distributed, and it can be seen from the illustration that the top surface of the zinc oxide nanowire has a hexagonal crystal structure, with a uniform diameter of about 200nm, so it has a high c-axis Orientation, with good piezoelectric properties. from Figure 4 It can be clearly seen that the thickness of the FTO conductive layer is about 380nm, the thickness of the BLFO film is about 270nm, and the thickness of the ZnO seed layer is about 1 μm. The ZnO nanowire array has a uniform length of about 6 μm. The interface of F...

Embodiment 3

[0050] Embodiment 3. The J-V (current density-voltage) characteristics of the BLFO / ZnO heterojunction device were tested under a series of laser power densities to verify that it has a photovoltaic effect.

[0051] Image 6 A schematic diagram showing the measurement of photovoltaic characteristics, Figure 7 The schematic diagram of photovoltaic characteristic measurement is shown, and the J-V characteristics of BLFO / ZnO under different light conditions are tested and recorded. like Figure 7 As shown, the photovoltaic characteristics of BLFO / ZnO heterojunction devices gradually increase with the increase of laser power density. Photovoltaic properties of BLFO / ZnO heterojunction devices. When a heterojunction device is biased with a negative (positive) pulse on top of the ITO transparent electrode, it is defined as upward (downward) polarization. Figure 9 It can be clearly seen that there are differences in the photovoltaic characteristics under different polarization st...

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Abstract

The invention discloses a method for improving the photoelectric property of a BLFO / ZnO heterojunction by utilizing ferroelectricity and piezoelectric optoelectronics effects and relates to the fieldof ferroelectric semiconductor heterojunction devices. A pulse bias voltage is applied to a BLFO / ZnO heterojunction device, ferroelectricity of the BLFO is called, the BLFO / ZnO heterojunction device calls the ferroelectricity of the BLFO, compressive strain is applied to the BLFO / ZnO heterojunction device to introduce a piezoelectric photoelectronic effect, a purpose of simultaneously calling ferroelectricity and piezoelectric photoelectronic effects is achieved, and the total driving force of current carriers is enhanced. The preparation method is advantaged in that the BLFO / ZnO heterojunction device is prepared by adopting a sol-gel method and a hydrothermal method, influence of the piezoelectric photoelectronic effect and the ferroelectric effect on the photovoltaic characteristics is researched, carrier transport operation is modulated by using a piezoelectric photoelectronic effect, an open-circuit voltage and a short-circuit current of the BLFO / ZnO heterojunction device are remarkably improved, external electric field polarization is introduced on the basis of compressive strain, the piezoelectric photoelectronic effect and ferroelectricity are called, the total driving forceof a heterojunction energy band structure and carriers is modulated, and therefore photoelectric performance of the heterojunction is improved.

Description

technical field [0001] The invention relates to the field of ferroelectric semiconductor heterojunction devices, in particular to a method for improving the optoelectronic performance of BLFO / ZnO heterojunction by utilizing ferroelectricity and piezoelectric photoelectronics effects. Background technique [0002] In recent decades, the situation of global warming and energy crisis have become increasingly severe. A lot of research is devoted to exploring green renewable energy. Photoelectric energy conversion in ferroelectric materials was proposed more than 30 years ago and has attracted great interest due to the direct conversion of light into electricity through the photoelectric effect. The photovoltaic effect generally involves two basic processes. First, the device absorbs incident photons to excite electron-hole pairs to generate photogenerated carriers. The driving force within the optoelectronic device then transports the charge carriers to the electrodes. In fe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0336H01L31/072H01L31/18B82Y10/00B82Y30/00B82Y40/00
CPCH01L31/03365H01L31/072H01L31/18B82Y10/00B82Y30/00B82Y40/00Y02E10/50Y02P70/50
Inventor 郑海务张远征蒋俊华丁震宇张亚菊种榉
Owner HENAN UNIVERSITY
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