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Array substrate and display device

A technology for array substrates and display devices, applied in semiconductor devices, electric solid state devices, electrical components, etc., can solve problems such as affecting the deposition effect of metal thin films, poor adhesion, and affecting semiconductor characteristics.

Active Publication Date: 2014-01-22
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The metal film is directly deposited on the surface of the glass. Due to the poor adhesion when the metal Cu and the glass are in direct contact, the deposition effect of the metal film is affected.
In addition, metal Cu may also diffuse and pass through the insulating layer, which also affects the characteristics of the semiconductor.

Method used

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Embodiment Construction

[0025] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.

[0026] At present, when metal Cu is used as the gate line in the display manufacturing industry, titanium (Ti), molybdenum (Mo), molybdenum-titanium alloy (MoTi) and other molybdenum alloys are usually used as the buffer layer of the array substrate. However, the buffer layer in the prior art has only one layer. In addition, because the materials of the metal film and the buffer layer are different, the etching speed is different, and the total time used for etching is mostly spent on corroding the buffer layer. The etch rate is slow, while the etch rate of the metal film is fast, which makes it difficult to control the slope angle after etching.

[0027] An embodiment of...

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Abstract

The invention discloses an array substrate and a display device. The array substrate comprises a glass substrate, wherein a first buffer layer is arranged on the glass substrate; a metal thin film is arranged above the first buffer layer; a second buffer layer is further arranged between the first buffer layer and the metal thin film. Through the second buffer layer arranged between the metal thin film and the first buffer layer, under the condition of heating, other elements except copper in the copper alloy can be separated out of the metal surface, and after annealing, the buffer layer can be formed to stop the copper metal to diffuse to a semiconductor layer, so that the diffusion of the metal elements cannot influence the property of a semiconductor, and in the meantime, substances in the semiconductor material can be prevented from diffusing to the metal thin film. Therefore, the adhesion ability of the metal thin film and the glass substrate can be enhanced, and the combination capacity of the metal thin film and the first buffer layer can be improved.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate and a display device. Background technique [0002] In order to meet the development trend of large-size liquid crystal displays, copper (Cu) is generally used as the gate line of the array substrate during the production process of TFT-LCD (Thin Film Transistor-Liquid Crystal Display) panels. [0003] During the processing process of the array substrate, a metal thin film (Cu thin film) is deposited on the surface of the substrate substrate (usually glass), and then a photoresist film is formed by coating photoresist, and ultraviolet light is irradiated through the mask plate. Engraving, exposure and development to obtain the desired shape of the pattern, and then etch the surface of the substrate to form grid lines. Then form an insulating layer and a semiconductor film, repeat film deposition and etching, and form films of different materials and s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L29/786H01L29/49
CPCH01L29/4908H01L27/1218H01L27/124H01L29/45H01L29/7869
Inventor 姚琪张锋曹占锋
Owner BOE TECH GRP CO LTD
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