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51results about How to "Influence characteristics" patented technology

Thin film transistor, fabrication method thereof, display substrate and display device

The invention provides a thin film transistor, a fabrication method thereof, a display substrate and a display device, and belongs to the technical field of display. The method comprises the steps of forming a metal oxide semiconductor pattern, wherein the metal oxide semiconductor pattern comprises a first metal oxide semiconductor layer and a second oxide semiconductor layer, and the second metal oxide semiconductor layer is arranged on the first metal oxide semiconductor layer; depositing a source-drain metal layer on the metal oxide semiconductor pattern; and etching the source-drain metal layer and the second metal oxide semiconductor layer to form a source electrode, a drain electrode and an active layer of the thin film transistor, wherein the active layer is obtained after the second metal oxide semiconductor layer between the source electrode and the drain electrode is removed by a first etching liquid, and the etching rate of the first etching liquid on the second metal oxide semiconductor layer is larger than the etching rate of the first etching liquid on the first metal oxide semiconductor layer. By the method, the stability of the metal oxide thin film transistor can be improved, and the display quality of the display device is ensured.
Owner:BOE TECH GRP CO LTD

Electric quantity measurement method, measuring circuit and method of calibration coefficient, and terminal device

The invention, which relates to the field of the electronic technology, discloses an electric quantity measurement method, a measuring circuit and method of a calibration coefficient, and a terminal device. The measuring circuit for an electric quantity calibration coefficient comprises a fixed-value resistor and a resistor connector that are arranged on the circuit board. A first pin group of the battery connector is connected with a positive electrode of a battery electrically; and a second pin group is connected with a negative electrode of the battery electrically. When the battery is connected to the battery connector electrically, a first end of the fixed-value resistor is connected with the negative electrode of the battery electrically by the second pin group and a second end of the fixed-value resistor is grounded. The first end and the second end enable test points arranged at the circuit board to be led out respectively; and the test points are used for contact with test heads of a constant-current source or a test instrument. Compared with the prior art, the measuring circuit enables the current flowing through the fixed-value resistor to be calibrated and the capacity of the battery to be tested, so that the damage to the circuit board can be avoided and the current calibration precision as well as the accuracy of the electric quantity testing result can be guaranteed.
Owner:SHANGHAI YUDE TECH CO LTD

Trench type power transistor and manufacturing method thereof

The invention provides a trench type power transistor, which includes a semiconductor substrate, wherein the semiconductor substrate comprises at least one active part, the at least one active part has a gate trench structure, and the gate trench structure is provided with a surrounding wall which extends downwards from the top surface and defines a gate trench, a first isolation layer which is made of an insulating material and extends to cover the surface of the surrounding wall, an isolation unit which is made of an insulating material, is filled in the gate trench and covers the first isolation layer, a shielding electrode located at the bottom of the gate trench, and a gate electrode located above the shielding electrode. By means of the structural design of the isolation unit, the fourth isolation layer wraps the peripheral face, adjacent to the shielding electrode, of the gate electrode so as to isolate the gate electrode from the nitride material, so that the defect that due tothe fact that the gate electrode makes contact with nitride or is too close to the nitride, interaction is generated, and element characteristics are affected can be overcome. The invention also provides a method for manufacturing the trench type power transistor.
Owner:LEADPOWER SEMI CO LTD

Inductive coupling type direct-current fault current limiter and control method thereof

The invention discloses an inductive coupling type direct current fault current limiter and a control method thereof. The inductive coupling type direct current fault current limiter structurally comprises a first bridge arm, a second bridge arm, a third bridge arm, a fourth bridge arm and an H bridge circuit formed by the first bridge arm, the second bridge arm, the third bridge arm and the fourth bridge arm, wherein the first bridge arm and the second bridge arm are connected in series, the fourth bridge arm and the third bridge arm are connected in series, and a series branch formed by the first bridge arm and the second bridge arm is connected with a series branch formed by the third bridge arm and the fourth bridge arm in parallel. The control method for the inductive coupling type direct-current fault current limiter comprises the steps: initializing, and when a fault signal is detected, turning off an IGBT set, so that current consumption of an inductance loop is made to be zero; triggering the IGBT set again; and recovering a current limiter to prepare for the next fault. Compared with the prior art, the inductive coupling type direct current fault current limiter is used for a low-voltage flexible direct-current power distribution network, and has the advantages that 1) during normal operation, adverse effects on transient response characteristics and operation stability of a direct-current system are avoided, and 2) after direct current fault, the rapid rising of the fault current can be effectively limited, and sufficient action time is created for protection and fault isolation.
Owner:TIANJIN UNIV

Online agricultural non-point source pollution monitoring system

The invention discloses an online agricultural non-point source pollution monitoring system. The online agricultural non-point source pollution monitoring system comprises multiple monitoring stations, a communication network and a monitoring centre; the monitoring stations are arranged in different non-point source pollution points, and used for acquiring sewage in real time, performing water quality analysis, and transmitting water quality analysis data to the monitoring centre through the communication network; a sampling and pre-processing unit, a water quality analysis unit, an illumination unit and a monitoring unit are arranged in the monitoring station; the sampling and pre-processing unit comprises a sampling pump and a filter; the water quality analysis unit comprises a samplingtank and an analyzer arranged in the sampling tank; the analyzer is connected to a control cabinet; a control unit is arranged in the control cabinet; and the control unit is used for controlling theaction of the sampling pump, a water level indicator and the analyzer in the monitoring station and communication with the monitoring centre, and transmitting a water quality analysis result and an illumination condition in the monitoring station and the monitoring information of the monitoring unit to the monitoring centre. By means of the online agricultural non-point source pollution monitoringsystem disclosed by the invention, multi-point online monitoring of agricultural non-point source pollution is realized; the automation degree is high; and manpower and material resources are saved.
Owner:北京博瑞环境工程有限公司 +1

