Manufacturing method of memory

Abstract

The invention a manufacturing method of a memory, which comprises the following steps: providing a substrate, wherein the substrate comprises a memory cell zone and a perimeter zone, wherein a plurality of first grids are formed in the memory cell zone, and a plurality of first openings are arranged among the first grids; forming a nitride layer on the substrate in the memory cell zone, wherein the nitride layer is covered on the first grids and the first openings; forming an oxide layer on the substrate in the perimeter zone; carrying out a nitridizing technique to nitridize the oxide layer into a nitridized oxide layer; and forming a conductor layer on the substrate, wherein the conductor layer comprises a coverage layer positioned on the substrate in the memory cell zone and a plurality of plate grids positioned on the substrate in the perimeter zone, and the coverage layer is covered on the nitride layer and fully filled in the first openings.

Description

Technical field [0001] The present invention relates to memory technology, and more particularly to a method of manufacturing a memory. Background technique [0002] Generally speaking, as the size of flash memory gradually shrinks, in order to overcome the increasingly smaller line width and prevent misalignment, self-aligned contact (SAC) is used in the memory cell area. ) Process and self-aligned floating gate (SAF) process. [0003] However, taking the flash memory as an example, when the self-aligned contact window process or the self-aligned floating gate process is performed on the memory cell area, it must be considered that the two processes themselves have complex processes on the peripheral device area. The thermal process and the thermal process used may affect the device characteristics in the peripheral area, such as the deterioration of the gate characteristics, or the boron penetraion effect in the gate oxide layer, so the thermal process temperature and other para...

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Problems solved by technology

[0003] However, taking flash memory as an example, when performing a self-aligned contact window process or a self-aligned floating gate process on the memory cell region, it must be considered that these two processes themselves have complicated processes for the surrounding device regions. The thermal process used may affect the device characteristics of the peripheral area, such as the deterioration of the gate characteristics, or the boron penetration (boron penetration) effect in the gate oxide layer, so the temperature of the thermal process and other parameters should be adjusted.

That is to say, in order to take into account the element characteristics of the peripheral region, it may be necessary to sacrifice the better process conditions of the elements in the memory cell region, so it is difficult to further improve the element characteristics of the memory

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