The invention belongs to the technical field of terahertz modulators and
millimeter wave communication, and provides a high-power terahertz modulator based on
gallium nitride Schottky. According to the invention, the
dynamic switching of the resonant mode of the resonant micro-unit is realized by using the switching characteristic of the GaN
Schottky diode under forward /
reverse bias; when the
diode is positively biased, the
diode is conducted, so that the
resonance micro unit is in a
closed loop resonance state, and terahertz wave conduction is realized; when the
diode is in zero /
reverse bias, the
resonance micro-unit is in a double-opening resonance state, the modulator is in a turn-off state, the diode is in the turn-off state at the moment, and the
thermal runaway risk of the diode in the on state is effectively restrained. Meanwhile, by transversely expanding the
metal areas on the two sides of the gap of the double-gap rectangular opening resonant ring, the
electric field distribution space is expanded, the peak
field intensity is reduced, and the power
bearing capacity of the diode is improved; finally, collaborative improvement of the modulator in the aspects of high power tolerance, high speed, low
insertion loss and the like is realized.