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Dual-frequency terahertz band-pass filter

A band-pass filter, dual-frequency technology, applied in the field of terahertz technology and semiconductor micro-processing, to achieve the effects of simple composition, convenient operation and simple preparation process

Inactive Publication Date: 2014-12-10
SHANGHAI NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This makes the above design only sensitive to a single frequency

Method used

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Embodiment Construction

[0025] Below in conjunction with accompanying drawing and embodiment, the present invention is described in further detail, clearly and completely

[0026] Embodiment of the present invention. Described a kind of dual-frequency terahertz band-pass filter (as attached figure 1 shown in the upper part), the structure in which the black part in the figure is the metal layer, and the blank part is the hollow complementary split resonant ring microstructure unit. Among them, the grid area represents SI-GaAs substrate, the black square part represents 50nm gold, and the gray square part represents 5nm titanium (as attached figure 1 shown in the lower part). It is characterized in that the two-dimensional structure of the periodic complementary split ring resonant unit has a unit period of 40 μm, an outer diameter of 16 μm, an inner diameter of 12 μm, and a gap width g ranging from 2 μm to 10 μm, all of which can achieve dual frequencies Function of a terahertz bandpass filter.

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Abstract

The invention relates to a dual-frequency terahertz band-pass filter, in particular to the design and production of the dual-frequency terahertz band-pass filter with a semi-insulating gallium arsenide based hollow surface and a complementary split ring resonator, and relates to the terahertz technology and the technical field of semiconductor micromachining. The dual-frequency terahertz band-pass filter utilizing the working principle of the complementary split ring resonator achieves surface plasma polariton resonance through the adjustment on the inner diameter, outer diameter, opening width and periodic structure of the C-SRR (split ring resonator) and obtains low-frequency and high-frequency resonance in two abnormal transmission enhancement modes of inductance-capacitance (LC) resonance. The energy conversion between two resonance frequencies is achieved through the electromagnetic interaction of the two resonances, so that the terahertz reaching the same transmission strength at two bands can be output. The dual-frequency terahertz band-pass filter takes advantage of an existing semiconductor micromachining process and is simple in production process, easy to operate and capable of accurately controlling a micro-structure machining area of the complementary split ring resonator and greatly reducing production costs.

Description

technical field [0001] The invention relates to the field of terahertz technology and semiconductor micromachining technology, and specifically refers to a dual-frequency terahertz (THz) based on a semi-insulating gallium arsenide (SI-GaAs) surface with a hollow complementary split-ring resonator (C-SRR). ) Design and fabrication of bandpass filters. Background technique [0002] Terahertz wave (Terahertz, referred to as THz) refers to the electromagnetic wave between microwave and infrared spectrum, the frequency range is 0.1THz to 10THz (1THz=10 12 Hz), a special region on the electromagnetic spectrum between ultra-high frequency microwaves and far-infrared radiation. Compared with the common ultrasonic waves, X-rays, and mid-to-far infrared, THz waves have non-ionizing and coherent characteristics, and will not destroy the internal structure and intrinsic properties of the detected substances. Common paper, plastic, and dry wood are nearly transparent to THz electromagn...

Claims

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Application Information

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IPC IPC(8): H01P1/20H01P11/00
Inventor 赵振宇宋志强石旺舟
Owner SHANGHAI NORMAL UNIVERSITY
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