Method for preparing high-quality molybdenum disulfide thin films with layer numbers being uniform

A molybdenum disulfide, high-quality technology, applied in the field of nanomaterials, can solve the problem of uneven size of molybdenum disulfide, achieve the effect of precise control of process parameters, conducive to repeated tests, and simple addition methods

Inactive Publication Date: 2018-07-17
NORTHWEST UNIV(CN)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, some scientific researchers have been engaged in the preparation of molybdenum disulfide thin films and have achieved certain results. For example, the Chinese patent CN201710519326.9 uses molybdenum trioxide to prepare single-layer molybdenum disulfide thin films. Molybdenum sulfide film, the size of molybdenum disulfide prepared by this method is not uniform

Method used

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  • Method for preparing high-quality molybdenum disulfide thin films with layer numbers being uniform
  • Method for preparing high-quality molybdenum disulfide thin films with layer numbers being uniform
  • Method for preparing high-quality molybdenum disulfide thin films with layer numbers being uniform

Examples

Experimental program
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Effect test

Embodiment 1

[0037] This example provides a method for using potassium chloride to assist in the preparation of a large-area and high-quality molybdenum disulfide film with good uniformity. The experimental schematic diagram is as follows figure 1 As shown in (a), the experimental process includes the following steps:

[0038] Step 1): First use the acetone / carbon tetrachloride mixed solution and absolute ethanol to perform ultrasonic cleaning on the silicon dioxide / silicon substrate in this order, each process lasts 30 minutes, and the acetone / carbon tetrachloride mixed solution The function is to remove the grease on the surface of the copper sheet. Ethanol is an effective dispersant, which can clean and disperse the soluble impurities and residual acetone on the surface of the silicon dioxide / silicon substrate, and then use deionized water to obtain a clean SiO2 / Silicon Substrate.

[0039] Step 2): Prepare 20ml of "piranha" solution, in order to completely remove organic impurities on ...

Embodiment 2

[0045] This comparative example provides a kind of auxiliary preparation method of molybdenum disulfide thin film that reduces potassium chloride consumption, comprises the following steps,

[0046] Step 1): The method for cleaning the substrate in Embodiment 1 is the same.

[0047] Step 2), is identical with embodiment one.

[0048] Step 3): Weigh 120mg of pure sulfur powder, 5mg of potassium chloride and 0.5mg of molybdenum trioxide respectively, place the pure sulfur powder in the upstream position of the quartz tube of the tubular atmosphere furnace, place the molybdenum trioxide powder in the cleaning Put the clean silicon dioxide / silicon substrate on the heating center of the tubular atmosphere furnace, put potassium chloride between the silicon dioxide / silicon substrate and pure sulfur powder, potassium chloride and silicon dioxide / silicon lining The distance between the bottoms is 6 cm.

[0049] Step 4): same as embodiment two.

[0050] Figure 4 In order to prepar...

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Abstract

The invention discloses a method for preparing high-quality molybdenum disulfide thin films with the layer numbers being uniform. Potassium chloride is used for assisting a chemical vapor deposition method in preparing of large-area single-layer molybdenum disulfide thin films on a silicon substrate covered by a silicon dioxide layer with the thickness being 300nm, and the single-layer molybdenumdisulfide thin films of different dimensions can be obtained by controlling the amount of different sorts of the potassium chloride. The method has the advantages that the high-quality molybdenum disulfide thin films with good homogeneity can be effectively prepared through the potassium chloride, and the experimental method is simple in technology, low in cost and suitable for mass production; the prepared molybdenum disulfide thin films can be used as two-dimensional transparent semiconductor films to be applied to the fields of photoelectric devices, flexible and transparent devices, optical detectors and the like; and the method is of high application value and significance to electronic material preparation and production.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and in particular relates to a method for preparing a molybdenum disulfide thin film with uniform layers and high quality. Background technique [0002] Molybdenum disulfide is a two-dimensional nanomaterial composed of one layer of molybdenum atoms and two layers of sulfur atoms. It has a two-dimensional layered structure similar to graphene, and each layer is stacked to form a block. Each 2D crystal layer is about 0.65 nm thick, and the layers are held together by weak van der Waals forces. The monolayer molybdenum disulfide is composed of one layer of hexagonal arrangement of molybdenum atoms and two layers of hexagonal arrangement of sulfur atoms. The molybdenum atom layer is sandwiched between the two layers of sulfur atoms. Arranged in form, forming a hexagonal crystal structure. Molybdenum disulfide has very high mechanical strength and has a higher Young's modulus than steel...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/02
CPCC23C16/02C23C16/305
Inventor 张志勇李展许曼章赵武闫军锋王英楠贠江妮翟春雪王雪文马驰吴民财邓鹏张艺凡
Owner NORTHWEST UNIV(CN)
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