Application of UB2 film to black cavity

A UB2 thin film technology, applied in the application field of UB2 thin film, can solve problems such as limited ability to suppress stimulated Brillouin scattering, difficulty in controlling component ratio and distribution, complex structure of uranium black cavity, etc., and achieve suppression of M-band hot electrons Yield, good interfacial binding force and chemical compatibility, and the effect of protecting the conversion layer of uranium black cavity

Active Publication Date: 2017-08-18
LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problems of complex structure of the existing uranium black cavity, poor chemical stability of the Au/B dispersion layer, di

Method used

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Examples

Experimental program
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Effect test

specific Embodiment approach 1

[0008] Specific implementation mode 1: This implementation mode is a UB 2 Application of thin film on black cavity, UB 2 The thin film is applied on the black cavity as a dissipation / protection layer instead of the black cavity Au / B dissipation layer and Au protection layer.

[0009] Compared with Au / B, UB 2 The relatively high content of B element in the medium can effectively suppress the stimulated Brillouin scattering, and at the same time, the U element has a good effect of suppressing the hot electron yield of the M band, and the most important thing is the UB 2 The chemical properties are stable, so UB 2 The thin film has the functions of both dissipation reduction and protection, and can directly replace the Au / B dispersion reduction layer and the Au protection layer.

specific Embodiment approach 2

[0010] Specific implementation mode 2: the difference between this implementation mode and specific implementation mode 1 is: the use of UB 2 Thin films are used as diffusion reducing / protective layers as follows: by DC magnetron sputtering deposition method, with UB 2 The target is deposited by magnetron sputtering through a DC power supply, the UB 2 Target purity was greater than 99%. Others are the same as the first embodiment.

specific Embodiment approach 3

[0011] Specific embodiment three: the difference between this embodiment and specific embodiment two is: the specific process of the described DC magnetron sputtering deposition method is as follows:

[0012] 1. Install 1 to 10 mandrels on the rotating support table and adjust the UB 2 The distance between the target and the mandrel center is 5cm~20cm, UB 2 The normal line of the center of the target surface and the plane where the mandrel is located form an angle of 45°;

[0013] 2. Make the background vacuum of the deposition chamber reach 1×10 by vacuuming the mechanical pump and the molecular pump -8 Pa~1×10 -6 Pa, then fill with high-purity argon, and adjust the gate valve to maintain the vacuum degree of the deposition chamber at 0.1Pa~1Pa, the purity of the high-purity argon is 99.9999%;

[0014] 3. Etching the surface of the mandrel with a low-energy ion beam for 3 minutes to 20 minutes, and during the process of etching the surface of the mandrel with a low-energy ...

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Abstract

The invention provides an application of a UB2 film to a black cavity, belongs to the technical field of laser fusion engineering and specifically relates to the application of the UB2 film having black cavity scattering reduction and protection functions. The invention is to solve the problems that an existing uranium black cavity is complex in structure, an Au/B scattering reduction layer is poor in chemical stability and component proportion and distribution are difficult to regulate and control. The UB2 film is applied to the black cavity as a scattering reduction/protection layer instead of a black cavity Au/B scattering reduction layer and an Au protection layer. The advantages are that through application of the UB2 film to the black cavity, precise control of film components can be realized, black cavity mold release process difficulty is reduced, and laser plasma stimulated Brillouin scattering is suppressed effectively; and meanwhile, the UB2 film also has the functions of reducing M-band hot electron yield, improving laser-X ray conversion efficiency and protecting a uranium black cavity conversion layer. The UB2 film integrates functions of scattering reduction and protection, and effectively simplifies ignition black cavity and other high-performance and high-conversion-rate black cavity structures and preparation processes thereof.

Description

technical field [0001] The invention belongs to the technical field of laser fusion engineering, and in particular relates to a UB with both black cavity dissipation and protection functions 2 film application. Background technique [0002] Indirectly driven laser inertial confinement fusion (ICF) has become a key research direction to achieve controlled thermonuclear fusion reaction because of its advantages of providing a more uniform irradiation field and effectively avoiding fuel preheating. During the indirect-driven ICF experiment, the laser is incident on the black cavity and interacts nonlinearly with the plasma in the cavity, which leads to the growth of nonlinear parametric instability processes including stimulated Brillouin scattering (SBS), and affects the fusion adverse effects on the process. The large-scale laser-plasma interaction in the black cavity is considered to be one of the two most uncertain factors in the ignition process. As a key component for ...

Claims

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Application Information

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IPC IPC(8): G21B1/11C23C14/06
CPCC23C14/067G21B1/11Y02E30/10
Inventor 邢丕峰李宁柯博李翠易泰民杨蒙生郑凤成王丽雄赵利平
Owner LASER FUSION RES CENT CHINA ACAD OF ENG PHYSICS
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