Alpha-indium selenide two-dimensional photoelectric detector based on transparent electrode

Abstract

The invention discloses an alpha-indium selenide two-dimensional photoelectric detector based on a transparent electrode, which comprises an alpha indium selenide two-dimensional ferroelectric semiconductor layer, a hafnium oxide dielectric layer and a doped silicon substrate which are sequentially distributed from top to bottom, the alpha-indium selenide two-dimensional ferroelectric semiconductor layer is provided with the transparent electrode, and the detector is small in size and low in cost. Photoelectric responsivity is high.

Description

technical field [0001] The invention relates to a photodetector that can be used in integrated circuits, in particular to a two-dimensional alpha-indium selenide photodetector based on transparent electrodes. Background technique [0002] With the development of silicon-based semiconductor integrated circuits, the size of nano-semiconductor devices continues to shrink, and the emergence of nano-scale devices has greatly promoted the development of the electronic information industry. However, the reduction in device size is also accompanied by an increase in power consumption. At the same time, due to the limitations of production equipment and quantum effects, the development of silicon-based semiconductor devices has encountered a bottleneck. The road to the further development of integrated devices In addition to making more efforts in terms of device size and power consumption, the functions of integrated devices are also developing in the direction of realizing multiple...

AI Technical Summary

Problems solved by technology

However, the single energy band structure of traditional semiconductor materials leads to a small spectral response range, which in turn causes the problem of low spectral response or even no response in some bands, which limits the application of related devices in the field of photoelectric detection.

[0004] Metal electrodes are mostly used for photodetector electrodes. For thicker metal electrodes, the transmittance is low, which affects the absorption of incident light by the photoelectric functional layer of the device.

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