Preparation method of SiC nanowire toughened chemical gas codeposited HfC-SiC compound phase coating
A technology of nanowire toughening and chemical vapor phase, which is applied in the field of preparation of nanowire toughened multiphase coatings, can solve the problems of limited coating resistance to oxidation, long diffusion free path, and decreased mechanical properties, and achieve excellent anti-burning corrosion performance, short reaction cycle, and low cost
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[0027] Preparation method steps of SiC nanowire toughened chemical vapor co-deposition HfC-SiC multiphase coating:
[0028] (1) Before coating preparation, the surface of the C / C composite material sample is polished, cleaned, and dried in an oven for later use. 2 , Si, C powders with a particle size of 300 meshes are mixed uniformly in a ratio of 6:1:2 and dried for later use;
[0029] (2) Use a bunch of carbon fiber ropes to suspend the C / C composite material in step 1 in a graphite crucible with a prepared powder at the bottom, and place the crucible in the constant temperature zone of the argon protective atmosphere electric furnace at 5°C It is energized and heated to 1600℃ at a rate of / min, kept at a constant temperature for 2h, and then cooled with the furnace.
[0030] (3) Use a bunch of carbon fibers to suspend the C / C sample with SiC nanowires on the surface obtained in step 2 in an isothermal chemical vapor deposition (CVD) furnace, and add HfCl 4 The powder is placed in ...
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[0037] Example 1:
[0038] The selected density is 1.70g / cm 3 Use 320 mesh SiC water sandpaper to smooth the C / C sample and place it at 80℃ for 4h for use; set the particle size to minus 300 mesh SiO 2 , Si, C are put into planetary ball mill for 3 hours at a ratio of about 6:1:2, and dried for later use. Choose HfCl 4 , SiCl 3 CH 3 , CH 4 As a precursor, H 2 As a reducing gas, Ar is used as a protective gas.
[0039] Use carbon fiber to hang the prepared C / C matrix on the inside with prepared SiO 2 , Si, C mixed powder graphite crucible, heat up to 1500 ℃, hold for 2 hours, obtain a C / C matrix with SiC nanowires on the surface, and then hang it in the isothermal zone of a chemical vapor deposition furnace (isothermal vertical vacuum furnace) . Under the protection of the Ar gas flow rate of 600ml / min, the temperature is increased at 7°C / min, and the furnace pressure is maintained at about 30kpa. After the temperature is raised to 1300°C, the powder feeding knob is adjusted to red...
Example Embodiment
[0040] Example 2:
[0041] The selected density is 1.70g / cm 3 Use 320 mesh SiC water sandpaper to smooth the C / C sample and place it at 80℃ for 4h for use; set the particle size to minus 300 mesh SiO 2 , Si, C are put into planetary ball mill for 3 hours at a ratio of about 6:1:2, and dried for later use. Choose HfCl 4 , SiCl 3 CH 3 , CH 4 As a precursor, H 2 As a reducing gas, Ar is used as a protective gas.
[0042] Use carbon fiber to hang the prepared C / C matrix on the inside with prepared SiO 2 , Si, C mixed powder graphite crucible, heat up to 1600 ℃, hold for 2 hours, obtain a C / C matrix with SiC nanowires on the surface, and then hang it in the isothermal zone of a chemical vapor deposition furnace (isothermal vertical vacuum furnace) . Under the protection of Ar gas flow rate of 600ml / min, the temperature is increased at 7°C / min, and the furnace pressure is maintained at about 30kpa. After the temperature is raised to 1400°C, adjust the powder feeding knob to reduce the H...
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