Thin film transistor, fabrication method thereof, display substrate and display device

A technology of a thin film transistor and a manufacturing method, which are applied in the fields of thin film transistors and their manufacturing methods, display devices, and display substrates, can solve the problems of metal oxide thin film transistor stability effects, damage to the back channel, etc., and achieve shortening of etching time, The effect of reducing damage and improving stability
CN106784014AInactive Publication Date: 2017-05-31BOE TECH GRP CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
BOE TECH GRP CO LTD
Publication Date
2017-05-31
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides a thin film transistor, a fabrication method thereof, a display substrate and a display device, and belongs to the technical field of display. The method comprises the steps of forming a metal oxide semiconductor pattern, wherein the metal oxide semiconductor pattern comprises a first metal oxide semiconductor layer and a second oxide semiconductor layer, and the second metal oxide semiconductor layer is arranged on the first metal oxide semiconductor layer; depositing a source-drain metal layer on the metal oxide semiconductor pattern; and etching the source-drain metal layer and the second metal oxide semiconductor layer to form a source electrode, a drain electrode and an active layer of the thin film transistor, wherein the active layer is obtained after the second metal oxide semiconductor layer between the source electrode and the drain electrode is removed by a first etching liquid, and the etching rate of the first etching liquid on the second metal oxide semiconductor layer is larger than the etching rate of the first etching liquid on the first metal oxide semiconductor layer. By the method, the stability of the metal oxide thin film transistor can be improved, and the display quality of the display device is ensured.
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Description

technical field

[0001] The present invention relates to the field of display technology, in particular to a thin film transistor, a manufacturing method thereof, a display substrate, and a display device. Background technique

[0002] In the field of flat panel display technology, Thin Film Transistor Liquid Crystal Display (TFT-LCD) has the advantages of small size, low power consumption, and low manufacturing cost, and gradually occupies a dominant position in today's flat panel display market.

[0003] With the development of TFT-LCD technology, metal oxide thin film transistor (Oxide Thin Film Transistor, referred to as OTFT) technology is becoming more and more mature. It has the advantages of high carrier mobility, low power consumption, and can be applied to low-frequency drive. And it can also be applied to organic light-emitting diode displays, which are called next-generation display technologies.

[0004] However, in the prior art, when making a metal oxide thin ...

Claims

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