Preparation method of cesium-lead halogen perovskite nanocrystalline film with high luminous efficiency

Abstract

The invention relates to a preparation method of a cesium-lead halogen perovskite nanocrystalline film with high luminous efficiency. The method comprises the steps of (1) uniformly mixing DMF, oleicacid and oleylamine to obtain a mixed solution; (2) sequentially adding CsX and PbY2 into the mixed solution, uniformly stirring, standing, and taking a supernatant to obtain a precursor solution; (3)uniformly mixing 3-aminopropyltriethoxysilane with DMF to obtain an APTES solution; (4) uniformly mixing the precursor solution and the APTES solution, and adding toluene to obtain a cesium-lead halogen perovskite quantum dot solution; and (5) sequentially cleaning and drying the thin film substrate, respectively putting the thin film substrate into the cesium-lead halogen perovskite quantum dotsolution, centrifuging in a centrifugal machine, pouring out the solution, taking out the substrate, and drying to obtain the cesium-lead halogen perovskite nanocrystalline film with high luminous efficiency. Compared with the prior art, the method has the advantages of simple manufacturing process, good stability, easiness in large-area preparation and the like.

Description

technical field [0001] The invention relates to the field of luminescent materials, in particular to a method for preparing a cesium lead halide perovskite nanocrystal film with high luminous efficiency. Background technique [0002] Organic-inorganic APbX 3 (A=Cs + or CH 3 NH 3 + ; X = Cl, Br, I) Halide perovskite quantum dot materials have attracted much attention due to their excellent optoelectronic properties, including high photoluminescence quantum yield (PL QY), large carrier diffusion length, and narrow emission peaks The half-maximum width (FWHM) and tunable fluorescence emission wavelength have attractive application potentials in light-emitting diodes (LEDs), solar cells, photodetectors, and lasers. [0003] However, when perovskite quantum dots are exposed to the external environment, various factors such as humidity, heat, and light can cause surface damage, phase transition, and aggregation of quantum dots, resulting in photoluminescence quenching. The i...

AI Technical Summary

Problems solved by technology

Film-forming methods mainly include spin coating, spray coating and high-temperature evaporation, etc., but traditional film-forming methods such as spin coating usually rely on a large amount of high-purity quantum dot solution, and perovskite quantum dots currently do not have such a solution, so it is difficult to achieve Industrialized production; Another kind of spin-coating film-forming method is to make the PbX of spin-coating 2 The method of in-situ reaction of film and CsX (X=Cl, Br, I) solution to form a film has high operational requirements and is difficult to popularize; although the film prepared by spraying method can form a large area of ​​film, but the film forming speed is fast, making the film rough The temperature is not easy to control, and it needs to be heated to drive off the solvent, which makes the size of the quantum dots difficult to control, resulting in low luminous efficiency of the film; the evaporation method needs to be prepared in a high vacuum environment and high evaporation temperature, which is not conducive to the large area of ​​the perovskite film. mass production

Images