Application of UB2 film to black cavity
A UB2 thin film technology, applied in the application field of UB2 thin film, can solve problems such as limited ability to suppress stimulated Brillouin scattering, difficulty in controlling component ratio and distribution, complex structure of uranium black cavity, etc., and achieve suppression of M-band hot electrons Yield, good interfacial binding force and chemical compatibility, and the effect of protecting the conversion layer of uranium black cavity
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specific Embodiment approach 1
[0008] Specific implementation mode 1: This implementation mode is a UB 2 Application of thin film on black cavity, UB 2 The thin film is applied on the black cavity as a dissipation / protection layer instead of the black cavity Au / B dissipation layer and Au protection layer.
[0009] Compared with Au / B, UB 2 The relatively high content of B element in the medium can effectively suppress the stimulated Brillouin scattering, and at the same time, the U element has a good effect of suppressing the hot electron yield of the M band, and the most important thing is the UB 2 The chemical properties are stable, so UB 2 The thin film has the functions of both dissipation reduction and protection, and can directly replace the Au / B dispersion reduction layer and the Au protection layer.
specific Embodiment approach 2
[0010] Specific implementation mode 2: the difference between this implementation mode and specific implementation mode 1 is: the use of UB 2 Thin films are used as diffusion reducing / protective layers as follows: by DC magnetron sputtering deposition method, with UB 2 The target is deposited by magnetron sputtering through a DC power supply, the UB 2 Target purity was greater than 99%. Others are the same as the first embodiment.
specific Embodiment approach 3
[0011] Specific embodiment three: the difference between this embodiment and specific embodiment two is: the specific process of the described DC magnetron sputtering deposition method is as follows:
[0012] 1. Install 1 to 10 mandrels on the rotating support table and adjust the UB 2 The distance between the target and the mandrel center is 5cm~20cm, UB 2 The normal line of the center of the target surface and the plane where the mandrel is located form an angle of 45°;
[0013] 2. Make the background vacuum of the deposition chamber reach 1×10 by vacuuming the mechanical pump and the molecular pump -8 Pa~1×10 -6 Pa, then fill with high-purity argon, and adjust the gate valve to maintain the vacuum degree of the deposition chamber at 0.1Pa~1Pa, the purity of the high-purity argon is 99.9999%;
[0014] 3. Etching the surface of the mandrel with a low-energy ion beam for 3 minutes to 20 minutes, and during the process of etching the surface of the mandrel with a low-energy ...
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