Nitride near infrared fluorescent material and light emitting device containing same

A technology of fluorescent materials and light-emitting devices, applied in the direction of light-emitting materials, chemical instruments and methods, electrical components, etc., can solve the problems of poor stability and low luminous efficiency, and achieve good stability, high luminous efficiency, and good chemical stability Effect

Active Publication Date: 2019-02-22
XUYU OPTOELECTRONICSSHENZHEN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a nitride near-infrared fluorescent material and a light-emitting device containing a nitride near-infrared fluorescent material,

Method used

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  • Nitride near infrared fluorescent material and light emitting device containing same
  • Nitride near infrared fluorescent material and light emitting device containing same
  • Nitride near infrared fluorescent material and light emitting device containing same

Examples

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Example Embodiment

[0044] Correspondingly, the embodiment of the present invention provides a method for preparing a nitride near-infrared fluorescent material. Since the nitride near-infrared fluorescent material provided by the embodiment of the present invention has many kinds of elements, it includes at least 8 kinds of elements. If all raw materials are added at one time for calcination, it is difficult to dope A, B, M, R, Er, Eu, etc. at the same time to form A x M y B z Si 5 N 8 : (AEr, bEu, cR) structure, therefore, the embodiment of the present invention prepares A by a two-step method x M y B z Si 5 N 8 : (AEr, bEu, cR) to ensure the stable crystal structure and high luminous efficiency. Specifically, A is prepared by a two-step method x M y B z Si 5 N 8 : (AEr, bEu, cR) includes the following steps:

[0045] S01. Provide M 2 N 3 , Si 3 N 4 , The nitride of B and the nitride of Eu are mixed to obtain the first mixture material, wherein the M 2 N 3 With the Si 3 N 4 The molar ratio of is 1...

Example Embodiment

[0066] Example 1

[0067] A nitride near-infrared fluorescent material, chemical formula is La 0.05 Er 0.01 Pr 0.03 Sr 1.77 Eu 0.08 Li 0.06 Si 5 N 8 . The preparation method of the nitride near-infrared fluorescent material includes the following steps:

[0068] According to the stoichiometric ratio, first weigh a certain amount of metal Sr nitride and Si 3 N 4 , After the metal Li nitride and the metal europium nitride are mixed uniformly, the temperature is 1300℃ N 2 / H 2 The calcined product is obtained by sintering in a mixed atmosphere (95% / 5% by volume) for 4 hours. The calcined product is crushed and post-treated as a precursor, and the precursor is mixed with metal La nitride and metal Er Fluoride, metal Pr fluoride and Si 3 N 4 Mix according to a certain proportion, at a temperature of 1600℃ N 2 / H 2 The sintered intermediate is obtained by sintering under a mixed atmosphere (volume ratio of 95% / 5%) for 8 hours, and the sintered intermediate is crushed, washed, and classif...

Example

[0069] Examples 2-25

[0070] A nitride near-infrared fluorescent material, chemical formula A x M y BzSi 5 N 8 : (aEr, bEu, cR), A is selected from one or two of La, Lu, and Y, M is at least one of Ca, Sr, and Ba, and B is one of Li, Na, and K. , R is one of Yb and Pr elements, and x, y, z, a, b, and c are the amounts of substances composed of each element. Specifically, the chemical formulas of the nitride near-infrared fluorescent materials described in Examples 2-25 are shown in Examples 2-25 of Table 1, respectively. The preparation method of the nitride near-infrared fluorescent material is the same as in Example 1.

[0071] The XRD pattern of the nitride near-infrared fluorescent material provided in Example 25 is as follows figure 1 As shown, the diffraction peak position of the material and Sr 2 Si 5 N 8 The same, indicating that the crystal structure of the material is still Sr after introducing elements such as A and B 2 Si 5 N 8 Structure; The morphology of the pre-fir...

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Abstract

The invention provides a nitride near infrared fluorescent material. The chemical formula of the material is AxMyBzSi5N8: (aEr, bEr, cR), wherein A is selected from one or two of La, Lu and Y; M is selected from at least one of Ca, Sr and Ba; B is selected from one of Li, Na and K; and T is selected from one of Yb and Pr; in the AxMyBzSi5N8: (aEr, bEr, cR), the value ranges of x, y and z meet thefollowing conditions: x is greater than or equal to 0.1 but less than or equal to 0.2, y is greater than or equal to 1.6 but less than or equal to 1.915, and z is greater than or equal to 0.1 but lessthan or equal to 0.2; and the value ranges of a, b and c meet the following conditions: a is greater than or equal to 0.1 but less than or equal to 0.1, b is greater than or equal to 0.05 but less than or equal to 0.1 and c is greater than or equal to 0.005 but less than or equal to 0.03.

Description

technical field [0001] The invention belongs to the technical field of inorganic light-emitting materials, and in particular relates to a nitride near-infrared fluorescent material and a preparation method thereof, and a light-emitting device containing a nitride near-infrared fluorescent material. Background technique [0002] Near-infrared light refers to light with a wavelength ranging from 760 to 1500nm. This band of light has great application prospects in the fields of face recognition, iris recognition, security monitoring, laser radar, and optical fiber communication. Among them, near-infrared LEDs have become a research hotspot at home and abroad because of their advantages such as good directivity, low power consumption, and small size. At present, near-infrared LEDs are mainly realized by near-infrared semiconductor chips. This method is very costly and the emission wavelength is not easy to adjust, which restricts the application and promotion of infrared LEDs to...

Claims

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Application Information

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IPC IPC(8): C09K11/79H01L33/50
CPCC09K11/0883C09K11/7792H01L33/502
Inventor 蔡金兰林金填冉崇高邱镇民陈磊李超郭醒
Owner XUYU OPTOELECTRONICSSHENZHEN CO LTD
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