GaN (gallium nitride)-based semiconductor laser and manufacturing method thereof

A gallium nitride based technology and a manufacturing method, applied in semiconductor lasers, lasers, laser parts, etc., can solve problems such as crystal quality decline, defect concentration increase, laser increase, etc.

Inactive Publication Date: 2011-10-26
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the large ionization energy of acceptor impurities in P-type GaN and AlGaN, such as the ionization energy of magnesium impurities in GaN is between 0.16eV and 0.20eV, such a large ionization energy can make the ionization rate of magnesium impurities less than 1%, and improve the magnesium The doping concentration will cause the decrease of the crystal quality and the increase of the defect concentration, so that the ionized magnesium is compensated by the increased donor, but the hole concentration is reduced.
At the same time, a high doping concentration will reduce the hole mobility. Therefore, the p-type doping of GaN and AlGaN has always been the main obstacle to the improvement of the performance of GaN-based optoelectronic devices.
The hole concentration of the P-type GaN waveguide layer, the P-type AlGaN optical confinement layer and the P-type GaN cladding layer in the GaN-based laser is relatively low, which not only makes the resistivity of the p-type part of the laser relatively l

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  • GaN (gallium nitride)-based semiconductor laser and manufacturing method thereof
  • GaN (gallium nitride)-based semiconductor laser and manufacturing method thereof
  • GaN (gallium nitride)-based semiconductor laser and manufacturing method thereof

Examples

Experimental program
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Example Embodiment

[0030] Example 1

[0031] In order to further illustrate the effect of the device structure, we take a GaN-based laser with an operating wavelength of 405nm as an example to illustrate the preparation process of the device structure. The material and thickness of each layer are shown in Table 1. The details are as follows: the device structure is grown on the gallium nitride substrate 10 of the (0001) plane by using the MOCVD method. The structure includes, n-type Al 0.2 Ga 0.8 N / GaN superlattice lower confinement layer 11 (thickness is 0.76 μ m, GaN well width is 2.0 nm, Al 0.2 Ga 0.8N barrier width is 2.0nm, doping concentration is 3.0×10 18 cm -3 ), n-type Al 0.25 Ga 0.75 N / GaN multi-quantum well quantum cascade radiation layer 12, this layer has three periods in total, and each period is Al from bottom to top 0.25 Ga 0.75 N(2.0nm) / GaN(2.8nm) / Al 0.25 Ga 0.75 N(2.0nm) / GaN(1.8nm) / Al 0.25 Ga 0.75 N(1.6nm) / GaN(1.8nm), the doping concentration is 3.0×10 16 cm -3 ...

Example Embodiment

[0034] Example 2

[0035] In order to illustrate the application value of the present invention, we take a GaN-based laser with an operating wavelength of 450 nm as an example to illustrate the characteristics of the device structure. Compared with Example 1, the material and thickness of each layer are changed to In except for the active area 0.3 Ga 0.7 N / In 0.02 Ga 0.98 N multiple quantum wells (multiple quantum wells are 3 periods, In 0.3 Ga 0.7 N well width is 3nm, In 0.02 Ga 0.98 N barrier width is 5nm, Si impurity concentration is 3.0×10 16 cm -3 ), the parameters, growth conditions, device size and fabrication process of other layers are exactly the same as those in Example 1, as shown in Table 1. The post-production process of the device is also the same as that of Embodiment 1.

[0036] The energy level of the active region of the quantum cascade radiation layer is calculated by self-consistently solving the Schrödinger equation and the Poisson equation. The...

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Abstract

The invention provides a GaN (gallium nitride)-based semiconductor laser and a manufacturing method thereof, belonging to the field of semiconductor lasers. The GaN-based semiconductor laser does not have an electronic barrier layer, thus reducing the working voltage of the laser and prolonging the service life of the laser. For the laser, a quantum cascade radiation layer is arranged between an n-type optical limited layer and an n-type waveguide layer of the laser and utilized to generate infrared radiation when the laser operates, thus realizing ionization of magnesium acceptor impurities in a p-type GaN waveguide layer and a AlGaN optical limited layer, improving carrier concentration in each p-type layer, increasing hole injection current, reducing leakage of electronics from an active area, avoiding introduction of a AlGaN electronic barrier layer and eliminating optical absorption loss caused by the magnesium-doped AlGaN electronic barrier layer, thereby reducing the threshold current of the laser, reducing the working voltage of the laser and prolonging the service life of the laser.

Description

technical field [0001] The invention belongs to the field of semiconductor devices, in particular to a gallium nitride-based semiconductor laser and a manufacturing method thereof. Background technique [0002] As a third-generation semiconductor, gallium nitride (GaN) and its series of materials (including aluminum nitride, aluminum gallium nitride, indium gallium nitride, and indium nitride) are characterized by their large band gap and wide spectral range (covering from ultraviolet to Infrared full band), high temperature resistance and corrosion resistance, has great application value in the field of optoelectronics and microelectronics. GaN-based lasers are very important GaN-based optoelectronic devices. Because the light waves emitted by them are in the blue-violet light band, GaN-based lasers are used in high-density optical information storage, projection display, laser printing, underwater communication, activation of biochemical reagents and It has important appl...

Claims

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Application Information

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IPC IPC(8): H01S5/343
Inventor 李德尧许海军廛宇飞陈博婷朱建军张书明杨辉
Owner BEIJING UNIV OF CHEM TECH
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