Trench type semiconductor power device

Abstract

The invention relates to a semiconductor device. The device comprises a semiconductor substrate, a semiconductor drift region on the semiconductor substrate, a high-K dielectric on the semiconductor substrate, an active region on the semiconductor drift region and a trench gate structure on the high-K dielectric, wherein the semiconductor drift region comprises a first conduction type semiconductor region and a second conduction type semiconductor region which form a super-junction structure; the high-K dielectric is adjacent to the second conduction type semiconductor region; the trench gate structure is adjacent to the active region; and the second conduction type semiconductor region is formed through ion implantation at a small inclination angle, so that the semiconductor device is narrow and has high concentration.

Description

technical field [0001] The invention relates to a semiconductor power device, in particular to a low power consumption semiconductor power device with a groove gate structure. Background technique [0002] Power MOSFET (metal oxide semiconductor Field-Effect Transistor) is a multi-subconduction device with high input impedance, easy driving, fast speed, high frequency, positive temperature coefficient of on-resistance, wide safe operating area, and parallel use, etc. advantage. These advantages make it widely used in industrial control, aerospace, communications, automobiles, computers and portable appliances, home appliances, office supplies and other fields, especially in the application of switching power supplies, which has achieved rapid development and greatly improved the efficiency of electronic systems . [0003] The high voltage resistance of the device requires a long drift region and a low doping concentration in the drift region. However, as the length of the...

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Problems solved by technology

But there are still disadvantages: (1) Since the device structure in this patent is obtained based on some conventional processes, the process is relatively difficult and the process cost is high, and the P column area and the N column area cannot be made very narrow (rather than the conduction It cannot be made very small); (2) Since the structure in this patent is based on a conventional process, if you want to use high-K dielectrics to improve performance, you generally need to make independent grooves, which will inevitably increase the complexity of the process

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