Yogurt having antioxidant functions and preparation method thereof

The invention belongs to the field of food, and specifically relates to yogurt having antioxidant functions and a preparation method thereof. The preparation method includes the following steps: 1) preparing reconstituted milk; 2) performing homogenization; 3) performing sterilization; 4) performing enzyme hydrolysis, and performing hydrolysis after adding trypsin into the reconstituted milk; 5) performing enzyme inactivation; 6) inoculating a microbial agent, mixing the lyophilized powder of streptococcus thermophilus, lactobacillus bulgaricus and lactobacillus plantarum in proportion to inoculate into the reconstituted milk; 7) performing split charging and fermentation; and 8) performing post-ripening. The method uses the lactobacillus plantarum with high oxidation resistance and lacticacid bacteria with strong protein hydrolysis ability to prepare the yogurt through co-fermentation; and through proper enzymolysis of raw milk by protease, the degree of proteolysis of the raw milk can be increased, so that the problems of poor growth of the lactobacillus plantarum in the milk can be solved, and the antioxidant activity of products can be enhanced. The selected fermentation strains have good viscosity producing characteristics, and can guarantee the curd effects and sensory flavor characteristics of the products by collaborating with whey protein powder fortified raw milk.
Owner:SICHUAN DONGPO CHINESE PAOCAI IND TECH RES INST

Top gate thin film transistor manufacturing method and top gate thin film transistor

The invention provides a top gate thin film transistor manufacturing method and a top gate thin film transistor. The manufacturing method comprises the steps of providing a glass substrate; forming a oxide semiconductor layer on the glass substrate, wherein the oxide semiconductor layer comprises a source region, a drain region and a channel region; forming a gate insulation layer at the position corresponding to the channel region on the oxide semiconductor layer; forming a grid electrode on the gate insulation layer; depositing an interlayer dielectric at the surface of the grid electrode, the surface of the oxide semiconductor layer and the surface of the glass substrate by adopting a method of chemical vapor deposition, and performing conductor processing on the surface of the source region and the surface of the drain region; and forming a source electrode and a drain electrode, wherein the source electrode and the drain electrode are electrically connected with the source region and the drain region of the oxide semiconductor layer respectively. The manufacturing method has the advantages that conductor processing can be performed when the interlayer dielectric is deposited, and a high migration rate and on-state current can be ensured.
Owner:TCL CHINA STAR OPTOELECTRONICS TECH CO LTD

Optically transparent mark for marking gemstones

The invention relates to marks used for marking gemstones, inter alia rough or cut diamonds, containing various types of information such as, for example, an identification code, and more particularly relates to marks which are invisible to the naked eye and under magnifying glasses and various types of microscopes, and which are placed inside the body of a rough or cut diamond without producing an effect that is detrimental to the quality of said rough or cut diamond. The invention addresses the technical problem of extending the use of such a mark to rough diamonds containing different amounts and types of natural impurities, inter alia nitrogen, and achieves the technical result of solving said problem while at the same time simplifying the marking process and reducing the potential effect of said process on the properties of the stone. This technical result is achieved by the use of an optically transparent mark placed inside the body of a rough or cut diamond, said mark containing predetermined encoded information and consisting of a given combination of micron- or submicron-sized optically transparent elements that are regions containing an elevated concentration of atomic defects in the crystal lattice of a rough or cut diamond, said atomic defects in the crystal lattice of a rough or cut diamond being vacancies and interstitials, wherein information is encoded in at least two regions of elevated concentration of said atomic defects.
Owner:阿尔罗萨私人有限公司

Voltage balance method between bridge arms of modular multilevel converter based on peak prediction

The invention discloses a peak-prediction-based method for balancing voltage between modularization multi-level current converter bridge arms, and belongs to the technical field of power electronic device control. The method comprises the steps that the phase position of the equivalent voltage connected to a reactance valve side and the phase position of the bridge arm voltage are calculated when the equivalent voltage and the bridge arm voltage have the maximum value, the maximum value of the voltage fluctuation of each bridge arm is predicted, and the effective value of the interphase balance current and the effective values of the balance current of the upper and lower bridge arms of each phase are respectively calculated according to the predicted maximum value; according to the fundamental wave phase position of the equivalent voltage on the valve side and the proposed formula, coordinate transformation is conducted on the interphase balance current and the balance current of the upper and lower bridge arms in each phase, and a balance current instantaneous value instruction with the format being circular current inside a current converter is obtained. According to the peak-prediction-based method for balancing the voltage between the modularization multi-level current converter bridge arms, the response speed of a bridge arm voltage balance controller can be increased, the fluctuation peak can be directly controlled, capacitance overvoltage can be better avoided, and no influences on external characteristics of the current converter are produced.
Owner:ELECTRIC POWER RESEARCH INSTITUTE, CHINA SOUTHERN POWER GRID CO LTD +1
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