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Thin film transistor, fabrication method thereof, display substrate and display device

A technology of a thin film transistor and a manufacturing method, which are applied in the fields of thin film transistors and their manufacturing methods, display devices, and display substrates, can solve the problems of metal oxide thin film transistor stability effects, damage to the back channel, etc., and achieve shortening of etching time, The effect of reducing damage and improving stability

Inactive Publication Date: 2017-05-31
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to prevent the conductive ions of the source-drain metal layer from remaining in the channel region, the etching time of the source-drain metal layer will be increased when the source-drain metal layer is etched, but after the etching time is increased, the The etchant will damage the back channel of the active layer, which will affect the stability of the metal oxide thin film transistor

Method used

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  • Thin film transistor, fabrication method thereof, display substrate and display device
  • Thin film transistor, fabrication method thereof, display substrate and display device
  • Thin film transistor, fabrication method thereof, display substrate and display device

Examples

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Embodiment 1

[0052] This embodiment provides a method for manufacturing a thin film transistor, including:

[0053] Forming a metal oxide semiconductor pattern, the metal oxide semiconductor pattern includes a first metal oxide semiconductor layer and a second metal oxide semiconductor layer stacked, the second metal oxide semiconductor layer is located on the first metal oxide semiconductor layer Above the material semiconductor layer;

[0054] Depositing a source and drain metal layer on the metal oxide semiconductor pattern, etching the source and drain metal layer and the second metal oxide semiconductor layer to form a source electrode, a drain electrode and an active layer of a thin film transistor, Wherein, the active layer is obtained after removing the second metal oxide semiconductor layer between the source electrode and the drain electrode with a first etchant, and the first etchant does not affect the second metal oxide semiconductor layer. The etching rate of the second meta...

Embodiment 2

[0093]Below in conjunction with accompanying drawing, the manufacturing method of thin film transistor of the present invention is further introduced:

[0094] The manufacturing method of the thin film transistor of the present embodiment comprises the following steps:

[0095] Step 1: If figure 1 As shown, a gate electrode 2, a gate insulating layer 3, a first metal oxide semiconductor layer 4 and a second metal oxide semiconductor layer 5 are formed on a base substrate 1;

[0096] Wherein, the base substrate 1 may be a glass substrate or a quartz substrate. Specifically, sputtering or thermal evaporation can be used to deposit a thickness of about The gate metal layer, the gate metal layer can be Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W and other metals and alloys of these metals, the gate metal layer can be single-layer structure or multi-layer Structure, multi-layer structure such as Cu\Mo, Ti\Cu\Ti, Mo\Al\Mo, etc. A layer of photoresist is coated on the gate metal l...

Embodiment 3

[0108] Below in conjunction with accompanying drawing, the manufacturing method of thin film transistor of the present invention is further introduced:

[0109] The manufacturing method of the thin film transistor of the present embodiment comprises the following steps:

[0110] Step 1: If figure 1 As shown, a gate electrode 2, a gate insulating layer 3, a first metal oxide semiconductor layer 4 and a second metal oxide semiconductor layer 5 are formed on a base substrate 1;

[0111] Wherein, the base substrate 1 may be a glass substrate or a quartz substrate. Specifically, sputtering or thermal evaporation can be used to deposit a thickness of about The gate metal layer, the gate metal layer can be Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W and other metals and alloys of these metals, the gate metal layer can be single-layer structure or multi-layer Structure, multi-layer structure such as Cu\Mo, Ti\Cu\Ti, Mo\Al\Mo, etc. A layer of photoresist is coated on the gate metal ...

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Abstract

The invention provides a thin film transistor, a fabrication method thereof, a display substrate and a display device, and belongs to the technical field of display. The method comprises the steps of forming a metal oxide semiconductor pattern, wherein the metal oxide semiconductor pattern comprises a first metal oxide semiconductor layer and a second oxide semiconductor layer, and the second metal oxide semiconductor layer is arranged on the first metal oxide semiconductor layer; depositing a source-drain metal layer on the metal oxide semiconductor pattern; and etching the source-drain metal layer and the second metal oxide semiconductor layer to form a source electrode, a drain electrode and an active layer of the thin film transistor, wherein the active layer is obtained after the second metal oxide semiconductor layer between the source electrode and the drain electrode is removed by a first etching liquid, and the etching rate of the first etching liquid on the second metal oxide semiconductor layer is larger than the etching rate of the first etching liquid on the first metal oxide semiconductor layer. By the method, the stability of the metal oxide thin film transistor can be improved, and the display quality of the display device is ensured.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, a display substrate, and a display device. Background technique [0002] In the field of flat panel display technology, Thin Film Transistor Liquid Crystal Display (TFT-LCD) has the advantages of small size, low power consumption, and low manufacturing cost, and gradually occupies a dominant position in today's flat panel display market. [0003] With the development of TFT-LCD technology, metal oxide thin film transistor (Oxide Thin Film Transistor, referred to as OTFT) technology is becoming more and more mature. It has the advantages of high carrier mobility, low power consumption, and can be applied to low-frequency drive. And it can also be applied to organic light-emitting diode displays, which are called next-generation display technologies. [0004] However, in the prior art, when making a metal oxide thin ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/06H01L29/22H01L29/24H01L21/34
CPCH01L29/0684H01L29/22H01L29/24H01L29/66969H01L29/7869H01L21/465H01L27/1225H01L21/0273H01L29/41733H01L29/42384H01L29/66742
Inventor 杨维宁策胡合合王珂
Owner BOE TECH GRP CO LTD
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