Near infrared photoelectric detector with enhancement based on utilization of indium tin oxide nanoparticles

A nanoparticle and indium tin oxide technology, which is applied in the field of photodetectors, can solve problems such as the inability to realize the surface plasmon resonance effect, and achieve the effects of diversification of preparation methods, improvement of sensitivity, and considerable economic benefits

Inactive Publication Date: 2012-06-27
SOUTHEAST UNIV
View PDF4 Cites 18 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, metal nanoparticles generally can only form surface plasmon resonance in the visible light range or near the wavelength of 1000 nanometers, and cannot achieve the surface plasmon resonance effect with a wavelength greater than 1500 nanometers.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Near infrared photoelectric detector with enhancement based on utilization of indium tin oxide nanoparticles
  • Near infrared photoelectric detector with enhancement based on utilization of indium tin oxide nanoparticles
  • Near infrared photoelectric detector with enhancement based on utilization of indium tin oxide nanoparticles

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0028] The preparation method of the transparent electrode 2 includes magnetron sputtering method, chemical vapor deposition method, sol-gel method, thermal evaporation method and chemical synthesis method. The material of the transparent electrode 2 is a highly conductive infrared transparent material.

[0029] The photoelectric conversion material 3 is any one of metal or semiconductor materials such as Si, Ge, Zn, Au, Cu, Hg, InAs, InSb, HgCdTe, PbSnTe, and doped materials thereof.

[0030] Indium tin oxide nanoparticles 4 are nano-dielectric materials enhanced by near-infrared surface plasmons, with sizes ranging from a few nanometers to hundreds of nanometers. Indium tin oxide nanoparticles 4 are prepared by magnetron sputtering, activation reaction It can be prepared by any one of evaporation method, chemical vapor deposition and sol-gel method.

[0031] The back electrode 5 is made of metal or a conductive semiconductor thin film.

[0032] Metal or conductive semicondu...

Embodiment 1

[0042] Preparation of ITO Nanoparticles by Sol-Gel Method

[0043] First, dissolve a certain amount of metal indium in dilute nitric acid and prepare indium nitrate pentahydrate crystals by evaporation and crystallization, then weigh a certain amount of indium nitrate pentahydrate and put it into a three-necked flask, add a certain amount of acetylacetone, and add a little ice at the same time Acetic acid is the most sol stabilizer. After heating for a few minutes while stirring, mix the ethanol solution evenly with the above solution, and stir again for a few minutes to obtain a stable ITO sol. After the sol is prepared, spin-coat it on the transparent conductive glass that needs to be prepared. Heating can Obtain ITO nanoparticles 4.

Embodiment 2

[0045] Preparation of near-infrared photodetectors with enhanced efficiency by ITO nanoparticles

[0046] A layer of aluminum-doped zinc oxide is prepared as a transparent electrode 2 on the transparent glass 1 by magnetron sputtering, with a thickness of 10-50 nanometers. The ITO nanoparticles 4 prepared by spin-coating a layer of sol-gel method on the transparent electrode by the spin coating method have a particle size of several nanometers to hundreds of nanometers. P-type and N-type InAs semiconductor materials are respectively prepared on the transparent electrode 2 of the nanoparticles 4 as the photoelectric conversion material 3, and finally a layer of aluminum film of several microns is prepared on the InAs semiconductor material by vacuum high-temperature evaporation as the back electrode 5 , the signal wiring is led out from the transparent electrode 2 and the back electrode 5, that is, the preparation of the near-infrared photodetector with ITO nanoparticle efficie...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention, which belongs to the infrared detector field, particularly relates to a near infrared photoelectric detector with enhancement based on utilization of indium tin oxide nanoparticles. The near infrared photoelectric detector successively comprises transparent glass (1) with high infrared transmissivity, a transparent electrode (2), a photoelectric conversion material (3), indium tin oxide nanoparticles (4), and a back electrode (5) from top to bottom. After incident infrared radiation passes through the transparent glass (1), the transparent electrode (2), and the photoelectric conversion material (3), a portion of the infrared radiation is localized at the surfaces of the indium tin oxide nanoparticles (4), scattering is generated and a surface plasma polariton transmission mode is formed, so that an effective transmission distance of the incident electromagnetic wave in the photoelectric conversion material (3) can be increased. According to the invention, the near infrared photoelectric detector with enhancement based on utilization of indium tin oxide nanoparticles has advantages of diversity of a preparation technology, low manufacturing cost, adjustable enhancement resonant position and high sensitivity and the like.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, in particular to a near-infrared photodetector which utilizes indium tin oxide (ITO) nanoparticles to increase efficiency. Background technique [0002] Near-infrared radiation mainly refers to electromagnetic waves in the range of 780-3 000nm generated by heat sources. The change in the temperature of the radiation source determines the energy distribution of infrared radiation. The higher the temperature, the shorter the wavelength of infrared radiation. Therefore, people can use infrared Radiation detection to find and track heat sources. This application has broad prospects in civilian and military applications. For example, people use near-infrared detectors to monitor fires. In military terms, near-infrared detectors can be widely used in night observation, military target tracking, etc. The necessary equipment is missing. [0003] In the field of photodetectors, spectral responsiv...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/032H01L31/101
Inventor 张彤张晓阳朱圣清
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap